IL293769A - Chemical Mechanical Flattening in Shallow Channel Isolation with Low Level Oxide - Google Patents
Chemical Mechanical Flattening in Shallow Channel Isolation with Low Level OxideInfo
- Publication number
- IL293769A IL293769A IL293769A IL29376922A IL293769A IL 293769 A IL293769 A IL 293769A IL 293769 A IL293769 A IL 293769A IL 29376922 A IL29376922 A IL 29376922A IL 293769 A IL293769 A IL 293769A
- Authority
- IL
- Israel
- Prior art keywords
- ceria
- group
- coated
- methyl
- chemical mechanical
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 124
- 239000000126 substance Substances 0.000 title claims description 85
- 238000002955 isolation Methods 0.000 title description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 118
- 239000000203 mixture Substances 0.000 claims description 100
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 88
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 83
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 83
- -1 poly(methacrylic acid) Polymers 0.000 claims description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 44
- 239000002245 particle Substances 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 239000008119 colloidal silica Substances 0.000 claims description 29
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 28
- 150000003839 salts Chemical class 0.000 claims description 28
- 239000003638 chemical reducing agent Substances 0.000 claims description 27
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 17
- 125000000217 alkyl group Chemical group 0.000 claims description 15
- 239000000908 ammonium hydroxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 230000003115 biocidal effect Effects 0.000 claims description 13
- 239000003139 biocide Substances 0.000 claims description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229940100484 5-chloro-2-methyl-4-isothiazolin-3-one Drugs 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004480 active ingredient Substances 0.000 claims description 10
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 claims description 10
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 claims description 10
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 8
- 229920000620 organic polymer Polymers 0.000 claims description 8
- 150000002148 esters Chemical class 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 230000001476 alcoholic effect Effects 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000012153 distilled water Substances 0.000 claims description 5
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical group [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 4
- 239000012312 sodium hydride Substances 0.000 claims description 4
- 229910000104 sodium hydride Inorganic materials 0.000 claims description 4
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical group 0.000 claims 18
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 239000000654 additive Substances 0.000 description 26
- 230000000694 effects Effects 0.000 description 25
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 24
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 12
- 239000002002 slurry Substances 0.000 description 11
- 239000003082 abrasive agent Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 229920002125 Sokalan® Polymers 0.000 description 5
- DZGUJOWBVDZNNF-UHFFFAOYSA-N azanium;2-methylprop-2-enoate Chemical class [NH4+].CC(=C)C([O-])=O DZGUJOWBVDZNNF-UHFFFAOYSA-N 0.000 description 5
- 239000004584 polyacrylic acid Substances 0.000 description 5
- 150000003863 ammonium salts Chemical class 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 3
- 239000012736 aqueous medium Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013074 reference sample Substances 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- LVDKZNITIUWNER-UHFFFAOYSA-N Bronopol Chemical compound OCC(Br)(CO)[N+]([O-])=O LVDKZNITIUWNER-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Chemical group 0.000 description 1
- 239000002184 metal Chemical group 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000867 polyelectrolyte Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- LLLCSBYSPJHDJX-UHFFFAOYSA-M potassium;2-methylprop-2-enoate Chemical class [K+].CC(=C)C([O-])=O LLLCSBYSPJHDJX-UHFFFAOYSA-M 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- SONHXMAHPHADTF-UHFFFAOYSA-M sodium;2-methylprop-2-enoate Chemical class [Na+].CC(=C)C([O-])=O SONHXMAHPHADTF-UHFFFAOYSA-M 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/711,818 US11254839B2 (en) | 2019-12-12 | 2019-12-12 | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
| TW109135359A TWI763076B (zh) | 2019-12-12 | 2020-10-13 | 氧化物槽溝低淺盤效應的淺溝隔離化學機械平坦化研磨組合物、系統及方法 |
| PCT/US2020/056673 WO2021118694A1 (fr) | 2019-12-12 | 2020-10-21 | Planarisation par polissage chimico-mécanique d'isolation par tranchées peu profondes à faible bombage de tranchées d'oxyde |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL293769A true IL293769A (en) | 2022-08-01 |
Family
ID=76330356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL293769A IL293769A (en) | 2019-12-12 | 2020-10-21 | Chemical Mechanical Flattening in Shallow Channel Isolation with Low Level Oxide |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP4073187A4 (fr) |
| JP (1) | JP2023506487A (fr) |
| KR (1) | KR20220113497A (fr) |
| IL (1) | IL293769A (fr) |
| WO (1) | WO2021118694A1 (fr) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020173243A1 (en) * | 2001-04-05 | 2002-11-21 | Costas Wesley D. | Polishing composition having organic polymer particles |
| JP2003313542A (ja) * | 2002-04-22 | 2003-11-06 | Jsr Corp | 化学機械研磨用水系分散体 |
| EP1813656A3 (fr) * | 2006-01-30 | 2009-09-02 | FUJIFILM Corporation | Liquide de polissage de métaux et procédé de polissage mécano-chimique l'utilisant |
| JP2010512657A (ja) * | 2006-12-22 | 2010-04-22 | テクノ セミケム シーオー．， エルティーディー． | ゼオライトを含有する銅化学機械的研磨組成物 |
| WO2016115096A1 (fr) * | 2015-01-12 | 2016-07-21 | Air Products And Chemicals, Inc. | Particules abrasives composites pour composition de planarisation chimico-mécanique et son procédé d'utilisation |
| US10032644B2 (en) * | 2015-06-05 | 2018-07-24 | Versum Materials Us, Llc | Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives |
-
2020
- 2020-10-21 WO PCT/US2020/056673 patent/WO2021118694A1/fr unknown
- 2020-10-21 IL IL293769A patent/IL293769A/en unknown
- 2020-10-21 JP JP2022535706A patent/JP2023506487A/ja active Pending
- 2020-10-21 EP EP20898454.2A patent/EP4073187A4/fr active Pending
- 2020-10-21 KR KR1020227023858A patent/KR20220113497A/ko unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220113497A (ko) | 2022-08-12 |
| JP2023506487A (ja) | 2023-02-16 |
| EP4073187A1 (fr) | 2022-10-19 |
| EP4073187A4 (fr) | 2023-12-13 |
| WO2021118694A1 (fr) | 2021-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL272143B2 (en) | sti chemical mechanical planarization polishing with a low concentration of greening material and a combination of chemical additives | |
| IL262595B2 (en) | Composite particles, a method for refining and using them | |
| TWI432563B (zh) | 化學機械研磨用水系分散體調製用套組，化學機械研磨用水系分散體之調製方法，化學機械研磨用水系分散體及化學機械研磨方法 | |
| IL272585B1 (en) | Mechanical chemical brushing for copper and TSV applications | |
| IL292390A (en) | sti chemical mechanical planarization composites with high oxide removal rates | |
| FR3010650A1 (fr) | Composition de polissage chimico-mecanique a faible densite de defauts | |
| JP6908592B2 (ja) | 研磨用組成物 | |
| IL293769A (en) | Chemical Mechanical Flattening in Shallow Channel Isolation with Low Level Oxide | |
| IL272584B1 (en) | Thin mixture for STI chemical and mechanical brushing | |
| IL298552A (en) | cmp polishing compositions with few oxides for shallow trench insulation applications and methods for their preparation | |
| JP6888744B2 (ja) | スラリ及び研磨方法 | |
| IL270237B2 (en) | Suppressing SiN removal rates and reducing oxide deposition for the STI process | |
| JP2023104945A (ja) | シャロートレンチアイソレーション（ｓｔｉ）の化学機械平坦化研磨（ｃｍｐ）において酸化物／窒化物選択性を高め、酸化物トレンチのディッシングを低く均一化する方法 | |
| IL272142B1 (en) | STI chemical mechanical planarization polishing with adjustable silicon oxide and silicon nitride removal rates | |
| IL293436A (en) | Shallow Channel Isolation Mechanical Chemical Flattening for High Rate Oxide Coating Removal | |
| TWI767355B (zh) | 高氧化物移除速率的淺溝隔離化學機械平坦化組合物、系統及方法 | |
| JP7425660B2 (ja) | 酸化珪素膜用研磨液組成物 | |
| TW201331349A (zh) | 化學機械研磨用水系分散體及化學機械研磨方法 | |
| CN114787304B (zh) | 低氧化物沟槽凹陷的浅沟槽隔离化学机械平面化抛光 | |
| JP2024075071A (ja) | 化学機械研磨用組成物の製造方法 | |
| TW202436536A (zh) | 化學機械研磨用組成物的製造方法 | |
| JP2024536365A (ja) | シャロートレンチアイソレーションのための化学機械平坦化研磨 | |
| JP2012146938A (ja) | 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法 |