IL72244A - Passivation and insulation of iii-v semiconductor devices with pnictides - Google Patents

Passivation and insulation of iii-v semiconductor devices with pnictides

Info

Publication number
IL72244A
IL72244A IL72244A IL7224484A IL72244A IL 72244 A IL72244 A IL 72244A IL 72244 A IL72244 A IL 72244A IL 7224484 A IL7224484 A IL 7224484A IL 72244 A IL72244 A IL 72244A
Authority
IL
Israel
Prior art keywords
pnictides
passivation
insulation
iii
semiconductor devices
Prior art date
Application number
IL72244A
Other languages
English (en)
Other versions
IL72244A0 (en
Original Assignee
Stauffer Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/509,210 external-priority patent/US4567503A/en
Application filed by Stauffer Chemical Co filed Critical Stauffer Chemical Co
Publication of IL72244A0 publication Critical patent/IL72244A0/xx
Publication of IL72244A publication Critical patent/IL72244A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13063—Metal-Semiconductor Field-Effect Transistor [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
IL72244A 1983-06-29 1984-06-27 Passivation and insulation of iii-v semiconductor devices with pnictides IL72244A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/509,210 US4567503A (en) 1983-06-29 1983-06-29 MIS Device employing elemental pnictide or polyphosphide insulating layers
US58111584A 1984-02-17 1984-02-17

Publications (2)

Publication Number Publication Date
IL72244A0 IL72244A0 (en) 1984-10-31
IL72244A true IL72244A (en) 1988-03-31

Family

ID=27056471

Family Applications (1)

Application Number Title Priority Date Filing Date
IL72244A IL72244A (en) 1983-06-29 1984-06-27 Passivation and insulation of iii-v semiconductor devices with pnictides

Country Status (6)

Country Link
EP (1) EP0132326A3 (ko)
KR (1) KR850000780A (ko)
AU (1) AU2992784A (ko)
DK (1) DK317584A (ko)
IL (1) IL72244A (ko)
NO (1) NO842614L (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247349A (en) * 1982-11-16 1993-09-21 Stauffer Chemical Company Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
US4696828A (en) * 1984-02-17 1987-09-29 Stauffer Chemical Company Passivation of InP by plasma deposited phosphorus
FR2596581B1 (fr) * 1986-03-27 1988-07-08 Lyon Ecole Centrale Procede de passivation en surface d'un substrat en phosphure d'indium et produit nouveau obtenu
JPH088265B2 (ja) * 1988-09-13 1996-01-29 株式会社東芝 化合物半導体装置とその製造方法
EP0388612B1 (en) * 1989-03-24 1994-11-30 International Business Machines Corporation Semiconductor device with self-aligned contact to buried subcollector
KR101037315B1 (ko) * 2010-12-07 2011-05-26 주식회사 경동홀딩스 연탄벌크 파레타이저

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU553091B2 (en) * 1981-12-30 1986-07-03 Stauffer Chemical Company High phosphorus pholyphosphides
US4509066A (en) * 1983-06-29 1985-04-02 Stauffer Chemical Company Sputtered semiconducting films of catenated phosphorus material and devices formed therefrom
JPS5988830A (ja) * 1982-11-10 1984-05-22 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン 化合物半導体基板表面上にパッシベーション層を形成する方法
AU2993384A (en) * 1983-06-29 1986-01-02 Stauffer Chemical Company Preparation of polyphosphides using potassium graphite intercalate

Also Published As

Publication number Publication date
NO842614L (no) 1985-01-02
DK317584D0 (da) 1984-06-28
EP0132326A2 (en) 1985-01-30
DK317584A (da) 1984-12-30
EP0132326A3 (en) 1986-11-26
KR850000780A (ko) 1985-03-09
AU2992784A (en) 1985-01-03
IL72244A0 (en) 1984-10-31

Similar Documents

Publication Publication Date Title
EP0117111A3 (en) Semiconductor device assembly and package
EP0111899A3 (en) Semiconductor device and method of manufacturing the same
DE3565339D1 (en) Semiconductor memory device and method of manufacturing the same
EP0193841A3 (en) Semiconductor device and method of manufacturing the same
HK51294A (en) Semiconductor integrated circuit device and method of manufacturing the same
DE3665240D1 (en) Semiconductor device with structures of thyristors and diodes
EP0144909A3 (en) Integrated power switching semiconductor devices including igt and mosfet structures
DE3479548D1 (en) Semiconductor device and method of manufacture thereof
DE3475992D1 (en) Fabrication of group iii-v compound semiconductor devices having high and low resistivity regions
EP0130591A3 (en) Semiconductor device of resin-seal type
DE3468787D1 (en) Semiconductor power device and method of manufacture
DE3462971D1 (en) Power semiconductor device with main current section and emulation current section
DE3376043D1 (en) Semiconductor device and method of making the same
JPS5771185A (en) Iii-v group semiconductor device and method of fabricating same
EP0193934A3 (en) Semiconductor integreated circuit device and method of manufacturing the same
EP0146928A3 (en) Power semiconductor device with mesa type structure
IL72244A (en) Passivation and insulation of iii-v semiconductor devices with pnictides
GB2129613B (en) Semiconductor structures and manufacturing methods
DE3466746D1 (en) Semiconductor device with a semiconductor wafer and ring-shaped insulating body
DE3380104D1 (en) Substrate structure of semiconductor device and method of manufacturing the same
EP0144865A3 (en) Semiconductor wafer with an electrically-isolated semiconductor device
GB2186426B (en) Semiconductor device and method of fabrication thereof
DE3368348D1 (en) Semiconductor device and method of manufacturing same
PT80385A (en) Semiconductor device and arrangement
EP0110656A3 (en) Semiconductor device and method of manufacturing the same

Legal Events

Date Code Title Description
RH Patent void