CN112729108B - Calibration method of optical critical dimension OCD measuring equipment - Google Patents
Calibration method of optical critical dimension OCD measuring equipment Download PDFInfo
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- CN112729108B CN112729108B CN202011507757.1A CN202011507757A CN112729108B CN 112729108 B CN112729108 B CN 112729108B CN 202011507757 A CN202011507757 A CN 202011507757A CN 112729108 B CN112729108 B CN 112729108B
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- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
Abstract
The embodiment of the application discloses a method for calibrating optical critical dimension OCD measuring equipment, which comprises the following steps: providing a sample to be measured, wherein the sample to be measured is provided with an exposed layer to be measured; measuring the layer to be measured of the sample to be measured by using OCD measuring equipment to obtain OCD measuring data; determining a layer to be measured of the calibration sample corresponding to the layer to be measured of the sample to be measured from a calibration database, and acquiring corresponding calibration data according to the determined layer to be measured of the calibration sample; wherein the calibration database comprises calibration data corresponding to different layers to be measured of a calibration sample; and calibrating the OCD measuring equipment according to the calibration data and the OCD measuring data.
Description
Technical Field
The embodiment of the application relates to the field of semiconductor manufacturing, in particular to a calibration method of Optical Critical Dimension (OCD) measuring equipment.
Background
In the semiconductor integrated circuit industry, rapid and effective detection of Critical Dimensions (CD) of a chip structure during design and manufacture of the chip structure is an important means for controlling the yield and mass production efficiency of the chip. As an important Critical Dimension measurement technique, optical Critical Dimension (OCD) measurement technique is increasingly dominant in the production of integrated circuit products.
However, as the process in the semiconductor integrated circuit industry is continuously upgraded, the requirement for the measurement accuracy of the OCD is higher and higher, and the measurement accuracy of the OCD can be improved by calibrating the OCD measurement device.
Disclosure of Invention
In view of the above, embodiments of the present application provide a calibration method for an optical critical dimension OCD measurement apparatus to solve at least one problem in the prior art.
In order to achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a calibration method for an optical critical dimension OCD measurement apparatus, where the method includes:
providing a sample to be measured, wherein the sample to be measured is provided with an exposed layer to be measured;
measuring the layer to be measured of the sample to be measured by using OCD measuring equipment to obtain OCD measuring data;
determining a layer to be measured of the calibration sample corresponding to the layer to be measured of the sample to be measured from a calibration database, and acquiring corresponding calibration data according to the determined layer to be measured of the calibration sample; wherein the calibration database comprises calibration data corresponding to different layers to be measured of a calibration sample;
and calibrating the OCD measuring equipment according to the calibration data and the OCD measuring data.
In an alternative embodiment, the calibration data in the calibration data base is obtained by measuring the layer to be measured of the calibration sample by a Critical Dimension Scanning Electronic Microscope (CDSEM).
In an optional embodiment, the method further comprises: constructing a calibration database, which specifically comprises the following steps:
processing the calibration sample by a chemical mechanical polishing process;
measuring the processed calibration sample through the CDSEM to obtain calibration data;
and constructing a calibration database based on the calibration data.
In an alternative embodiment, the processing the calibration sample by a chemical mechanical polishing process includes:
providing a calibration sample comprising a plurality of layers to be measured;
grinding the calibration sample successively by a chemical mechanical grinding process to obtain calibration samples exposing different layers to be measured step by step;
the measuring the processed calibration sample by the CDSEM to obtain calibration data comprises:
after each grinding of the calibration sample, the current calibration sample is measured by CDSEM to obtain calibration data for calibration samples exposing different layers to be measured.
In an optional embodiment, after the successively grinding the calibration sample by the chemical mechanical grinding process, the method further comprises:
obtaining structural parameters of the calibration sample;
and determining the layer to be measured exposed by the calibration sample according to the structural parameters of the calibration sample.
In an alternative embodiment, the building a calibration database based on the calibration data includes:
and constructing a calibration database based on the corresponding relation between the calibration data of the different layers to be measured exposed by the calibration sample and the calibration sample exposing the different layers to be measured.
In an alternative embodiment, the structural parameters include at least one of: thickness, weight, identification of the target measurement structure.
In an alternative embodiment, the target measurement structure comprises a target measurement structure located in the functional region or a target measurement structure located in the cutting street.
In an alternative embodiment, the calibration data and the OCD measurement data are of the same data type;
wherein the calibration data comprises the critical dimension of the calibration sample, and the OCD measurement data comprises the critical dimension of the sample to be measured.
In an alternative embodiment, the calibration sample and the sample to be tested are wafers with the same manufacturing process and structure.
The embodiment of the application discloses a method for calibrating optical critical dimension OCD measuring equipment, which comprises the following steps: providing a sample to be measured, wherein the sample to be measured is provided with an exposed layer to be measured; measuring the layer to be measured of the sample to be measured by using OCD measuring equipment to obtain OCD measuring data; determining a layer to be measured of the calibration sample corresponding to the layer to be measured of the sample to be measured from a calibration database, and acquiring corresponding calibration data according to the determined layer to be measured of the calibration sample; wherein the calibration database comprises calibration data corresponding to different layers to be measured of a calibration sample; and calibrating the OCD measuring equipment according to the calibration data and the OCD measuring data. The embodiment of the application provides a calibration method of OCD measuring equipment, which calibrates the OCD measuring equipment through OCD measuring data and calibration data in a calibration data base, so that the measurement accuracy of OCD can be improved through calibration of the OCD measuring equipment.
Drawings
Fig. 1 is a schematic flow chart illustrating an implementation of a calibration method for an optical critical dimension OCD measurement device according to an embodiment of the present disclosure;
fig. 2 is a diagram illustrating a correspondence between wafer quality and layer number provided in an embodiment of the present application;
fig. 3 is a diagram of measured data of a pad in a scribe lane according to an embodiment of the present disclosure.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It should be understood that spatial relationship terms such as "below … …", "below … …", "below … …", "above … …", "above", etc., may be used herein for ease of description to describe the relationship of one element or feature to other elements or features shown in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
An embodiment of the present application provides a calibration method for an optical critical dimension OCD measurement device, and fig. 1 is a schematic implementation flow diagram of the calibration method for the optical critical dimension OCD measurement device provided in the embodiment of the present application, and as shown in fig. 1, the method mainly includes the following steps:
In the embodiment of the present application, the sample to be tested may be a single wafer or a partial structure cut from a wafer. The partial structure may be a bare chip on which a semiconductor device is formed or a structure in a process of forming a semiconductor device. And a doped region and/or a semiconductor device and the like are formed in the sample to be detected. The sample to be tested can comprise a dielectric layer, a semiconductor layer, a metal layer and the like. Here, the sample to be measured is preferably a wafer on which a semiconductor device is formed. Wherein the sample to be measured has an exposed layer to be measured. Here, the layer to be measured is a layer exposed on the upper surface of the sample to be measured.
In the embodiment of the present application, the sample to be measured has an exposed layer to be measured, and a specific manner of determining the exposed layer to be measured of the sample to be measured may be as follows: obtaining the structural parameters of the sample to be detected, wherein the structural parameters of the sample to be detected comprise at least one of the following parameters: the thickness of the sample to be measured, the weight of the sample to be measured, and the identification ID of the target measurement structure on the sample to be measured. Here, the layer to be measured exposed by the sample to be measured, that is, the layer to be measured where the target measurement structure on the sample to be measured is located, may be determined according to the structural parameters of the sample to be measured. In some embodiments, the layer to be measured to which the sample to be measured is exposed may be determined according to a thickness loss of the sample to be measured or a weight loss of the sample to be measured. The thickness loss of the sample to be measured can be calculated according to the total thickness and the current thickness of the sample to be measured; and calculating the weight loss of the sample to be detected according to the total weight and the current weight of the sample to be detected.
And step 102, measuring the layer to be measured of the sample to be measured through OCD measuring equipment to obtain OCD measuring data.
In this application embodiment, it is right through OCD measuring equipment target measurement structure on the sample that awaits measuring measures, obtains the OCD measured data of target measurement structure on the sample that awaits measuring. Here, the target measurement structure may be any structure on the exposed surface to be measured of the sample to be measured. The basic working principle of the OCD measuring equipment is as follows: (1) Establishing a theoretical spectrum database corresponding to the appearance of the sample to be detected; (2) Obtaining a measurement spectrum of a sample to be measured through OCD measurement equipment; (3) And searching a characteristic spectrum which is best matched with the measured spectrum from the theoretical spectrum database so as to determine the OCD measured data of the sample to be measured. Here, the OCD measurement data may be a morphological parameter of the sample to be measured, for example, a critical dimension of the sample to be measured.
In the embodiments of the present application, the calibration data in the calibration data base is obtained by measuring the layer to be measured of the calibration sample by the cd sem.
In an embodiment of the present application, the method further includes: the calibration samples were processed by a Chemical Mechanical Polishing (CMP) process; measuring the processed calibration sample by a Critical Dimension Scanning Electronic Microscope (CDSEM) to obtain calibration data; and constructing a calibration database based on the calibration data. Here, the calibration sample and the sample to be measured are wafers having the same manufacturing process and structure. In this way, the OCD measurement data of the sample to be measured can be calibrated by the calibration data of the calibration sample.
In the embodiment of the present application, the specific process of processing the calibration sample by the chemical mechanical polishing process is as follows: providing a calibration sample comprising a plurality of layers to be measured; and grinding the calibration sample successively through a chemical mechanical grinding process to obtain calibration samples exposing different layers to be measured. It should be noted that the calibration sample includes multiple layers to be measured, which may be customized by an engineer, in other words, in an actual application, the engineer may define the layers to be measured in the calibration sample according to actual measurement requirements and process requirements. A calibration data base can thus be constructed based on the calibration data of the layers to be measured of the calibration sample.
In an embodiment of the present application, after each grinding of the calibration sample by a chemical mechanical grinding process, the method further comprises: obtaining structural parameters of a current calibration sample; and determining the layer to be measured exposed by the current calibration sample according to the structural parameters of the current calibration sample. The structural parameters of the calibration sample include at least one of: a thickness of the calibration sample, a weight of the calibration sample, an identification, ID, of a target measurement structure on the calibration sample. Here, the target measurement structure may be any structure on the surface to be measured of the calibration sample. The layer to be measured exposed by the calibration sample, i.e. the layer to be measured where the target measurement structure on the calibration sample is located, can be determined from the structural parameters of the calibration sample. In some embodiments, the layer to be measured to which the calibration sample is exposed may be determined from the thickness loss of the calibration sample or the weight loss of the calibration sample. Here, the thickness loss of the calibration sample can be calculated according to the total thickness and the current thickness of the calibration sample; the weight loss of the calibration sample can be calculated according to the total weight and the current weight of the calibration sample.
Fig. 2 is a diagram of a correspondence relationship between wafer mass and the number of layers provided in an embodiment of the present application, and as shown in fig. 2, a mass loss of a calibration sample can be obtained by measuring the mass of a calibration sample before and after chemical mechanical polishing, and the number of lost layers of the calibration sample can be determined based on the correspondence relationship between the mass loss of the calibration sample and the number of layers of the calibration sample, so that the number of layers of the calibration sample remaining at this time can be determined according to the total number of layers of the calibration sample, and thus, the number of layers of the layer to be measured exposed at this time of the calibration sample can be determined. It should be noted that the correspondence between the numerical values and the mass and the number of layers of the calibration sample in fig. 2 is only an illustrative description, and is not a limitation on the mass of the calibration sample and a limitation on the correspondence between the mass and the number of layers of the calibration sample in the embodiment of the present application.
In the embodiment of the present application, the CDSEM is used to measure the processed calibration sample, and the specific process of obtaining the calibration data is as follows: and measuring the calibration samples exposing different layers to be measured successively through CDSEM to obtain calibration data of the calibration samples exposing different layers to be measured. Here, the calibration data may be a topographical parameter of the calibration sample, such as a critical dimension of the calibration sample.
Here, the sample preparation and measurement may be repeated using only one calibration sample including N layers of layers to be measured, by: grinding the calibration sample by a chemical mechanical grinding process to obtain a calibration sample exposing the first layer to be measured, and measuring the calibration sample exposing the first layer to be measured by a CDSEM (compact disc-scanning microscope) to obtain calibration data of the first layer to be measured; then, the calibration sample exposing the first layer to be measured is transmitted to a chemical mechanical polishing machine for polishing to obtain a calibration sample exposing the second layer to be measured, and the calibration sample exposing the second layer to be measured is measured through a CDSEM to obtain calibration data of the second layer to be measured; … …; and then, transmitting the calibration sample exposing the (N-1) th layer to be measured to a chemical mechanical polishing machine for polishing to obtain the calibration sample exposing the (N) th layer to be measured, measuring the calibration sample exposing the (N) th layer to be measured by using a CDSEM to obtain calibration data of the (N) th layer to be measured, and finishing the measurement of all the N layers to be measured of the calibration sample so as to finish the construction of the calibration database. In this way, by combining the chemical mechanical polishing process and the CDSEM, a large amount of calibration data can be obtained quickly, and a calibration database is constructed based on the calibration data, and the calibration data is data of the whole wafer (calibration sample), so that the calibration data in the calibration database can reflect the whole condition of the calibration sample.
It should be noted that the cmp apparatus and the CDSEM are both tools in the semiconductor manufacturing system (FAB), and therefore, in the calibration database construction method for obtaining calibration data by combining the cmp process and the CDSEM, the calibration sample is in the semiconductor manufacturing system (FAB), so that the calibration sample can be subjected to the repeated cmp and the repeated CDSEM measurement.
In an embodiment of the present application, the target measurement structure on the calibration sample includes a target measurement structure located in the functional region or a target measurement structure located in the scribe line. In other words, when the CDSEM measurement is performed on the calibration sample, the target measurement structure located in the functional region may be measured, and the target measurement structure located in the scribe line may also be measured. The calibration sample is provided with a functional area and a cutting path. The calibration sample can be provided with a plurality of criss-cross cutting channels, and the wafer is divided into a plurality of functional areas by the criss-cross cutting channels.
Here, the target measurement structure located in the scribe line may be specifically a pad (pad) disposed in the scribe line, and a thickness loss of the calibration sample (wafer) may be obtained according to the thickness loss of the pad, and the layer to be measured exposed by the calibration sample may be determined according to the thickness loss of the calibration sample (wafer). In the actual measurement process, the thickness of the target measurement structure located in the functional region is difficult to measure, and the thickness of the target measurement structure located in the scribe line is easy to measure, so that the thickness loss of the functional region (located on the same wafer as the scribe line) can be represented by measuring the thickness loss of the pad in the scribe line, and the thickness loss of the calibration sample (wafer) can be obtained.
Fig. 3 is a graph of measurement data of a pad in a scribe line according to an embodiment of the present disclosure, and as shown in fig. 3, the total number of layers of a calibration sample is known to be 71, and the number of lost layers of the calibration sample can be determined by measuring the thickness loss of a pad in the scribe line, so that the number of layers of the calibration sample remaining at this time can be determined according to the total number of layers of the calibration sample, and thus, the number of exposed layers to be measured of the calibration sample at this time can be determined. It should be noted that the numerical values in fig. 3 and the corresponding relationship between the thickness and the number of layers represented by the numerical values are only illustrative, and are not intended to limit the total number of layers and the corresponding relationship between the thickness and the number of layers of the calibration sample in the examples of the present application.
In the embodiment of the present application, based on the calibration data, a specific process of constructing the calibration database is as follows: and constructing a calibration database based on the corresponding relation between the calibration data of the different exposed layers to be measured of the calibration sample and the calibration sample exposing the different layers to be measured. Therefore, based on the layer to be measured exposed by the sample to be measured, calibration data corresponding to the layer to be measured exposed by the sample to be measured can be obtained from a calibration database.
In some embodiments, the layer to be measured exposed by the sample to be measured may be determined based on the structural parameter of the sample to be measured, and calibration data corresponding to the layer to be measured exposed by the sample to be measured may be obtained from a calibration database. For example, the target measurement structure of the sample to be measured is a gate structure, and the structural parameter of the sample to be measured is an identifier ID of the gate structure; the layer M to be measured exposed by the sample to be measured can be determined according to the identifier ID of the gate structure, so that calibration data corresponding to the layer M to be measured can be obtained from the calibration database. It should be noted that, in practical application, the structural parameters obtained by the sample to be measured and the calibration sample are the same, so that the layer to be measured exposed by the sample to be measured can be determined based on the structural parameters of the sample to be measured, and calibration data corresponding to the layer to be measured exposed by the sample to be measured is obtained from a calibration database.
And 104, calibrating the OCD measuring equipment according to the calibration data and the OCD measuring data.
In this embodiment, the OCD measuring device is calibrated according to a difference between the calibration data and the OCD measurement data. Here, the calibration data and the OCD measurement data are of the same data type; wherein the calibration data comprises the critical dimension of the calibration sample, and the OCD measurement data comprises the critical dimension of the sample to be measured. The critical dimensions include depth, width, length, ovality diameter, angle, and the like. In the embodiment of the application, the calculation formula of the measurement software in the OCD measurement equipment is modified through the difference value between the critical dimension of the calibration sample and the critical dimension of the sample to be measured, so that the OCD measurement data of the OCD measurement equipment is infinitely close to the calibration data.
In the existing TEM sample preparation process, in order to obtain a TEM sample, a wafer needs to be cut, and only a part of the wafer including a target measurement structure is reserved, so that in order to obtain the TEM sample, a complete wafer needs to be completely destroyed, and the wafer cannot be used for other processes or detections besides TEM detection, so that the utilization rate of the wafer is low. In addition, the TEM sample can only measure a part of the wafer including the target measurement structure, so that the TEM detection data range is small, the detection data is not comprehensive enough, and the detection cost is too high.
In addition, in the existing TEM sample preparation process, the process steps of marking of a target measurement structure, cutting of a wafer, grinding of a TEM sample and the like all need to be manually participated, and along with the improvement of the integration level and the reduction of the characteristic dimension of a semiconductor device, the size of a defect in the wafer is correspondingly reduced, so that the size of a target area caused by the defect is correspondingly reduced, and the difficulty of the TEM sample preparation process is improved; moreover, when a wafer is cut, a TEM sample is ground, and the surface of the TEM sample is finely ground, the stop position is difficult to control, which easily causes the inaccuracy of the size of the finally formed TEM sample, easily causes the deviation between the TEM sample and the target measurement structure, and even fails to completely retain the target measurement structure, resulting in the inaccuracy of the TEM detection result.
Therefore, the embodiment of the application provides a calibration method of OCD measuring equipment, and the embodiment of the application combines a chemical mechanical polishing process and a CDSEM (compact disc-scanning microscope) with a rapid and nondestructive characteristic to perform multiple sampling and measurement on a calibration sample so as to rapidly obtain a large amount of calibration data, and a calibration database is constructed based on the calibration data. And the chemical mechanical polishing process and the CDSEM can process the whole wafer, so that the calibration data of all structures to be measured on the whole wafer can be acquired, all target measurement structures can be accurately measured, and the calibration data is accurate.
The embodiment of the application discloses a method for calibrating optical critical dimension OCD measuring equipment, which comprises the following steps: providing a sample to be measured, wherein the sample to be measured is provided with an exposed layer to be measured; measuring the layer to be measured of the sample to be measured by using OCD measuring equipment to obtain OCD measuring data; determining a layer to be measured of the calibration sample corresponding to the layer to be measured of the sample to be measured from a calibration database, and acquiring corresponding calibration data according to the determined layer to be measured of the calibration sample; wherein the calibration database comprises calibration data corresponding to different layers to be measured of a calibration sample; and calibrating the OCD measuring equipment according to the calibration data and the OCD measuring data. The embodiment of the application provides a calibration method of OCD measuring equipment, which calibrates the OCD measuring equipment through OCD measuring data and calibration data in a calibration data base, so that the measurement accuracy of OCD can be improved through calibration of the OCD measuring equipment.
It should be appreciated that reference throughout this specification to "in an embodiment" or "in some embodiments" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrase "in an embodiment of the present application" or "in some embodiments" in various places throughout this specification are not necessarily all referring to the same embodiments. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not imply any order of execution, and the order of execution of the processes should be determined by their functions and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description, and do not represent the advantages and disadvantages of the embodiments.
The methods disclosed in the several method embodiments provided in the present application may be combined arbitrarily without conflict to obtain new method embodiments.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (9)
1. A calibration method for an Optical Critical Dimension (OCD) measurement device, the method comprising:
providing a sample to be measured, wherein the sample to be measured is provided with an exposed layer to be measured;
measuring the layer to be measured of the sample to be measured by using OCD measuring equipment to obtain OCD measuring data;
determining a layer to be measured of the calibration sample corresponding to the layer to be measured of the sample to be measured from a calibration database, and acquiring corresponding calibration data according to the determined layer to be measured of the calibration sample; wherein the calibration database comprises calibration data corresponding to different layers to be measured of a calibration sample;
calibrating the OCD measuring equipment according to the calibration data and the OCD measuring data;
wherein the calibration data base is constructed by:
providing a calibration sample comprising a plurality of layers to be measured;
processing the calibration sample through a chemical mechanical grinding process to gradually obtain different layers to be measured of the calibration sample;
and measuring the processed calibration sample through CDSEM to obtain calibration data of different layers to be measured.
2. The calibration method of OCD measurement equipment according to claim 1,
the calibration data in the calibration data base was obtained by measuring the layer to be measured of the calibration sample by a cd sem.
3. The method for calibrating an OCD measuring device according to claim 1, wherein the step-by-step obtaining the different layers to be measured of the calibration sample by processing the calibration sample through a chemical mechanical polishing process comprises:
after each grinding of the calibration sample, the current calibration sample was measured by CDSEM to obtain calibration data for calibration samples exposing different layers to be measured.
4. The method for calibrating an OCD measuring device according to claim 1, wherein after the calibration sample is successively ground by a chemical mechanical grinding process, the method further comprises:
obtaining structural parameters of the calibration sample;
and determining the layer to be measured exposed by the calibration sample according to the structural parameters of the calibration sample.
5. The method of calibrating an OCD measurement device of claim 4, wherein said building a calibration database based on said calibration data comprises:
and constructing a calibration database based on the corresponding relation between the calibration data of the different layers to be measured exposed by the calibration sample and the calibration sample exposing the different layers to be measured.
6. The calibration method of OCD measurement equipment according to claim 4,
the structural parameters include at least one of: thickness, weight, identification of the target measurement structure.
7. The calibration method of OCD measurement equipment according to claim 6,
the target measurement structure comprises a target measurement structure positioned in the functional region or a target measurement structure positioned in the cutting path.
8. The method for calibrating an OCD measuring apparatus according to claim 1,
the calibration data and the OCD measurement data are of the same data type;
wherein the calibration data comprises the critical dimension of the calibration sample, and the OCD measurement data comprises the critical dimension of the sample to be measured.
9. The calibration method of OCD measurement equipment according to claim 2,
the calibration sample and the sample to be tested are wafers with the same manufacturing process and structure.
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