IL300189B2 - Structure measurements using Raman spectroscopy - Google Patents

Structure measurements using Raman spectroscopy

Info

Publication number
IL300189B2
IL300189B2 IL300189A IL30018923A IL300189B2 IL 300189 B2 IL300189 B2 IL 300189B2 IL 300189 A IL300189 A IL 300189A IL 30018923 A IL30018923 A IL 30018923A IL 300189 B2 IL300189 B2 IL 300189B2
Authority
IL
Israel
Prior art keywords
patterned structure
control unit
measured data
light
computer readable
Prior art date
Application number
IL300189A
Other languages
Hebrew (he)
Other versions
IL300189B1 (en
IL300189A (en
Original Assignee
נובה בע מ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by נובה בע מ filed Critical נובה בע מ
Publication of IL300189A publication Critical patent/IL300189A/en
Publication of IL300189B1 publication Critical patent/IL300189B1/en
Publication of IL300189B2 publication Critical patent/IL300189B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0666—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using an exciting beam and a detection beam including surface acoustic waves [SAW]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Acoustics & Sound (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Radar Systems Or Details Thereof (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Claims (48)

1. WE CLAIM 1. A system for use in measuring one or more characteristics of a patterned structure, the measurement system comprising: a light source system that defines an illumination channel, the light source system comprises multiple illumination sources; a detection system that defines a collection channel; wherein the detection system is configured to obtain measured data indicative of at least one Raman spectrum obtained from the patterned structure; one or more light affecting units that are configured to affect one or more illumination conditions and to affect one or more collection conditions; wherein the one or more illumination conditions comprise illumination polarization; wherein the one or more collection conditions comprise collection polarization; and a control unit that is configured to apply dimensional metrology on the measured data to provide one or more dimensional properties of the patterned structure from the measured data.
2. The system according to claim 1, wherein the light source system is configured to illuminate the patterned structure with normal incidence.
3. The system according to claim 1, wherein the one or more illumination conditions comprise illumination retardation, and wherein the one or more collection conditions comprise collection retardation.
4. The system according to claim 1, wherein the control unit that is configured to apply dimensional metrology using a multifaceted modeling method.
5. The system according to claim 1, wherein the control unit that is configured to apply dimensional metrology by performing a comprehensive characterization of an electromagnetic field penetration into the patterned structure and out of the patterned structure, and to model a creation of the at least one Raman spectrum inside the patterned structure.
6. The system according to claim 1, wherein the light source system is configured to generate light within a wavelength range between 405 nanometer and 532 nanometer.
7. The system according to claim 1, wherein the light source system is configured to generate light within a wavelength range between 244 nanometer and 633 nanometer.
8. The system according to claim 1 wherein at least one light affecting unit of the one or more light affecting units comprises a polarization rotation assembly.
9. The system according to claim 1 wherein at least one light affecting unit of the one or more light affecting units comprises an aperture variation assembly.
10. The system according to claim 1, wherein the control unit is configured to determine acquisition parameters of the system to be applied during a certain measurement based on an outcome of one or more previous measurements.
11. The system according to claim 1, wherein the control unit is configured to select a measurement scheme based on a parameter-dependent library of theoretical spectra.
12. The system according to claim 1, wherein the one or more dimensional properties comprise stress.
13. The system according to claim 12, wherein the control unit is configured to deduce the stress from the measured data, without using a model-based process.
14. The system according to claim 12, wherein the control unit is configured to deduce the stress from the measured data, by using a model-based process.
15. The system according to claim 12, wherein the control unit is configured to deduce the stress by (i) identifying, using measured data from a certain measurement, that the patterned structure is suspected of strain relaxation; (ii) preform one or more other measurements at other locations of the patterned structure, and (iii) determined whether stress exists based on certain measurement and the one or more other measurements .
16. The system according to claim 1, wherein the one or more dimensional properties comprise crystallinity.
17. A method for measuring one or more characteristics of a patterned structure, the method comprises: illuminating the patterned structure by a light source system that defines an illumination channel, the light source system comprises multiple illumination sources; obtaining, by a detection system that defines a collection channel, measured data indicative of at least one Raman spectrum obtained from the patterned structure; affecting, by one or more light affecting units, one or more illumination conditions and to affect one or more collection conditions; wherein the one or more illumination conditions comprise illumination polarization; wherein the one or more collection conditions comprise collection polarization; and applying, by a control unit, dimensional metrology on the measured data to provide one or more dimensional properties of the patterned structure from the measured data.
18. The method according to claim 17, comprising illuminating, by the light source system, the patterned structure with normal incidence.
19. The method according to claim 17, wherein the one or more illumination conditions comprise illumination retardation, and wherein the one or more collection conditions comprise collection retardation.
20. The method according to claim 17, comprising applying by the control unit dimensional metrology using a multifaceted modeling method.
21. The method according to claim 17, comprising applying by the control unit dimensional metrology by performing a comprehensive characterization of an electromagnetic field penetration into the patterned structure and out of the patterned structure, and to model a creation of the at least one Raman spectrum inside the patterned structure.
22. The method according to claim 17, comprising generating, by the light source system, light within a wavelength range between 405 nanometer and 532 nanometer.
23. The method according to claim 17, comprising generating, by the light source system, light within a wavelength range between 244 nanometer and 633 nanometer.
24. The method according to claim 17 wherein at least one light affecting unit of the one or more light affecting units comprises a polarization rotation assembly.
25. The method according to claim 17 wherein at least one light affecting unit of the one or more light affecting units comprises an aperture variation assembly.
26. The method according to claim 17, comprising determining by the control unit acquisition parameters of the system to be applied during a certain measurement based on an outcome of one or more previous measurements.
27. The method according to claim 17, comprising selecting by the control unit a measurement scheme based on a parameter-dependent library of theoretical spectra.
28. The method according to claim 17, wherein the one or more dimensional properties comprise stress.
29. The method according to claim 28, comprising deducing, by the control unit, the stress from the measured data, without using a model-based process.
30. The method according to claim 28, comprising deducing, by the control unit, the stress from the measured data, by using a model-based process.
31. The method according to claim 28, comprising deducing, by the control unit, the stress by (i) identifying, using measured data from a certain measurement, that the patterned structure is suspected of strain relaxation; (ii) preforming one or more other measurements at other locations of the patterned structure, and (iii) determining whether stress exists based on certain measurement and the one or more other measurements .
32. The method according to claim 17, wherein the one or more dimensional properties comprise crystallinity.
33. A non-transitory computer readable medium for measuring one or more characteristics of a patterned structure, the non-transitory computer readable medium stores instructions for: illuminating the patterned structure by a light source system that defines an illumination channel, the light source system comprises multiple illumination sources; obtaining, by a detection system that defines a collection channel, measured data indicative of at least one Raman spectrum obtained from the patterned structure; affecting, by one or more light affecting units, one or more illumination conditions and to affect one or more collection conditions; wherein the one or more illumination conditions comprise illumination polarization; wherein the one or more collection conditions comprise collection polarization; and applying, by a control unit, dimensional metrology on the measured data to provide one or more dimensional properties of the patterned structure from the measured data.
34. The non-transitory computer readable medium according to claim 33, that stores instructions for illuminating, by the light source system, the patterned structure with normal incidence.
35. The non-transitory computer readable medium according to claim 33, wherein the one or more illumination conditions comprise illumination retardation, and wherein the one or more collection conditions comprise collection retardation.
36. The non-transitory computer readable medium according to claim 33, that stores instructions for applying by the control unit dimensional metrology using a multifaceted modeling method.
37. The non-transitory computer readable medium according to claim 33, that stores instructions for applying by the control unit dimensional metrology by performing a comprehensive characterization of an electromagnetic field penetration into the patterned structure and out of the patterned structure, and to model a creation of the at least one Raman spectrum inside the patterned structure.
38. The non-transitory computer readable medium according to claim 33, that stores instructions for generating, by the light source system, light within a wavelength range between 405 nanometer and 532 nanometer.
39. The non-transitory computer readable medium according to claim 33, that stores instructions for generating, by the light source system, light within a wavelength range between 244 nanometer and 633 nanometer.
40. The non-transitory computer readable medium according to claim 33 wherein at least one light affecting unit of the one or more light affecting units comprises a polarization rotation assembly.
41. The non-transitory computer readable medium according to claim 33 wherein at least one light affecting unit of the one or more light affecting units comprises an aperture variation assembly.
42. The non-transitory computer readable medium according to claim 33, that stores instructions for determining by the control unit acquisition parameters of the system to be applied during a certain measurement based on an outcome of one or more previous measurements.
43. The non-transitory computer readable medium according to claim 33, that stores instructions for selecting by the control unit a measurement scheme based on a parameter-dependent library of theoretical spectra.
44. The non-transitory computer readable medium according to claim 33, wherein the one or more dimensional properties comprise stress.
45. The non-transitory computer readable medium according to claim 44, that stores instructions for deducing, by the control unit, the stress from the measured data, without using a model-based process.
46. The non-transitory computer readable medium according to claim 44, that stores instructions for deducing, by the control unit, the stress from the measured data, by using a model-based process.
47. The non-transitory computer readable medium according to claim 44, that stores instructions for deducing, by the control unit, the stress by (i) identifying, using measured data from a certain measurement, that the patterned structure is suspected of strain relaxation; (ii) preforming one or more other measurements at other locations of the patterned structure, and (iii) determining whether stress exists based on certain measurement and the one or more other measurements .
48. The non-transitory computer readable medium according to claim 33, wherein the one or more dimensional properties comprise crystallinity.
IL300189A 2015-12-15 2016-12-15 Structure measurements using Raman spectroscopy IL300189B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562267291P 2015-12-15 2015-12-15
PCT/IL2016/051349 WO2017103934A1 (en) 2015-12-15 2016-12-15 Raman spectroscopy based measurements in patterned structures

Publications (3)

Publication Number Publication Date
IL300189A IL300189A (en) 2023-03-01
IL300189B1 IL300189B1 (en) 2024-03-01
IL300189B2 true IL300189B2 (en) 2024-07-01

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IL300189A IL300189B2 (en) 2015-12-15 2016-12-15 Structure measurements using Raman spectroscopy
IL259976A IL259976B2 (en) 2015-12-15 2016-12-15 Hybrid metrology method and system
IL259980A IL259980B2 (en) 2015-12-15 2018-06-12 Raman spectroscopy based measurements in patterned structures

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US (9) US10564106B2 (en)
KR (4) KR102758970B1 (en)
CN (4) CN113933286B (en)
IL (3) IL300189B2 (en)
TW (4) TWI729049B (en)
WO (2) WO2017103934A1 (en)

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KR20180102582A (en) 2018-09-17
US20250389665A1 (en) 2025-12-25
CN113933286A (en) 2022-01-14
WO2017103935A1 (en) 2017-06-22
IL259980B1 (en) 2023-03-01
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