IL301730A - התקנים ושיטות לקרינה קצרת גל ומטרות תואמות - Google Patents

התקנים ושיטות לקרינה קצרת גל ומטרות תואמות

Info

Publication number
IL301730A
IL301730A IL30173023A IL30173023A IL301730A IL 301730 A IL301730 A IL 301730A IL 30173023 A IL30173023 A IL 30173023A IL 30173023 A IL30173023 A IL 30173023A IL 301730 A IL301730 A IL 301730A
Authority
IL
Israel
Prior art keywords
short
methods
suitable targets
wave systems
wave
Prior art date
Application number
IL30173023A
Other languages
English (en)
Other versions
IL301730B1 (he
IL301730B2 (he
Inventor
Papeer Evgeny
Refael Frank Yechiel
Original Assignee
L2X Labs Ltd
Papeer Evgeny
Refael Frank Yechiel
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by L2X Labs Ltd, Papeer Evgeny, Refael Frank Yechiel filed Critical L2X Labs Ltd
Priority to IL301730A priority Critical patent/IL301730B2/he
Publication of IL301730A publication Critical patent/IL301730A/he
Priority to PCT/IL2024/050307 priority patent/WO2024201456A1/en
Publication of IL301730B1 publication Critical patent/IL301730B1/he
Publication of IL301730B2 publication Critical patent/IL301730B2/he

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/10—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void
    • G01J1/16—Photometry, e.g. photographic exposure meter by comparison with reference light or electric value provisionally void using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
    • H05G2/005—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state containing a metal as principal radiation generating component

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL301730A 2023-03-27 2023-03-27 התקנים ושיטות לקרינה קצרת גל ומטרות תואמות IL301730B2 (he)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IL301730A IL301730B2 (he) 2023-03-27 2023-03-27 התקנים ושיטות לקרינה קצרת גל ומטרות תואמות
PCT/IL2024/050307 WO2024201456A1 (en) 2023-03-27 2024-03-26 Short-wave systems and methods and suitable targets thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IL301730A IL301730B2 (he) 2023-03-27 2023-03-27 התקנים ושיטות לקרינה קצרת גל ומטרות תואמות

Publications (3)

Publication Number Publication Date
IL301730A true IL301730A (he) 2023-04-01
IL301730B1 IL301730B1 (he) 2024-09-01
IL301730B2 IL301730B2 (he) 2025-01-01

Family

ID=90719010

Family Applications (1)

Application Number Title Priority Date Filing Date
IL301730A IL301730B2 (he) 2023-03-27 2023-03-27 התקנים ושיטות לקרינה קצרת גל ומטרות תואמות

Country Status (2)

Country Link
IL (1) IL301730B2 (he)
WO (1) WO2024201456A1 (he)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371442B2 (ja) * 1992-04-13 2003-01-27 株式会社ニコン レーザプラズマｘ線源及びｘ線の発生方法及びｘ線露光装置
JP5176052B2 (ja) * 2005-10-05 2013-04-03 国立大学法人大阪大学 放射線源用ターゲット生成供給装置
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
JPWO2013180007A1 (ja) * 2012-05-29 2016-01-21 ギガフォトン株式会社 極端紫外光生成装置および極端紫外光生成システム
NL2011580A (en) * 2012-11-07 2014-05-08 Asml Netherlands Bv Method and apparatus for generating radiation.
US9544984B2 (en) * 2013-07-22 2017-01-10 Kla-Tencor Corporation System and method for generation of extreme ultraviolet light
US10217625B2 (en) * 2015-03-11 2019-02-26 Kla-Tencor Corporation Continuous-wave laser-sustained plasma illumination source
US9476841B1 (en) * 2016-06-14 2016-10-25 OOO “Isteq B.V.” High-brightness LPP EUV light source
US11252810B2 (en) 2017-11-24 2022-02-15 Isteq B.V. Short-wavelength radiation source with multisectional collector module and method of collecting radiation
US10887973B2 (en) 2018-08-14 2021-01-05 Isteq B.V. High brightness laser-produced plasma light source
RU2706713C1 (ru) 2019-04-26 2019-11-20 Общество С Ограниченной Ответственностью "Эуф Лабс" Источник коротковолнового излучения высокой яркости
DE102020202179A1 (de) * 2020-02-20 2021-08-26 Carl Zeiss Smt Gmbh Optische Anordnung für die EUV-Lithographie und Verfahren zum Bestimmen eines Soll-Werts eines Ziel-Plasmaparameters

Also Published As

Publication number Publication date
IL301730B1 (he) 2024-09-01
IL301730B2 (he) 2025-01-01
WO2024201456A1 (en) 2024-10-03

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