IL48996A - Photovoltaic cells - Google Patents
Photovoltaic cellsInfo
- Publication number
- IL48996A IL48996A IL48996A IL4899676A IL48996A IL 48996 A IL48996 A IL 48996A IL 48996 A IL48996 A IL 48996A IL 4899676 A IL4899676 A IL 4899676A IL 48996 A IL48996 A IL 48996A
- Authority
- IL
- Israel
- Prior art keywords
- layer
- epitaxial layer
- epitaxial
- given
- junction
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 239000002674 ointment Substances 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 6
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 241000234282 Allium Species 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 101100240461 Dictyostelium discoideum ngap gene Proteins 0.000 description 1
- 241000448280 Elates Species 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/142—Photovoltaic cells having only PN homojunction potential barriers comprising multiple PN homojunctions, e.g. tandem cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55385075A | 1975-02-27 | 1975-02-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL48996A0 IL48996A0 (en) | 1976-04-30 |
| IL48996A true IL48996A (en) | 1977-08-31 |
Family
ID=24211007
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL48996A IL48996A (en) | 1975-02-27 | 1976-02-09 | Photovoltaic cells |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS51132793A (https=) |
| DE (1) | DE2607005C2 (https=) |
| FR (1) | FR2302593A1 (https=) |
| IL (1) | IL48996A (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2379189A1 (fr) * | 1977-01-26 | 1978-08-25 | Vivier Harry | Generation d'energie electrique et calorifique |
| US4179308A (en) * | 1978-06-23 | 1979-12-18 | Rca Corporation | Low cost high efficiency gallium arsenide homojunction solar cell incorporating a layer of indium gallium phosphide |
| FR2454705B1 (fr) * | 1979-04-19 | 1986-06-20 | Rca Corp | Cellule solaire au silicium amorphe |
| US4278474A (en) * | 1980-03-25 | 1981-07-14 | The United States Of America As Represented By The United States Department Of Energy | Device for conversion of electromagnetic radiation into electrical current |
| DE3208078A1 (de) * | 1982-03-03 | 1983-09-08 | Chevron Research Co., 94105 San Francisco, Calif. | Photozelle zur gewinnung von sonnenenergie |
| JPS58154274A (ja) * | 1982-03-09 | 1983-09-13 | シエブロン・リサ−チ・コンパニ− | 多層光電池 |
| JPS59172780A (ja) * | 1983-03-22 | 1984-09-29 | Nippon Telegr & Teleph Corp <Ntt> | モノリシツクカスケ−ド形太陽電池 |
| JPS59197177A (ja) * | 1984-03-16 | 1984-11-08 | Shunpei Yamazaki | 半導体装置 |
| JPS6041269A (ja) * | 1984-03-16 | 1985-03-04 | Shunpei Yamazaki | 半導体装置 |
| JPH0652799B2 (ja) * | 1987-08-15 | 1994-07-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JPH01307278A (ja) * | 1988-06-04 | 1989-12-12 | Nippon Mining Co Ltd | 太陽電池 |
| JP2717583B2 (ja) * | 1988-11-04 | 1998-02-18 | キヤノン株式会社 | 積層型光起電力素子 |
| JPH02218174A (ja) * | 1989-02-17 | 1990-08-30 | Mitsubishi Electric Corp | 光電変換半導体装置 |
| JPH0320454U (https=) * | 1990-06-25 | 1991-02-28 | ||
| JP2573086B2 (ja) * | 1990-08-24 | 1997-01-16 | 株式会社 半導体エネルギー研究所 | 半導体装置 |
| JPH07101753B2 (ja) * | 1992-08-05 | 1995-11-01 | 日立電線株式会社 | 積層型太陽電池 |
| US8093492B2 (en) | 2008-02-11 | 2012-01-10 | Emcore Solar Power, Inc. | Solar cell receiver for concentrated photovoltaic system for III-V semiconductor solar cell |
| US9331228B2 (en) | 2008-02-11 | 2016-05-03 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
| US8759138B2 (en) | 2008-02-11 | 2014-06-24 | Suncore Photovoltaics, Inc. | Concentrated photovoltaic system modules using III-V semiconductor solar cells |
| US9806215B2 (en) | 2009-09-03 | 2017-10-31 | Suncore Photovoltaics, Inc. | Encapsulated concentrated photovoltaic system subassembly for III-V semiconductor solar cells |
| US9012771B1 (en) | 2009-09-03 | 2015-04-21 | Suncore Photovoltaics, Inc. | Solar cell receiver subassembly with a heat shield for use in a concentrating solar system |
| JP5528882B2 (ja) * | 2010-03-30 | 2014-06-25 | 旭化成エレクトロニクス株式会社 | 赤外線センサ |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1129220A (fr) * | 1955-07-25 | 1957-01-17 | Piles photovoltaïques à rendement élevé | |
| US2949498A (en) * | 1955-10-31 | 1960-08-16 | Texas Instruments Inc | Solar energy converter |
| US3033714A (en) * | 1957-09-28 | 1962-05-08 | Sony Corp | Diode type semiconductor device |
| US3186873A (en) * | 1959-09-21 | 1965-06-01 | Bendix Corp | Energy converter |
| NL259446A (https=) * | 1959-12-30 | 1900-01-01 | ||
| FR2182652B2 (https=) * | 1972-04-19 | 1979-01-12 | Telecommunications Sa |
-
1976
- 1976-02-09 IL IL48996A patent/IL48996A/en unknown
- 1976-02-20 DE DE2607005A patent/DE2607005C2/de not_active Expired
- 1976-02-26 FR FR7605376A patent/FR2302593A1/fr active Granted
- 1976-02-27 JP JP51020186A patent/JPS51132793A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2607005A1 (de) | 1976-09-09 |
| FR2302593B1 (https=) | 1982-04-23 |
| IL48996A0 (en) | 1976-04-30 |
| DE2607005C2 (de) | 1986-02-20 |
| FR2302593A1 (fr) | 1976-09-24 |
| JPS51132793A (en) | 1976-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4017332A (en) | Solar cells employing stacked opposite conductivity layers | |
| Yamaguchi et al. | Multi-junction solar cells paving the way for super high-efficiency | |
| IL48996A (en) | Photovoltaic cells | |
| US8912428B2 (en) | High efficiency multijunction II-VI photovoltaic solar cells | |
| US5019177A (en) | Monolithic tandem solar cell | |
| US7148417B1 (en) | GaP/silicon tandem solar cell with extended temperature range | |
| US5322572A (en) | Monolithic tandem solar cell | |
| US6316715B1 (en) | Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material | |
| US5405453A (en) | High efficiency multi-junction solar cell | |
| US4255211A (en) | Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface | |
| US7217882B2 (en) | Broad spectrum solar cell | |
| US4278474A (en) | Device for conversion of electromagnetic radiation into electrical current | |
| US4681982A (en) | Light-electricity conversion semiconductor device | |
| CA1222043A (en) | Solar cells and photodetectors | |
| US20040261837A1 (en) | Multi-junction solar cell device | |
| US20100122764A1 (en) | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells | |
| US4631352A (en) | High band gap II-VI and III-V tunneling junctions for silicon multijunction solar cells | |
| US20120132250A1 (en) | Contact layout and string interconnection of inverted metamorphic multijunction solar cells | |
| US20060162767A1 (en) | Multi-junction, monolithic solar cell with active silicon substrate | |
| CN101165925A (zh) | 具有局部化掺杂的顶盖层的太阳能电池结构 | |
| US4427841A (en) | Back barrier heteroface AlGaAs solar cell | |
| JP2022509963A (ja) | アルミニウム－ヒ素およびインジウム－リンベースのヘテロ接合による光起電セル、関連する多接合セル、および関連する方法 | |
| US9853180B2 (en) | Inverted metamorphic multijunction solar cell with surface passivation | |
| Licht | High Efficiency Solar Cells (What are the highest solar energy conversion efficiencies?) | |
| Böer | Solar cells |