IL37860A - Effect transistor adapted for microwave applications - Google Patents

Effect transistor adapted for microwave applications

Info

Publication number
IL37860A
IL37860A IL37860A IL3786071A IL37860A IL 37860 A IL37860 A IL 37860A IL 37860 A IL37860 A IL 37860A IL 3786071 A IL3786071 A IL 3786071A IL 37860 A IL37860 A IL 37860A
Authority
IL
Israel
Prior art keywords
effect transistor
microwave applications
transistor adapted
microwave
applications
Prior art date
Application number
IL37860A
Other languages
English (en)
Other versions
IL37860A0 (en
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL37860A0 publication Critical patent/IL37860A0/xx
Publication of IL37860A publication Critical patent/IL37860A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
IL37860A 1970-11-02 1971-10-06 Effect transistor adapted for microwave applications IL37860A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US8601770A 1970-11-02 1970-11-02

Publications (2)

Publication Number Publication Date
IL37860A0 IL37860A0 (en) 1972-01-27
IL37860A true IL37860A (en) 1974-01-14

Family

ID=22195616

Family Applications (1)

Application Number Title Priority Date Filing Date
IL37860A IL37860A (en) 1970-11-02 1971-10-06 Effect transistor adapted for microwave applications

Country Status (4)

Country Link
US (1) US3700976A (OSRAM)
FR (1) FR2112391B1 (OSRAM)
GB (1) GB1362817A (OSRAM)
IL (1) IL37860A (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4245230A (en) * 1979-09-28 1981-01-13 Hughes Aircraft Company Resistive Schottky barrier gate microwave switch
US4989061A (en) * 1986-09-05 1991-01-29 General Electric Company Radiation hard memory cell structure with drain shielding
FR2973158B1 (fr) * 2011-03-22 2014-02-28 Soitec Silicon On Insulator Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (OSRAM) * 1961-08-17
US3304469A (en) * 1964-03-03 1967-02-14 Rca Corp Field effect solid state device having a partially insulated electrode
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3378688A (en) * 1965-02-24 1968-04-16 Fairchild Camera Instr Co Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3514676A (en) * 1967-10-25 1970-05-26 North American Rockwell Insulated gate complementary field effect transistors gate structure
CH477779A (de) * 1968-12-20 1969-08-31 Ibm Verzögerungseinrichtung für elektrische Signale
US3562608A (en) * 1969-03-24 1971-02-09 Westinghouse Electric Corp Variable integrated coupler

Also Published As

Publication number Publication date
FR2112391B1 (OSRAM) 1977-08-05
US3700976A (en) 1972-10-24
GB1362817A (en) 1974-08-07
FR2112391A1 (OSRAM) 1972-06-16
IL37860A0 (en) 1972-01-27

Similar Documents

Publication Publication Date Title
YU120671A (en) Gibka toplotna cev
CA937561A (en) Heat transporting device
GB1343174A (en) Semiconductor devices
HK59976A (en) Transistor circuit
GB1348066A (en) Metal insulation semiconductor field effect transistors
AU3639671A (en) Pipe-line
HK34379A (en) Tetrahydronaphthyloxyaminopropanols and related compounds
GB1343666A (en) Low noise field effect transistor
GB1348697A (en) Semiconductors
GB1345528A (en) Field effect transistor devices
MY7400059A (en) Transistor assembly
CA946047A (en) Gate circuit
ZA717693B (en) N-substituted-2-carboxy-1-azacyclic compounds
AU452187B2 (en) Field effect transistor circuit
IL37860A (en) Effect transistor adapted for microwave applications
CY922A (en) Benzobicycloalkane compounds
ZA713364B (en) Prganic compounds and process
CA934069A (en) Field effect transistor circuit
AU3731471A (en) Bis-triazole compounds
HK1877A (en) 16beta-hydrocarbon substituted estrane compounds
ZA711840B (en) Pge3-type compounds
ZA702318B (en) Behandeling van afvalwater
CH533369A (de) Mikrowelleneinrichtung
CA831692A (en) Transistor
CA838342A (en) Transistor