IL78921A - Dual ion beam deposition of a hydrogenated amorphous silicon film - Google Patents

Dual ion beam deposition of a hydrogenated amorphous silicon film

Info

Publication number
IL78921A
IL78921A IL78921A IL7892186A IL78921A IL 78921 A IL78921 A IL 78921A IL 78921 A IL78921 A IL 78921A IL 7892186 A IL7892186 A IL 7892186A IL 78921 A IL78921 A IL 78921A
Authority
IL
Israel
Prior art keywords
amorphous silicon
ion beam
silicon film
hydrogenated amorphous
beam deposition
Prior art date
Application number
IL78921A
Other languages
English (en)
Other versions
IL78921A0 (en
Original Assignee
Standard Oil Co Ohio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Oil Co Ohio filed Critical Standard Oil Co Ohio
Publication of IL78921A0 publication Critical patent/IL78921A0/xx
Publication of IL78921A publication Critical patent/IL78921A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/225—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/229—Non-specific enumeration
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/23—Mixtures
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/281—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
IL78921A 1985-06-28 1986-05-26 Dual ion beam deposition of a hydrogenated amorphous silicon film IL78921A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/749,833 US4673475A (en) 1985-06-28 1985-06-28 Dual ion beam deposition of dense films

Publications (2)

Publication Number Publication Date
IL78921A0 IL78921A0 (en) 1986-09-30
IL78921A true IL78921A (en) 1989-12-15

Family

ID=25015402

Family Applications (1)

Application Number Title Priority Date Filing Date
IL78921A IL78921A (en) 1985-06-28 1986-05-26 Dual ion beam deposition of a hydrogenated amorphous silicon film

Country Status (4)

Country Link
US (1) US4673475A (ja)
EP (1) EP0207646A1 (ja)
JP (1) JPS624313A (ja)
IL (1) IL78921A (ja)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
US4776925A (en) * 1987-04-30 1988-10-11 The Trustees Of Columbia University In The City Of New York Method of forming dielectric thin films on silicon by low energy ion beam bombardment
JP2713481B2 (ja) * 1989-12-04 1998-02-16 株式会社日立製作所 イオンビームスパッタによる多元系薄膜形成方法および多元系薄膜形成装置
US5246885A (en) * 1989-12-13 1993-09-21 International Business Machines Corporation Deposition method for high aspect ratio features using photoablation
JPH03202461A (ja) * 1989-12-29 1991-09-04 Nissin Electric Co Ltd 高絶縁酸化ケイ素薄膜の形成方法
CA2073802C (en) * 1991-08-16 2003-04-01 John Shimmick Method and apparatus for combined cylindrical and spherical eye corrections
US5418182A (en) * 1993-03-26 1995-05-23 Honeywell Inc. Method of fabricating diode lasers using ion beam deposition
US5601654A (en) * 1996-05-31 1997-02-11 The Regents Of The University Of California, Office Of Technology Transfer Flow-through ion beam source
GB2321063A (en) * 1997-01-08 1998-07-15 Oxford Plasma Technology Ltd Reactive particle beam sputtering
US6461982B2 (en) * 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6728429B1 (en) 2000-02-16 2004-04-27 Biotell, Inc. Optical detection
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
US20050118533A1 (en) * 2002-03-01 2005-06-02 Mirkarimi Paul B. Planarization of substrate pits and scratches
CN100355089C (zh) * 2003-07-04 2007-12-12 云南大学 改性红外探测材料－非晶SiGe薄膜的制备方法
EP1713736B1 (en) 2003-12-22 2016-04-27 Cardinal CG Company Graded photocatalytic coatings and methods of making such coatings
JP2008505842A (ja) 2004-07-12 2008-02-28 日本板硝子株式会社 低保守コーティング
KR100612868B1 (ko) * 2004-11-08 2006-08-14 삼성전자주식회사 실리콘 필름 제조방법
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
WO2007124291A2 (en) * 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
JP4162094B2 (ja) * 2006-05-30 2008-10-08 三菱重工業株式会社 常温接合によるデバイス、デバイス製造方法ならびに常温接合装置
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
WO2009036263A2 (en) 2007-09-14 2009-03-19 Cardinal Cg Company Low-maintenance coating technology
US8541792B2 (en) * 2010-10-15 2013-09-24 Guardian Industries Corp. Method of treating the surface of a soda lime silica glass substrate, surface-treated glass substrate, and device incorporating the same
US9347127B2 (en) * 2012-07-16 2016-05-24 Veeco Instruments, Inc. Film deposition assisted by angular selective etch on a surface
EP3541762B1 (en) 2016-11-17 2022-03-02 Cardinal CG Company Static-dissipative coating technology
RU174338U1 (ru) * 2017-01-24 2017-10-11 Акционерное общество "Ритм" Тверское производство тормозной аппаратуры (АО "Ритм" ТПТА) Шаровой кран воздушной магистрали железнодорожного подвижного состава
CN112481586A (zh) * 2019-09-12 2021-03-12 中国科学院物理研究所 超导组合薄膜的制备方法，及其产品和应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3491015A (en) * 1967-04-04 1970-01-20 Automatic Fire Control Inc Method of depositing elemental material from a low pressure electrical discharge
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
JPS5372A (en) * 1976-06-24 1978-01-05 Agency Of Ind Science & Technol Selective doping crystal growing method
JPS53123659A (en) * 1977-04-05 1978-10-28 Futaba Denshi Kogyo Kk Method of producing compound semiconductor wafer
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4255208A (en) * 1979-05-25 1981-03-10 Ramot University Authority For Applied Research And Industrial Development Ltd. Method of producing monocrystalline semiconductor films utilizing an intermediate water dissolvable salt layer
DD149549A1 (de) * 1980-03-24 1981-07-15 Hinneberg Hans Juergen Verfahren zur herstellung amorpher halbleiterschichten mittels ionenstrahlzerstaeubung
US4376688A (en) * 1981-04-03 1983-03-15 Xerox Corporation Method for producing semiconductor films
US4495044A (en) * 1983-05-17 1985-01-22 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Diamondlike flakes
US4522844A (en) * 1983-09-30 1985-06-11 The United States Of America As Represented By The Administrator, National Aeronautics And Space Administration Corrosion resistant coating
AU566986B2 (en) * 1984-09-04 1987-11-05 Standard Oil Company, The Deposition of passivated amorphous semi-conductor films by sputtering

Also Published As

Publication number Publication date
EP0207646A1 (en) 1987-01-07
IL78921A0 (en) 1986-09-30
US4673475A (en) 1987-06-16
JPS624313A (ja) 1987-01-10

Similar Documents

Publication Publication Date Title
IL78921A (en) Dual ion beam deposition of a hydrogenated amorphous silicon film
GB8502400D0 (en) Ion beam deposition
GB8607278D0 (en) Thin film forming
AU578530B2 (en) A tap holder
AU4396985A (en) Crystalline alpha-maltose
AU6885787A (en) Anti-inflammatory compounds for opthalmic use
AU543668B2 (en) High-velocity dip-coating of filament-like-materials
AU5350186A (en) Optical film
AU5052585A (en) Crystalline aluminosilicophosphate
GB2208390B (en) Thin film deposition process
AU9150482A (en) Deposition of amorphous alloy
GB8518834D0 (en) Forming moncrystalline thin film
GB8614683D0 (en) Manufacturing crystalline thin films
ZA882169B (en) Thin film deposition process
AU552614B2 (en) Substrate for amorphous silicon
DE3272503D1 (en) Plasma deposition of amorphous materials
AU568474B2 (en) Thin film deposition
AU543823B2 (en) Continuous deposition of amorphous semiconductor material
GB8709629D0 (en) Deposition of thin films
DE3571718D1 (en) Dual ion beam deposition of amorphous semiconductor films
AU4405785A (en) A holder for an applicator
AU572345B2 (en) Thin film forming device
EP0178634A3 (en) Amorphous soft magnetic thin film
EP0192161A3 (en) Amorphous soft magnetic thin film
GB2183500B (en) A method for the preparation of a thin semiconductor film