IL293769A - Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing - Google Patents
Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishingInfo
- Publication number
- IL293769A IL293769A IL293769A IL29376922A IL293769A IL 293769 A IL293769 A IL 293769A IL 293769 A IL293769 A IL 293769A IL 29376922 A IL29376922 A IL 29376922A IL 293769 A IL293769 A IL 293769A
- Authority
- IL
- Israel
- Prior art keywords
- ceria
- group
- coated
- methyl
- chemical mechanical
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims description 124
- 239000000126 substance Substances 0.000 title claims description 85
- 238000002955 isolation Methods 0.000 title description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 118
- 239000000203 mixture Substances 0.000 claims description 100
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 88
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 83
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 83
- -1 poly(methacrylic acid) Polymers 0.000 claims description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 44
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 44
- 239000002245 particle Substances 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 239000008119 colloidal silica Substances 0.000 claims description 29
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 28
- 150000003839 salts Chemical class 0.000 claims description 28
- 239000003638 chemical reducing agent Substances 0.000 claims description 27
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 24
- 229910052739 hydrogen Inorganic materials 0.000 claims description 23
- 239000001257 hydrogen Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 17
- 125000000217 alkyl group Chemical group 0.000 claims description 15
- 239000000908 ammonium hydroxide Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 230000003115 biocidal effect Effects 0.000 claims description 13
- 239000003139 biocide Substances 0.000 claims description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- 229940100484 5-chloro-2-methyl-4-isothiazolin-3-one Drugs 0.000 claims description 11
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000004480 active ingredient Substances 0.000 claims description 10
- DHNRXBZYEKSXIM-UHFFFAOYSA-N chloromethylisothiazolinone Chemical compound CN1SC(Cl)=CC1=O DHNRXBZYEKSXIM-UHFFFAOYSA-N 0.000 claims description 10
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 claims description 10
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 8
- 229920000620 organic polymer Polymers 0.000 claims description 8
- 150000002148 esters Chemical class 0.000 claims description 7
- 230000002378 acidificating effect Effects 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 230000001476 alcoholic effect Effects 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000012153 distilled water Substances 0.000 claims description 5
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical group [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 150000001412 amines Chemical class 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 4
- 239000012312 sodium hydride Substances 0.000 claims description 4
- 229910000104 sodium hydride Inorganic materials 0.000 claims description 4
- 150000005622 tetraalkylammonium hydroxides Chemical class 0.000 claims description 4
- 239000003002 pH adjusting agent Substances 0.000 claims description 2
- 150000002431 hydrogen Chemical group 0.000 claims 18
- 229940100555 2-methyl-4-isothiazolin-3-one Drugs 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 239000000654 additive Substances 0.000 description 26
- 230000000694 effects Effects 0.000 description 25
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 24
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 12
- 239000002002 slurry Substances 0.000 description 11
- 239000003082 abrasive agent Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical class CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 5
- 229920002125 Sokalan® Polymers 0.000 description 5
- DZGUJOWBVDZNNF-UHFFFAOYSA-N azanium;2-methylprop-2-enoate Chemical class [NH4+].CC(=C)C([O-])=O DZGUJOWBVDZNNF-UHFFFAOYSA-N 0.000 description 5
- 239000004584 polyacrylic acid Substances 0.000 description 5
- 150000003863 ammonium salts Chemical class 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 3
- 239000012736 aqueous medium Substances 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013074 reference sample Substances 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 150000003077 polyols Chemical class 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- LVDKZNITIUWNER-UHFFFAOYSA-N Bronopol Chemical compound OCC(Br)(CO)[N+]([O-])=O LVDKZNITIUWNER-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011246 composite particle Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Chemical group 0.000 description 1
- 239000002184 metal Chemical group 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000867 polyelectrolyte Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- LLLCSBYSPJHDJX-UHFFFAOYSA-M potassium;2-methylprop-2-enoate Chemical class [K+].CC(=C)C([O-])=O LLLCSBYSPJHDJX-UHFFFAOYSA-M 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- SONHXMAHPHADTF-UHFFFAOYSA-M sodium;2-methylprop-2-enoate Chemical class [Na+].CC(=C)C([O-])=O SONHXMAHPHADTF-UHFFFAOYSA-M 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
WO 2021/118694 PCT/US2020/056673 TITLE OF THE INVENTION: LOW OXIDE TRENCH DISHINGSHALLOWTRENCH ISOLATION CHEMICAL MECHANICAL PLANARIZATION POLISHING CROSS REFERENCE TO RELATED PATENT APPLICATIONS [0001]This application claims the benefit of priority to U.S. patent application Serial Number 16/711,818 filed on 12 December 2019, which is entirely incorporated herein by reference.
BACKGROUND OF THE INVENTION id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2"
id="p-2"
[0002]This invention relates to Shallow Trench Isolation (STI) chemical Mechanical Planarization (CMP) polishing compositions. id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3"
id="p-3"
[0003]More specifically, the STI chemical Mechanical Planarization (CMP) polishing compositions use ceria-coated composite particles, such as ceria-coated silica particles as abrasives and poly (methacrylic acid) (PMAA), its derivatives, or its salts with molecular weight ranged from 1,000 to 1,000,000; or combinations thereof as chemical additive for achieving low oxide trenching dishing for Shallow Trench Isolation (STI) process. id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4"
id="p-4"
[0004]In the fabrication of microelectronics devices, an important step involved is polishing, especially surfaces for chemical-mechanical polishing for recovering a selected material and/or planarizing the structure. [0005]For example, a SiN layer is deposited under a SiO2 layer to serve as a polish stop. The role of such polish stop is particularly important in Shallow Trench Isolation (STI) structures. Selectivity is characteristically expressed as the ratio of the oxide polish rate to the nitride polish rate. An example is an increased polishing selectivity rate of silicon dioxide (SiO2) as compared to silicon nitride (SiN). [0006]In the global planarization of patterned STI structures, reducing oxide trench dishing is a key factor to be considered. The lower trench oxide loss will prevent WO 2021/118694 PCT/US2020/056673 electrical current leaking between adjacent transistors. Non-uniform trench oxide loss across die (within Die) will affect transistor performance and device fabrication yields. Severe trench oxide loss (high oxide trench dishing) will cause poor isolation of transistor resulting in device failure. Therefore, it is important to reduce trench oxide loss by reducing oxide trench dishing in STI CMP polishing compositions. id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7"
id="p-7"
[0007]US Patent 5,876,490 discloses the polishing compositions containing abrasive particles and exhibiting normal stress effects. The slurry further contains non- polishing particles resulting in reduced polishing rate at recesses, while the abrasive particles maintain high polish rates at elevations. This leads to improved planarization. More specifically, the slurry comprises cerium oxide particles and polymeric electrolyte, and can be used for Shallow Trench Isolation (STI) polishing applications. [0008]US Patent 6,964,923 teaches the polishing compositions containing cerium oxide particles and polymeric electrolyte for Shallow Trench Isolation (STI) polishing applications. Polymeric electrolyte being used includes the salts of polyacrylic acid, similar as those in US Patent 5,876,490. Ceria, alumina, silica & zirconia are used as abrasives. Molecular weight for such listed polyelectrolyte is from 300 to 20,000, but in overall, <100,000. id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9"
id="p-9"
[0009]US Patent 6,616,514 discloses a chemical mechanical polishing slurry for use in removing a first substance from a surface of an article in preference to silicon nitride by chemical mechanical polishing. The chemical mechanical polishing slurry according to the invention includes an abrasive, an aqueous medium, and an organic polyol that does not dissociate protons, said organic polyol including a compound having at least three hydroxyl groups that are not dissociable in the aqueous medium, or a polymer formed from at least one monomer having at least three hydroxyl groups that are not dissociable in the aqueous medium. id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10"
id="p-10"
[0010]However, those prior disclosed Shallow Trench Isolation (STI) polishing compositions did not address the importance of oxide trench dishing reducing. id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11"
id="p-11"
[0011]It should be readily apparent from the foregoing that there remains a need within the art for compositions, methods and systems of chemical mechanical polishing that can afford the reduced oxide trench dishing and improved over polishing window stability in a STI chemical and mechanical polishing (CMP) process, in addition to high removal rate of silicon dioxide as well as high selectivity for silicon dioxide to silicon nitride.
WO 2021/118694 PCT/US2020/056673 BRIEF SUMMARY OF THE INVENTION id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12"
id="p-12"
[0012]The present invention discloses Chemical mechanical polishing (CMP) compositions that provide reduced oxide trench dishing and thus improved over polishing window stability for Shallow Trench Isolation (STI) CMP applications at wide pH range including acidic, neutral and alkaline pH conditions. id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13"
id="p-13"
[0013]The CMP compositions also provide good oxide film removal rates, suppressed SiN film removal rates and tunable higher SiO2: SiN selectivity. id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14"
id="p-14"
[0014]The disclosed chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) CMP applications have a unique combination of using ceria-coated inorganic oxide abrasive particles and an oxide trench dishing reducing additives including poly(methacrylic acids) (PMAA), its derivatives, its salts with molecular weight ranging from 1000 to 1,000,000; or combinations thereof. id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15"
id="p-15"
[0015]In one aspect, there is provided a STI CMP polishing composition comprises: ceria-coated inorganic oxide particles;oxide trenching dishing reducer selected from the group consisting of organic polymer acid, its ester derivatives, its salts, and combinations thereof; water based solvent; andoptionallybiocide; andpH adjuster; whereinthe composition has a pH of 2 to 12, 3 to 10, 3.5 to 9, or 4 to 7; andmolecular weight of oxide trenching dishing reducer is from 1,000 to 1,000,000, preferably 1,200 to 100,000, more preferably 1,500 to 15,000. [0016]The ceria-coated inorganic oxide particles include, but are not limited to, ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated inorganic oxide particles. The preferred ceria-coated inorganic oxide particles are ceria-coated colloidal silica.
WO 2021/118694 PCT/US2020/056673 id="p-17" id="p-17" id="p-17" id="p-17" id="p-17" id="p-17"
id="p-17"
[0017]The water-soluble based solvent includes but is not limited to deionized (DI) water, distilled water, and alcoholic organic water-based solvents. id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18"
id="p-18"
[0018]The organic polymer acid, its ester derivatives, or its salts used as oxide trench dishing reducers have a general molecular structure as shown below: id="p-19" id="p-19" id="p-19" id="p-19" id="p-19" id="p-19"
id="p-19"
[0019]Where R1, R2, and R4 each can be selected independently from the group consisting of hydrogen, alkyl groups; R4 can also be metal ions or ammonium ions, such as Na+, K+ or NH4+; and R3 is selected from alkyl groups. Where the alkyl groups are CmH2m+1 m is from 1 to 10, 1 to 6, 1 to 4, or 1 to 2; such as methyl, ethyl groups. id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20"
id="p-20"
[0020]n is chosen to give the molecular weights of the oxide trenching dishing reducer in the range from 1,000 to 1,000,000; preferably 1,200 to 100,000; and more preferably 1,500 to 15,000. id="p-21" id="p-21" id="p-21" id="p-21" id="p-21" id="p-21"
id="p-21"
[0021]When R1, R2, and R4 are hydrogen atoms and R3 is methyl group, themolecular structure of poly(methacrylic acid) is shown below: (a) WO 2021/118694 PCT/US2020/056673 id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22"
id="p-22"
[0022]When R1 and R2 are hydrogen atoms, R3 is methyl group, and R4 is ammonium ion or a metal such as sodium ion, or potassium ion; then the molecular structure of poly (methacrylic acid) salts is shown below: id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23"
id="p-23"
[0023]The poly (methacrylic acid) salts include but are not limited to poly (methacrylic acid) ammonium salts, poly (methacrylic acid) sodium salts, poly(methacrylic acid) potassium salts, or combinations thereof. The preferred polyacrylic acid salt is poly (methacrylic acid) ammonium salt. id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24"
id="p-24"
[0024]When R1 and R2 are hydrogen atoms, R3 and R4 are methyl group, the molecular structure of poly (methyl methacrylate) (PMMA) is shown below: id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25"
id="p-25"
[0025]When R1 and R2 are hydrogen atoms, R3 is methyl group, and R4 is ethyl group, the molecular structure of poly (ethyl methacrylate) (PEMA) is shown below: WO 2021/118694 PCT/US2020/056673 id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26"
id="p-26"
[0026]When R1 and R4 are hydrogen atoms, R2 and R3 are methyl group, themolecular structure of 2-methyl-poly (methacrylic acid) is shown below: id="p-27" id="p-27" id="p-27" id="p-27" id="p-27" id="p-27"
id="p-27"
[0027]In another aspect, there is provided a method of chemical mechanical polishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process. id="p-28" id="p-28" id="p-28" id="p-28" id="p-28" id="p-28"
id="p-28"
[0028]In another aspect, there is provided a system of chemical mechanicalpolishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process.
WO 2021/118694 PCT/US2020/056673 id="p-29" id="p-29" id="p-29" id="p-29" id="p-29" id="p-29"
id="p-29"
[0029]The polished silicon oxide films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on oxide films. id="p-30" id="p-30" id="p-30" id="p-30" id="p-30" id="p-30"
id="p-30"
[0030]The substrate disclosed above can further comprises a silicon nitride surface. The removal selectivity of SiO2: SiN is greater than 10, preferably greater than 15.
DETAILED DESCRIPTION OF THE INVENTION id="p-31" id="p-31" id="p-31" id="p-31" id="p-31" id="p-31"
id="p-31"
[0031]This invention relates to the Chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) CMP applications generally using the ceria-coated inorganic oxide particles as abrasives and poly(methacrylic acids)(PMAA), its derivatives, its salts, and combinations thereof as the suitable chemical additives which provide the benefits of achieving high oxide film removal rates, low SiN film removal rates, high and tunable Oxide: SiN selectivity, and more importantly, significantly reducing oxide trench dishing and improving over polishing window stability. id="p-32" id="p-32" id="p-32" id="p-32" id="p-32" id="p-32"
id="p-32"
[0032]In the global planarization of patterned STI structures, reducing oxide trench dishing is a key factor to be considered. The lower trench oxide loss will prevent electrical current leaking between adjacent transistors. Non-uniform trench oxide loss across die (within Die) will affect transistor performance and device fabrication yields. Severe trench oxide loss (high oxide trench dishing) will cause poor isolation of transistor resulting in device failure. Therefore, it is important to reduce trench oxide loss by reducing oxide trench dishing in STI CMP polishing compositions. id="p-33" id="p-33" id="p-33" id="p-33" id="p-33" id="p-33"
id="p-33"
[0033]In one aspect, there is provided a STI CMP polishing composition comprises: ceria-coated inorganic oxide particles;oxide trenching dishing reducer selected from organic polymer acid, its ester derivatives, its salts, and combinations thereof; water based solvent; and optionally biocide; and pH adjuster; WO 2021/118694 PCT/US2020/056673 wherein the composition has a pH of 2 to 12, 3 to 10, 3.5 to 9, or 4 to 8;the molecular weight of oxide trenching dishing reducer is in the ranges of 1,000 to 1,000,000, preferably 1,200 to 100,000, more preferably 1,500 to 15,000. [0034]The oxide trenching dishing reducer also includes 2-alkyl group substituted derivatives of the organic polymer acid, where 2-alkyl group includes methyl, ethyl, propyl, butyl, pentyl or hexyl group. id="p-35" id="p-35" id="p-35" id="p-35" id="p-35" id="p-35"
id="p-35"
[0035]The ceria-coated inorganic oxide particles include, but are not limited to, ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia, or any other ceria-coated inorganic oxide particles. id="p-36" id="p-36" id="p-36" id="p-36" id="p-36" id="p-36"
id="p-36"
[0036]The preferred ceria-coated inorganic oxide particles are ceria-coated colloidal silica particles. id="p-37" id="p-37" id="p-37" id="p-37" id="p-37" id="p-37"
id="p-37"
[0037]The particle sizes measured by a known method, such as Dynamic Light Scattering, of these ceria-coated inorganic oxide particles in the disclosed invention herein are ranged from 10nm to 1,000nm, the preferred mean particle sized are ranged from 20nm to 500nm, the more preferred mean particle sizes are ranged from 50nm to 250nm. id="p-38" id="p-38" id="p-38" id="p-38" id="p-38" id="p-38"
id="p-38"
[0038]The concentrations of these ceria-coated inorganic oxide particles range from 0.01 wt.% to 20 wt.%, the preferred concentrations range from 0.05 wt.% to wt.%, the more preferred concentrations range from 0.1 wt.% to 5 wt.%. id="p-39" id="p-39" id="p-39" id="p-39" id="p-39" id="p-39"
id="p-39"
[0039]The water-based solvent includes but is not limited to deionized (DI) water, distilled water, and alcoholic organic water-based solvents. id="p-40" id="p-40" id="p-40" id="p-40" id="p-40" id="p-40"
id="p-40"
[0040]The preferred water-based solvent is DI water. id="p-41" id="p-41" id="p-41" id="p-41" id="p-41" id="p-41"
id="p-41"
[0041]The STI CMP slurry may contain biocide ranging from 0.0001 wt.% to 0.wt.%; preferably from 0.0005 wt.% to 0.025 wt.%, and more preferably from 0.001 wt.% to 0.01 wt.%. id="p-42" id="p-42" id="p-42" id="p-42" id="p-42" id="p-42"
id="p-42"
[0042]The biocide includes, but is not limited to, Kathon™, Kathon™ CG/ICP II, from Dupont/Dow Chemical Co. Bioban from Dupont/Dow Chemical Co. They have active ingredients of 5-chloro-2-methyl-4-isothiazolin-3-one and 2-methyl-4-isothiazolin- 3-one.
WO 2021/118694 PCT/US2020/056673 id="p-43" id="p-43" id="p-43" id="p-43" id="p-43" id="p-43"
id="p-43"
[0043]The STI CMP slurry may contain a pH adjustor. id="p-44" id="p-44" id="p-44" id="p-44" id="p-44" id="p-44"
id="p-44"
[0044]An acidic or basic pH adjustor can be used to adjust the STI polishing compositions to the optimized pH value. id="p-45" id="p-45" id="p-45" id="p-45" id="p-45" id="p-45"
id="p-45"
[0045]The acidic pH adjustors include, but are not limited to nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, other inorganic or organic acids, and mixtures thereof. id="p-46" id="p-46" id="p-46" id="p-46" id="p-46" id="p-46"
id="p-46"
[0046]pH adjustors also include the basic pH adjustors, such as sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and other chemical reagents that can be used to adjust pH towards the more alkaline direction. id="p-47" id="p-47" id="p-47" id="p-47" id="p-47" id="p-47"
id="p-47"
[0047]The STI CMP slurry contains 0 wt.% to 1 wt.%; preferably 0.01 wt.% to 0.wt.%; more preferably 0.1 wt.% to 0.25 wt.% of a pH adjustor. id="p-48" id="p-48" id="p-48" id="p-48" id="p-48" id="p-48"
id="p-48"
[0048]The organic polymer acid, its ester derivatives, its 2-alkyl group substituted derivatives (2-alkyl group is selected from methyl, ethyl, propyl, butyl, pentyl or hexyl group), or its salts used as oxide trench dishing reducers have a general molecular structure as shown below: id="p-49" id="p-49" id="p-49" id="p-49" id="p-49" id="p-49"
id="p-49"
[0049]Where R1, R2, and R4 can be selected independently from the group consisting of hydrogen, alkyl groups; R4 can also be metal ions or ammonium ions, such as Na+, K+ or NH4+; and R3 is selected from alkyl groups. Where the alkyl groups are CmH2m+m is from 1 to 10, 1 to 6, 1 to 4, or 1 to 2; such as methyl, ethyl groups. id="p-50" id="p-50" id="p-50" id="p-50" id="p-50" id="p-50"
id="p-50"
[0050]n is chosen to give the molecular weights in the range from 1,000 to 1,000,000; preferably 1,200 to 100,000; and more preferably 1,500 to 15,000.
WO 2021/118694 PCT/US2020/056673 id="p-51" id="p-51" id="p-51" id="p-51" id="p-51" id="p-51"
id="p-51"
[0051] When R1, R2, and R4 are hydrogen atoms and R3 is methyl group,molecular structure (a) of Poly(methacrylic acid) is shown below: (a) id="p-52" id="p-52" id="p-52" id="p-52" id="p-52" id="p-52"
id="p-52"
[0052]When R1 and R2 are hydrogen atoms, R3 is methyl group, and R4 is ametal ion, then the molecular structure (b) of poly(methacrylic acid) salt is shown below: id="p-53" id="p-53" id="p-53" id="p-53" id="p-53" id="p-53"
id="p-53"
[0053]The poly(methacrylic acid) salts include but are not limited to poly (methacrylic acid) ammonium salts, poly(methacrylic acid) sodium salts, poly (methacrylic acid) potassium salts, or combinations thereof. The preferred poly(methacrylic acid) salt is poly(methacrylic acid) ammonium salt. id="p-54" id="p-54" id="p-54" id="p-54" id="p-54" id="p-54"
id="p-54"
[0054]When R1 and R2 are hydrogen atoms, R3 and R4 are methyl group, the molecular structure of poly (methyl methacrylate) (PMMA) is shown below: WO 2021/118694 PCT/US2020/056673 id="p-55" id="p-55" id="p-55" id="p-55" id="p-55" id="p-55"
id="p-55"
[0055]When R1 and R2 are hydrogen atoms, R3 is methyl group, and R4 is ethyl group, the molecular structure of poly (ethyl methacrylate) (PEMA) is shown below: id="p-56" id="p-56" id="p-56" id="p-56" id="p-56" id="p-56"
id="p-56"
[0056] When R1 and R4 are hydrogen atoms, R2 and R3 are methyl group, the molecular structure of 2-methyl-poly (methacrylic acid) is shown below: WO 2021/118694 PCT/US2020/056673 id="p-57" id="p-57" id="p-57" id="p-57" id="p-57" id="p-57"
id="p-57"
[0057]The STI CMP slurry contains 0.001 wt.% to 2.0% wt.%, preferably 0.0wt.% to 0.75 wt.%, and preferable 0.01 wt.% to 0.5 wt.% of the oxide trenching dishing reducer. id="p-58" id="p-58" id="p-58" id="p-58" id="p-58" id="p-58"
id="p-58"
[0058]In another aspect, there is provided a method of chemical mechanical polishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process. id="p-59" id="p-59" id="p-59" id="p-59" id="p-59" id="p-59"
id="p-59"
[0059]In another aspect, there is provided a system of chemical mechanical polishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process. id="p-60" id="p-60" id="p-60" id="p-60" id="p-60" id="p-60"
id="p-60"
[0060]The polished oxide films can be Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on oxide films. id="p-61" id="p-61" id="p-61" id="p-61" id="p-61" id="p-61"
id="p-61"
[0061]The substrate disclosed above can further comprises a silicon nitride surface. The removal selectivity of SiO2: SiN is greater than 10, preferably greater than 20, and more preferably greater than 30. id="p-62" id="p-62" id="p-62" id="p-62" id="p-62" id="p-62"
id="p-62"
[0062]In another aspect, there is provided a method of chemical mechanical polishing (CMP) a substrate having at least one surface comprising silicon dioxide using the chemical mechanical polishing (CMP) composition described above in Shallow Trench Isolation (STI) process. The polished oxide films can be CVD oxide, PECVD oxide, High density oxide, or Spin on oxide films.
WO 2021/118694 PCT/US2020/056673 id="p-63" id="p-63" id="p-63" id="p-63" id="p-63" id="p-63"
id="p-63"
[0063]The following non-limiting examples are presented to further illustrate the present invention.
CMP Methodology id="p-64" id="p-64" id="p-64" id="p-64" id="p-64" id="p-64"
id="p-64"
[0064]In the examples presented below, CMP experiments were run using theprocedures and experimental conditions given below.
WO 2021/118694 PCT/US2020/056673 GLOSSARY COMPONENTS id="p-65" id="p-65" id="p-65" id="p-65" id="p-65" id="p-65"
id="p-65"
[0065]Ceria-coated Silica: used as abrasive having a particle size of approximately 100 nanometers (nm); such ceria-coated silica particles can have a particle size of ranged from approximately 20 nanometers (nm) to 500 nanometers (nm). id="p-66" id="p-66" id="p-66" id="p-66" id="p-66" id="p-66"
id="p-66"
[0066]Ceria-coated Silica particles (with varied sizes) were supplied by JGC Inc. in Japan. id="p-67" id="p-67" id="p-67" id="p-67" id="p-67" id="p-67"
id="p-67"
[0067]Chemical additives, poly(methacrylic acid) or salts were supplied by Sigma- Aldrich, St. Louis, MO id="p-68" id="p-68" id="p-68" id="p-68" id="p-68" id="p-68"
id="p-68"
[0068]Chemical additives, polyacrylic acid ammonium salts(PAAAS) were supplied by Kao Chemicals Inc. in Japan. id="p-69" id="p-69" id="p-69" id="p-69" id="p-69" id="p-69"
id="p-69"
[0069]TEOS: tetraethyl orthosilicate id="p-70" id="p-70" id="p-70" id="p-70" id="p-70" id="p-70"
id="p-70"
[0070]Polishing Pad: Polishing pad, IC1010 and other pads were used duringCMP, supplied by DOW, Inc.
PARAMETERS General id="p-71" id="p-71" id="p-71" id="p-71" id="p-71" id="p-71"
id="p-71"
[0071]A or A: angstrom(s) - a unit of length id="p-72" id="p-72" id="p-72" id="p-72" id="p-72" id="p-72"
id="p-72"
[0072]BP: back pressure, in psi units id="p-73" id="p-73" id="p-73" id="p-73" id="p-73" id="p-73"
id="p-73"
[0073]CMP: chemical mechanical planarization = chemical mechanical polishing id="p-74" id="p-74" id="p-74" id="p-74" id="p-74" id="p-74"
id="p-74"
[0074]CS: carrier speed id="p-75" id="p-75" id="p-75" id="p-75" id="p-75" id="p-75"
id="p-75"
[0075]DF: Down force: pressure applied during CMP, units psi id="p-76" id="p-76" id="p-76" id="p-76" id="p-76" id="p-76"
id="p-76"
[0076]min: minute(s) id="p-77" id="p-77" id="p-77" id="p-77" id="p-77" id="p-77"
id="p-77"
[0077]ml: milliliter(s) id="p-78" id="p-78" id="p-78" id="p-78" id="p-78" id="p-78"
id="p-78"
[0078]mV: millivolt(s) id="p-79" id="p-79" id="p-79" id="p-79" id="p-79" id="p-79"
id="p-79"
[0079]psi: pounds per square inch id="p-80" id="p-80" id="p-80" id="p-80" id="p-80" id="p-80"
id="p-80"
[0080]PS: platen rotational speed of polishing tool, in rpm (revolution(s) per minute) id="p-81" id="p-81" id="p-81" id="p-81" id="p-81" id="p-81"
id="p-81"
[0081]SF: slurry flow, ml/min WO 2021/118694 PCT/US2020/056673 id="p-82" id="p-82" id="p-82" id="p-82" id="p-82" id="p-82"
id="p-82"
[0082]Wt. %: weight percentage (of a listed component) id="p-83" id="p-83" id="p-83" id="p-83" id="p-83" id="p-83"
id="p-83"
[0083]TEOS: SiN Selectivity: (removal rate of TEOS)/ (removal rate of SiN) id="p-84" id="p-84" id="p-84" id="p-84" id="p-84" id="p-84"
id="p-84"
[0084]HDP: high density plasma deposited TEOS id="p-85" id="p-85" id="p-85" id="p-85" id="p-85" id="p-85"
id="p-85"
[0085]TEOS or HDP Removal Rates: Measured TEOS or HDP removal rate at a given down pressure. The down pressure of the CMP tool was 2.0, 3.0 or 4.0 psi in the examples listed below. id="p-86" id="p-86" id="p-86" id="p-86" id="p-86" id="p-86"
id="p-86"
[0086]SiN Removal Rates: Measured SiN removal rate at a given down pressure. The down pressure of the CMP tool was 3.0 psi in the examples listed.
Metrology id="p-87" id="p-87" id="p-87" id="p-87" id="p-87" id="p-87"
id="p-87"
[0087]Films were measured with a ResMap CDE, model 168, manufactured by Creative Design Engineering, Inc, 20565 Alves Dr., Cupertino, CA, 95014. The ResMap tool is a four-point probe sheet resistance tool. Forty-nine-point diameter scan at 5mm edge exclusion for film was taken.
CMP Tool id="p-88" id="p-88" id="p-88" id="p-88" id="p-88" id="p-88"
id="p-88"
[0088]The CMP tool that was used is a 200mm Mirra, or 300mm Reflexion manufactured by Applied Materials, 3050 Boweres Avenue, Santa Clara, California, 95054. An IC1000 pad supplied by DOW, Inc, 451 Bellevue Rd., Newark, DE 197was used on platen 1 for blanket and pattern wafer studies. id="p-89" id="p-89" id="p-89" id="p-89" id="p-89" id="p-89"
id="p-89"
[0089]The IC1010 pad or other pad was broken in by conditioning the pad for 18 mins. At 1 lbs. down force on the conditioner. To qualify the tool settings and the pad break-in two tungsten monitors and two TEOS monitors were polished with Versum® STI23slurry, supplied by Versum Materials Inc. at baseline conditions.
Wafers id="p-90" id="p-90" id="p-90" id="p-90" id="p-90" id="p-90"
id="p-90"
[0090]Polishing experiments were conducted using PECVD or LECVD or HD TEOS wafers. These blanket wafers were purchased from Silicon Valley Microelectronics, 2985 Kifer Rd., Santa Clara, CA 95051.
WO 2021/118694 PCT/US2020/056673 Polishing Experiments id="p-91" id="p-91" id="p-91" id="p-91" id="p-91" id="p-91"
id="p-91"
[0091]In blanket wafer studies, oxide blanket wafers, and SiN blanket wafers were polished at baseline conditions. The tool baseline conditions were: table speed; 87 rpm, head speed: 93 rpm, membrane pressure; 3.0 psi, slurry flow; 200 ml/min. id="p-92" id="p-92" id="p-92" id="p-92" id="p-92" id="p-92"
id="p-92"
[0092]The slurry was used in polishing experiments on patterned wafers (MIT860) which were supplied by SWK Associates, Inc. 2920 Scott Blvd. Santa Clara, CA 95054). These wafers were measured on the Veeco VX300 profiler/AFM instrument. The 2 or different sized pitch structures were used for oxide dishing measurement. The wafer was measured at center, middle, and edge die positions. id="p-93" id="p-93" id="p-93" id="p-93" id="p-93" id="p-93"
id="p-93"
[0093]TEOS: SiN Selectivity: (removal rate of TEOS)/ (removal rate of SiN) obtained from the STI CMP polishing compositions were tunable.
Working Examples id="p-94" id="p-94" id="p-94" id="p-94" id="p-94" id="p-94"
id="p-94"
[0094]In the following working examples, a STI polishing composition comprising 0.2 wt.% cerium-coated silica, a biocide ranging from 0.0001 wt.% to 0.05 wt.%, and deionized water was prepared as base or reference composition. id="p-95" id="p-95" id="p-95" id="p-95" id="p-95" id="p-95"
id="p-95"
[0095]The STI CMP polishing compositions comprised additional chemical additives, such poly (methacrylic acid) (PMAA) with structure (a) with different molecular weights and/or polyacrylic acid ammonium salt (PAAAS) with around 3000 molecular weights. id="p-96" id="p-96" id="p-96" id="p-96" id="p-96" id="p-96"
id="p-96"
[0096]pH of the compositions was adjusted by using nitric acid or ammonium hydroxide.
Example 1 id="p-97" id="p-97" id="p-97" id="p-97" id="p-97" id="p-97"
id="p-97"
[0097]In Example 1, the polishing compositions were prepared as shown in Table 1. pH was around 5.35 for the compositions. id="p-98" id="p-98" id="p-98" id="p-98" id="p-98" id="p-98"
id="p-98"
[0098]The chemical additives poly(methacrylic acid) (PMAA) or its deionized form (deionized PMAA) having MW around 5,000 were used at 0.10 wt.%, respectively as shown in Table 1.
WO 2021/118694 PCT/US2020/056673 id="p-99" id="p-99" id="p-99" id="p-99" id="p-99" id="p-99"
id="p-99"
[0099]The removal rates (RR at A/min) for different films were tested. The results were shown in Table 1. id="p-100" id="p-100" id="p-100" id="p-100" id="p-100" id="p-100"
id="p-100"
[00100]The effects of PMAA having 5,000 molecular weights or its deionized form on the film removal rates and selectivity were observed.
Table 1. Effects of Additives on Film RRs & Selectivity CompositionsTEOS RR (A/min.)HDP RR (A/min.)SiN RR (A/min.)TEOS: SiN Selectivity0.2% Ceria-Coated Silica3436 2929 337 10:1+ 0.1xPMAA 1345 2220 157 9:1+ 0.1x Deionized PMAA1239 2063 137 9:1 id="p-101" id="p-101" id="p-101" id="p-101" id="p-101" id="p-101"
id="p-101"
[00101]As shown in Table 1, the addition of the chemical additives of poly (methacrylic acid)(PMAA), or its deionized form, reduced the removal rates for all tested films. Similar TEOS: SiN film polishing selectivity were obtained.
Example 2 id="p-102" id="p-102" id="p-102" id="p-102" id="p-102" id="p-102"
id="p-102"
[00102]In Example 2, the polishing compositions were prepared as shown in Table2. The CMP polishing compositions have pH values at 5.35. id="p-103" id="p-103" id="p-103" id="p-103" id="p-103" id="p-103"
id="p-103"
[00103]The chemical additives poly(methacrylic acid) having molecular weights around 5,000 was used at 0.10 wt.%. id="p-104" id="p-104" id="p-104" id="p-104" id="p-104" id="p-104"
id="p-104"
[00104]The oxide trenching 100pm and 200pm dishing vs over polishing amounts were tested and the results were shown in Table 2.
Table 2. Effects of PMAA on Oxide Trench Dishing vs OP Amt.
CompositionsOver Polishing Amt. (A) P100pm Trench Dishing Rate(A/min.) P200pm Trench Dishing Rate(A/min.)0.2% Ceria-Coated Silica3006A/60sec. 985 11656012A/120sec. 913 1132 + 0.1xPMAA2377A/60sec. 224 3274754A/120sec. 295 388 WO 2021/118694 PCT/US2020/056673 id="p-105" id="p-105" id="p-105" id="p-105" id="p-105" id="p-105"
id="p-105"
[00105]As the results shown in Table 2, the addition of 0.1 wt.% PMAA with 5,0MW into the reference STI CMP polishing composition having 0.2 wt. % ceria-coated silica abrasives significantly reduced oxide trench dishing, the oxide trench dishing reduction was by > 100% for both different sized oxide trench features. id="p-106" id="p-106" id="p-106" id="p-106" id="p-106" id="p-106"
id="p-106"
[00106]Dishing was significantly reduced with the use of MW 5,000 PMAA as oxide trench dishing reducer vs different over polishing thickness of oxide films.
Example 3 id="p-107" id="p-107" id="p-107" id="p-107" id="p-107" id="p-107"
id="p-107"
[00107]In example 3, the polishing compositions were prepared as shown in Table 3.
In the listed polishing compositions, 0.2 wt.% ceria-coated silica was used as abrasives in reference and all three tested samples. pH was around 5.35 for each of these compositions. id="p-108" id="p-108" id="p-108" id="p-108" id="p-108" id="p-108"
id="p-108"
[00108]The deionized PMAA with molecular weight 5,000 was used at 0.05 wt.%, 0.wt.% , and 0.15 wt.% respectively. id="p-109" id="p-109" id="p-109" id="p-109" id="p-109" id="p-109"
id="p-109"
[00109]Removal rates from those polishing compositions were tested and shown in Table 3.
Table 3. Film RRs from Polishing Compositions having PMAA at Different% CompositionsTEOS RR (A/min.)HDP RR (A/min.)SiN RR (A/min.)TEOS: SiN Selectivity0.2% Ceria-Coated Silica3436 2929 337 10:1+ 0.05x PMAA 1387 2083 111 12:1+ 0.1xPMAA 1583 2164 130 12:1+ 0.15x PMAA 1514 2027 116 13:1 id="p-110" id="p-110" id="p-110" id="p-110" id="p-110" id="p-110"
id="p-110"
[00110]As the results shown in Table 3, all three types of film removal rates were reduced when different concentrations of PMAA was used as chemical additive in the polishing compositions, but the concentration changes of PMAA with MW 5,000 within the tested range had no significant effects on TEOS, HDP, SiN film removal rates, and using PMAA as chemical additive in the polishing compositions increased TEOS: SiN selectivity slightly.
WO 2021/118694 PCT/US2020/056673 id="p-111" id="p-111" id="p-111" id="p-111" id="p-111" id="p-111"
id="p-111"
[00111]The effects of PMAA concentrations on various sized oxide trench loss rates were listed in Table 4.
Table 4. Effects of PMAA% on Oxide Trench Loss Rates CompositionsP 100pm Trench Loss Rate (A/sec.)P200pm Trench Loss Rate (A/sec.) 0.2% Ceria-Coated Silica 19.6 21.1+ 0.05x PMAA 6.4 4.8+ 0.1xPMAA 2.8 3.7+ 0.15x PMAA 2.6 3.9 id="p-112" id="p-112" id="p-112" id="p-112" id="p-112" id="p-112"
id="p-112"
[00112]As showed in Table 4, the oxide trench loss rates were significantly reducedwhen PMAA was used at different wt.% concentrations on 100pm and 200pm oxide trench features while comparing with the polishing composition only using 0.2 wt.% ceria-coated silica reference sample. id="p-113" id="p-113" id="p-113" id="p-113" id="p-113" id="p-113"
id="p-113"
[00113]The results shown in Table 4 also shown that when PMAA concentrations were used at 0.1 wt.% or at 0.15 wt.%, significant oxide trench loss rates were obtained while comparing the polishing composition used 0.05 wt.% PMAA as chemical additive. id="p-114" id="p-114" id="p-114" id="p-114" id="p-114" id="p-114"
id="p-114"
[00114]The effects of PMAA concentrations on various sized oxide trench dishing rates were listed in Table 5.
Table 5. Effects of PMAA% on Oxide Trench Dishing Rates CompositionsP100um Trench Dishing Rate (A/sec.)P200pm Trench Dishing Rate (A/sec.) 0.2% Ceria-Coated Silica 6.3 8.9+ 0.05x PMAA 2.6 3.8+ 0.1xPMAA 1.9 2.6+ 0.15x PMAA 1.3 3.0 id="p-115" id="p-115" id="p-115" id="p-115" id="p-115" id="p-115"
id="p-115"
[00115]As the results shown in Table 5, the oxide trench dishing rates were reduced significantly when PMAA was used at 0.05 wt.% , 0.1 wt.% or 0.15 wt.% on 100pm and 200pm oxide trench features while comparing the dishing rates on these two oxide WO 2021/118694 PCT/US2020/056673 trench features obtained with the polishing composition only using 0.2 wt.% ceria- coated silica abrasive based polishing composition.
Example 4 id="p-116" id="p-116" id="p-116" id="p-116" id="p-116" id="p-116"
id="p-116"
[00116]In example 4, the effects of pH conditions on film removal rates, oxide trenching loss rates, and oxide trench dishing rates were tested for compositions using 0.1 wt. % PMAA having 5,000 MW and 0.2 wt.% ceria-coated silica as abrasives. id="p-117" id="p-117" id="p-117" id="p-117" id="p-117" id="p-117"
id="p-117"
[00117]The results of the effects of pH on Film were listed in Table 6.
Table 6. Effects of pH on Film RR 0.2% Ceria-CoatedSilica+ 0.1% PMAATEOS RR (A/min.)HDP RR (A/min.)SiN RR (A/min.)TEOS: SiN SelectivitypH 5.35 1583 2164 130 12:1pH 6 2125 2476 128 17:1pH 8 2037 1930 107 19:1 id="p-118" id="p-118" id="p-118" id="p-118" id="p-118" id="p-118"
id="p-118"
[00118]As the results shown in Table 6, the removal rates for TEOS film were increased as pH increased from 5.35 to 6 or from 5.35 to 8. The HDP film removal rate was increased as pH increased from 5.35 to 6, then, slightly reduced as pH increased from 5.35 to 8. The TEOS: SiN selectivity were increased as pH increased from 5.35 to 6, and 8 respectively. id="p-119" id="p-119" id="p-119" id="p-119" id="p-119" id="p-119"
id="p-119"
[00119]The effects of pH conditions of the polishing compositions on various sized oxide trench loss rates were listed in Table 7.
Table 7. Effects of pH Conditions on Oxide Trench Loss Rates 0.2% Ceria-Coated Silica + 0.1% PMAAP100um Trench Loss Rate (A/sec.)P200pm Trench Loss Rate (A/sec.) pH 5.35 2.8 3.7pH 6 4.3 5.8pH 8 18.4 19.5 WO 2021/118694 PCT/US2020/056673 id="p-120" id="p-120" id="p-120" id="p-120" id="p-120" id="p-120"
id="p-120"
[00120]The effects of pH conditions on various sized oxide trench dishing rates were listed in Table 8.
Table 8. Effects of pH Conditions on Oxide Trench Dishing Rates 0.2% Ceria-Coated Silica + 0.1% PMAAP100um Trench Dishing Rate (A/sec.)P200pm Trench Dishing Rate (A/sec.) pH 5.35 1.9 2.6pH 6 3.1 4.3pH 8 7.8 9.5 [0001]As showed in Table 7, in overall, the composition at pH 5.35 showed thelowest oxide trench loss rates across all tested oxide trench features. id="p-2" id="p-2" id="p-2" id="p-2" id="p-2" id="p-2"
id="p-2"
[0002]As showed in Table 8, in overall, the composition at pH 5.35 showed the lowest oxide trench dishing rates across all tested oxide trench features.
Example 5 id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3"
id="p-3"
[0003]In example 5, the tests were performed with PMAA having different MW: 5,000,15,000 and 100,000. The compositions comprised 0.1 wt. % PMAA and 0.2 wt.% ceria- coated silica as abrasives. pH of the compositions was at 5.35. id="p-4" id="p-4" id="p-4" id="p-4" id="p-4" id="p-4"
id="p-4"
[0004]The results from different molecular weights of PMAA or poly (methacrylic acid) ammonium salts (PMAAAM) on the film removal rates and TEOS: SiN selectivitywere listed in Table 9. on Film RR & TEOS: SiN SelectivityTable 9. Effects of Different MW of PMAA or Its Salt CompositionsTEOS RR (A/min.)HDP RR (A/min.)SiN RR (A/min.)TEOS: SiN Selectivity0.2% Ceria-Coated Silica3867 2718 378 10:1+ 0.1x PMAA MW 5K 1544 2377 141 11:1+ .x PMAAAM MW15K1556 2403 123 13:1 + 0.1xPMAA MW 100K761 1178 104 7:1 WO 2021/118694 PCT/US2020/056673 id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5"
id="p-5"
[0005]As the results showed in Table 9, using PMAA or its salt as oxide trench dishing reducing agent suppressed TEOS, HDP and SiN removal rates. The selectivity of TEOS: SiN was kept high and increased for PMAA MW < 100,000 from MW 5K to 15K. id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6"
id="p-6"
[0006]Different molecular weights of PMAA or poly (methacrylic acid) ammonium salts (PMAAAM) as chemical additives to reduce oxide trench dishing were tested. The results were listed in Table 10.
Table 10. Effects of Different MW of PMAA or Its Salt on Oxide Trench Dishing Rates CompositionsP 100pm Trench Dishing Rate (A/sec.)P200pm Trench Dishing Rate (A/sec.) 0.2% Ceria-Coated Silica 8.7 10.3+ 0.1x PMAA MW 5K 1.9 2.6+ .x PMAAAM MW15K3.0 7.6 + 0.1xPMAA MW100K 2.9 4.1 id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7"
id="p-7"
[0007]As the results showed in Table 10, using PMAA or its salt as oxide trench dishing reducing agents provided the reduced oxide trench dishing performances on 100pm and 200pm oxide trench features.
Example 6 id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8"
id="p-8"
[0008]In example 6, two chemical additives, polyacrylic acid ammonium salt, (PAAAS) vs PMAA were compared on their effects on oxide polishing composition performances. id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9"
id="p-9"
[0009]The compositions comprised 0.2 wt.% ceria-coated silica as abrasives. pH of the compositions at 5.35 was used as reference sample. id="p-10" id="p-10" id="p-10" id="p-10" id="p-10" id="p-10"
id="p-10"
[0010]The effects of PAAAS or PMAA as chemical additives in the polishing compositions on HDP film and SiN film removal rates were studied and the results were listed in Table 11. id="p-11" id="p-11" id="p-11" id="p-11" id="p-11" id="p-11"
id="p-11"
[0011]As the results shown in Table 11, at same pH and same abrasive concentration conditions, 0.1 wt.% PAAAS significantly suppressed HDP oxide film WO 2021/118694 PCT/US2020/056673 removal rate while comparing the HDP film removal rate obtained using 0.1 wt.% PMAA as chemical additive in the polishing composition. The composition of ceria-coated silica and 0.1 wt.% PAAAS salt used in the composition would not offer an acceptable removal rate of HDP.
Table 11. Effects of PAA Salt vs PMAA on Film Removal Rates CompositionsBlanket HDP RR (A/min)Blanket PECVD SiN RR (A/min) 0.2% Ceria-coated Silica 2771 359 + 0.01% PAAAS 2104 51 +0.1% PAAAS 570 107 +0.05% PMAA 2083 111 +0.1% PMAA 2164 130 id="p-12" id="p-12" id="p-12" id="p-12" id="p-12" id="p-12"
id="p-12"
[0012]The effects of PAAAS or PMAA as chemical additives in the polishingcompositions employed ceria-coated silica particles as abrasives on P200pm trench rates and P200pm Trench RR/Blanket HDP film RR ratios were studied, and the results were listed in Table 12.
WO 2021/118694 PCT/US2020/056673 Table 12. Effects of PAA Salt vs PMAA on P200 Trench Rates & P200Trench RR/Blanket RR Ratios CompositionsP200 Trench Rate (A/sec)P200 Trench Rate (A/min)P200 Trench RR / Blanket RR Ratio0.2% Ceria-coated Silica, pH 5.3519.2 1152 0.42 +0.01% PAAAS 17.6 1057 0.5 +0.1% PAAAS 4.2 250 0.44 +0.05% PMAA 4.8 285 0.14 +0.1% PMAA 3.7 224 0.1 id="p-13" id="p-13" id="p-13" id="p-13" id="p-13" id="p-13"
id="p-13"
[0013]As the results shown in Table 12, at same pH and same abrasiveconcentration conditions, the polishing compositions using 0.05 wt.% or 0.1 wt.% PMAA as chemical additive salt significantly reduced the P200mm trench RR/Blanket HDP RR ratios than such ratios obtained from reference sample without using chemical additive or the polishing compositions using 0.01 wt.% or 0.1 wt.% PAAAS as chemical additives. id="p-14" id="p-14" id="p-14" id="p-14" id="p-14" id="p-14"
id="p-14"
[0014]Different sized oxide trench RR/Blanket oxide film RR ratio is a keyparameter to judge on whether the oxide polishing composition can afford lower oxide dishing while used for oxide polishing CMP applications. In general, the smaller of such ratios are, the lower of oxide trench dishing are. id="p-15" id="p-15" id="p-15" id="p-15" id="p-15" id="p-15"
id="p-15"
[0015]The effects of PAAAS or PMAA as chemical additives in the polishing compositions employed ceria-coated silica particles as abrasives on P200pm trench dishing vs the over polished removal amounts were studied, and the results were listed in Table 13.
WO 2021/118694 PCT/US2020/056673 Table 13. Effects of PAA Salt vs PMAA on P200 Trench Dishing vs OP Amt.
CompositionsBlanket HDP RR (A/min)P200 Dishing (A), 1000A OP Amt.P200 Dishing (A), 1500A OP Amt. 0.19% Ceria-coated Silica + 0.14% PAAAS1974 228 371 0.2% Ceria-coated Silica + 0.1% PMAA2220 44 52 id="p-16" id="p-16" id="p-16" id="p-16" id="p-16" id="p-16"
id="p-16"
[0016]As the results shown in Table 13, at same pH and same abrasive concentration conditions, the HDP film removal rates were tuned to the similar removal rates so that the trench dishing data vs the over polished removal amounts could be compared more relatively. id="p-17" id="p-17" id="p-17" id="p-17" id="p-17" id="p-17"
id="p-17"
[0017]The P200pm dishing vs two different over polishing removal amounts demonstrated significant lower oxide trench dishing vs over polishing amounts when using PMAA as chemical additives than that trenching dishing vs over polishing amounts when using PAAAS as chemical additive in the polishing composition. id="p-18" id="p-18" id="p-18" id="p-18" id="p-18" id="p-18"
id="p-18"
[0018]The example 6 had shown that the polishing composition used PMAA as the chemical additive provided significant oxide trench dishing reduction than the polishing composition used PAAAS as chemical additive at same pH and same abrasive concentrations.
Claims (22)
1. A chemical mechanical polishing composition comprising: ceria-coated inorganic oxide particles;oxide trenching dishing reducer selected from the group consisting of organic polymer acid, its ester derivative, its salt, and combinations thereof; water based solvent; and optionallybiocide; andpH adjuster;whereinthe composition has a pH of 3 to 10; andthe oxide trench dishing reducer has a general molecular structure as shown below: wherein R1and R2 each independently is selected from the group consisting of hydrogen and an alkyl group CmH2m+1 and m is from 1 to 4; R3 is an alkyl group CmH2m+1 and m is from 1 to 4; R4 is selected from the group consisting of hydrogen, an alkyl group CmH2m+1 and m is from 1 to 4, metal ion, and ammonium ion; and n is chosen to give a molecular weight from 1,000 to 1,000,000.
2. The chemical mechanical polishing composition of Claim 1, whereinthe ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia particles and combinations thereof; -26- WO 2021/118694 PCT/US2020/056673 the oxide trench dishing reducer has a general molecular structure selected from the group consisting of:(a) poly(methacrylic acid) when R1, R2, and R4 are hydrogen, and R3 is methyl; (b) salt of poly(methacrylic acid) when R1 and R2 are hydrogen, R3 is methyl, and R4 is a metal ion or ammonium M+; COO M CH3 (c)poly (methyl methacrylate) (PMMA) when R1 and R2 are hydrogen, R3 and Rare methyl; -27 - WO 2021/118694 PCT/US2020/056673 (d)poly (ethyl methacrylate) (PEMA) when R1 and R2 are hydrogen, R3 is methyl, and R4 is ethyl; (e)2-methyl-poly (methacrylic acid) when R1 and R4 are hydrogen, R2 and R3 aremethyl; -28- WO 2021/118694 PCT/US2020/056673 the water based solvent is selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic water based solvents.
3. The chemical mechanical polishing composition of Claim 1, wherein the chemical mechanical polishing composition further comprises at least one of the biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof; andthe pH adjustor selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, and combinations thereof for acidic pH conditions; or is selected from the group consisting of sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and combinations thereof for alkaline pH conditions.
4. The chemical mechanical polishing composition of Claim 1, whereinthe ceria-coated inorganic oxide particles are consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, and combinations thereof;the oxide trench dishing reducer has a molecular weight of 1,200 to 100,000 and is selected from the group consisting of poly (methacrylic acid), salt of poly(methacrylic acid), and combinations thereof;the water based solvent is deionized (DI) water; andthe chemical mechanical polishing composition has a pH of 3.5 to 9.
5. The chemical mechanical polishing composition of claim 1, wherein the chemical mechanical polishing composition comprisesthe ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, and combinations thereof;the oxide trench dishing reducer has a molecular weight of 1,500 to 15000 and is selected from the group consisting of poly (methacrylic acid), salt of poly(methacrylic acid), and combinations thereof;deionized (DI) water; -29- WO 2021/118694 PCT/US2020/056673 the biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof;nitric acid or ammonium hydroxide; andthe chemical mechanical polishing composition has a pH of 4 to 7.
6. The chemical mechanical polishing composition of claim 1 comprises ceria-coated colloidal silica; poly (methacrylic acids) having a molecular weight of 1,200 to 100,000; deionized (DI) water; and the chemical mechanical polishing composition has a pH of 3.5 to 9.
7. The chemical mechanical polishing composition of claim 1, wherein the chemical mechanical polishing composition comprises ceria-coated colloidal silica;poly (methacrylic acids) having a molecular weight of 1,200 to 100,000;deionized (DI) water;the biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof;nitric acid or ammonium hydroxide;and the chemical mechanical polishing composition has a pH of 4 to 7.
8. A method of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising a silicon oxide film, comprising providing the semiconductor substrate; providing a polishing pad; providing the chemical mechanical polishing (CMP) composition comprising ceria-coated inorganic oxide particles;oxide trenching dishing reducer selected from the group consisting of organic polymer acid, its ester derivative, its salt, and combinations thereof; - 30- WO 2021/118694 PCT/US2020/056673 water based solvent; and optionallybiocide; and pH adjuster; whereinthe composition has a pH of 3 to 9; andthe oxide trench dishing reducer has a general molecular structure as shown below: wherein R1and R2 each independently is selected from the group consisting of hydrogen and an alkyl group CmH2m+1 and m is from 1 to 4; R3 is an alkyl group CmH2m+1 and m is from 1 to 4; R4 is selected from the group consisting of hydrogen, an alkyl group CmH2m+1 and m is from 1 to 4, metal ion, and ammonium ion; and n is chosen to give a molecular weight in from 1,000 to 1,000,000; contacting the at least one surface of the semiconductor substrate with the polishing pad and the chemical mechanical polishing composition; and polishing the at least one surface comprising the silicon oxide film; wherein the silicon oxide film is selected from the group consisting of Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on silicon oxide film. - 31 - WO 2021/118694 PCT/US2020/056673
9. The method of claim 8; whereinthe ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia particles and combinationsthereof;the oxide trench dishing reducer has a general molecular structure selected from the group consisting of: (a) poly(methacrylic acid) when R1, R2, and R4 are hydrogen, and R3 is methyl; (b) salt of poly(methacrylic acid) when R1 and R2 are hydrogen, R3 is methyl, and R4 is a metal ion or ammonium M+; (c)poly (methyl methacrylate) (PMMA) when R1 and R2 are hydrogen, R3 and Rare methyl; -32- WO 2021/118694 PCT/US2020/056673 (d)poly (ethyl methacrylate) (PEMA) when R1 and R2 are hydrogen, R3 is methyl, and R4 is ethyl; (e)2-methyl-poly (methacrylic acid) when R1 and R4 are hydrogen, R2 and R3 aremethyl; and combinations thereof; andthe water based solvent is selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic water based solvents. - 33- WO 2021/118694 PCT/US2020/056673
10. The method of claim 8; wherein the chemical mechanical polishing composition further comprises at least one ofthe biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof; andthe pH adjustor selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, and combinations thereof for acidic pH conditions; or is selected from the group consisting of sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and combinations thereof for alkaline pH conditions
11. The method of claim 8; wherein the chemical mechanical polishing composition comprisesthe ceria-coated inorganic oxide particles selected from the group consisting of ceria- coated colloidal silica, ceria-coated high purity colloidal silica, and combinations thereof;the oxide trench dishing reducer having a molecular weight of 1,200 to 100,000 and is selected from the group consisting of poly (methacrylic acid), salt of poly(methacrylic acid), and combinations thereof; deionized (DI) water.
12. The method of claim 8; wherein the chemical mechanical polishing composition comprisesthe ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, and combinations thereof;the oxide trench dishing reducer has a molecular weight of 1,500 to 15000 and is selected from the group consisting of poly (methacrylic acid), salt of poly(methacrylic acid), and combinations thereof;deionized (DI) water; - 34- WO 2021/118694 PCT/US2020/056673 the biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof;nitric acid or ammonium hydroxide;and the chemical mechanical polishing composition has a pH of 4 to 7.
13. The method of claim 8; wherein the chemical mechanical polishing composition comprises ceria-coated colloidal silica; poly (methacrylic acids) having a molecular weight of 1,200 to 100,000; and deionized (DI) water.
14. The method of claim 8; wherein the chemical mechanical polishing composition comprisesceria-coated colloidal silica;poly (methacrylic acids) having a molecular weight of 1,500 to 15000;deionized (DI) water;the biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof;nitric acid or ammonium hydroxide;and the chemical mechanical polishing composition has a pH of 4 to 7.
15. The method of claim 8; whereinthe silicon oxide film is SiO2 film;the semiconductor substrate further having at least one surface comprises a silicon nitride film; andremoval selectivity of silicon oxide: silicon nitride is greater than 10.
16. A system of chemical mechanical polishing (CMP) a semiconductor substrate having at least one surface comprising a silicon oxide film, comprisinga. the semiconductor substrate; b. the chemical mechanical polishing (CMP) composition comprising ceria-coated inorganic oxide particles;oxide trenching dishing reducer selected from the group consisting of organic polymer acid, its ester derivative, its salt, and combinations thereof; - 35- WO 2021/118694 PCT/US2020/056673 water based solvent; and optionallybiocide; andpH adjuster;whereinthe composition has a pH of 3.5 to 9; andthe oxide trench dishing reducer has a general molecular structure as shown below: wherein R1and R2 each independently is selected from the group consisting of hydrogen and an alkyl group CmH2m+1 and m is from 1 to 4; R3 is an alkyl group CmH2m+1 and m is from 1 to 4; R4 is selected from the group consisting of hydrogen, an alkyl group CmH2m+1 and m is from 1 to 4, metal ion, and ammonium ion; and n is chosen to give a molecular weight from 1,000 to 1,000,000; c. a polishing pad; wherein the silicon oxide film is selected from the group consisting of Chemical vapor deposition (CVD), Plasma Enhance CVD (PECVD), High Density Deposition CVD(HDP), or spin on silicon oxide film; and the at least one surface comprising the silicon oxide film is in contact with the polishing pad and the chemical mechanical polishing composition.
17. The system of claim 16; wherein - 36- WO 2021/118694 PCT/US2020/056673 the ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, ceria-coated alumina, ceria-coated titania, ceria-coated zirconia particles and combinations thereof;the oxide trench dishing reducer has a general molecular structure selected from the group consisting of: (a)poly(methacrylic acid) when R1, R2, and R4 are hydrogen, and R3 is methyl; (b)salt of poly(methacrylic acid) when R1 and R2 are hydrogen, R3 is methyl, and R4 is a metal ion or ammonium M+; (c)poly (methyl methacrylate) (PMMA) when R1 and R2 are hydrogen, R3 and Rare methyl; - 37- WO 2021/118694 PCT/US2020/056673 5(d)poly (ethyl methacrylate) (PEMA) when R1 and R2 are hydrogen, R3 is methyl, and R4 is ethyl; 10(e)2-methyl-poly (methacrylic acid) when R1 and R4 are hydrogen, R2 and R3 are methyl; and combinations thereof; and - 38- WO 2021/118694 PCT/US2020/056673 the water based solvent is selected from the group consisting of deionized (DI) water, distilled water, and alcoholic organic water based solvents.
18. The system of claim 16; wherein the chemical mechanical polishing composition further comprises at least one ofthe biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof; andthe pH adjustor selected from the group consisting of nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, and combinations thereof for acidic pH conditions; or is selected from the group consisting of sodium hydride, potassium hydroxide, ammonium hydroxide, tetraalkyl ammonium hydroxide, organic quaternary ammonium hydroxide compounds, organic amines, and combinations thereof for alkaline pH conditions
19. The system of claim 16; wherein the chemical mechanical polishing composition comprisesthe ceria-coated inorganic oxide particles selected from the group consisting of ceria- coated colloidal silica, ceria-coated high purity colloidal silica, and combinations thereof;the oxide trench dishing reducer having a molecular weight of 1,200 to 100,000 and is selected from the group consisting of poly (methacrylic acid), salt of poly(methacrylic acid), and combinations thereof; anddeionized (DI) water.
20. The system of claim 16; the chemical mechanical polishing composition comprises the ceria-coated inorganic oxide particles are selected from the group consisting of ceria-coated colloidal silica, ceria-coated high purity colloidal silica, and combinations thereof;the oxide trench dishing reducer has a molecular weight of 1,500 to 15000 and is selected from the group consisting of poly (methacrylic acid), salt of poly(methacrylic acid), and combinations thereof;deionized (DI) water; - 39- WO 2021/118694 PCT/US2020/056673 the biocide having an active ingredient selected from the group consisting of 5- chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof;nitric acid or ammonium hydroxide;and the chemical mechanical polishing composition has a pH of 4 to 7.
21. The system of claim 16; wherein the chemical mechanical polishing composition comprises ceria-coated colloidal silica, poly (methacrylic acids) having a molecular weight of 1,500 to 15,000; biocide having an active ingredient selected from the group consisting of 5-chloro-2-methyl-4-isothiazolin-3-one, 2-methyl-4-isothiazolin-3-one, and combinations thereof; nitric acid or ammonium hydroxide; deionized (DI) water; and the chemical mechanical polishing composition has a pH of 4 to 7.
22. The system of claim 16; whereinthe silicon oxide film is SiO2 film;the semiconductor substrate further having at least one surface comprises a silicon nitride film, wherein the at least one surface comprising a silicon nitride film is in contact with the polishing pad and the chemical mechanical polishing composition;and removal selectivity of silicon oxide: silicon nitride is greater than 10, when the at least surface comprising a silicon oxide film and the at least one surface comprising a silicon nitride film are polished with the polishing pad and the chemical mechanical polishing composition. -40-
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/711,818 US11254839B2 (en) | 2019-12-12 | 2019-12-12 | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
| TW109135359A TWI763076B (en) | 2019-12-12 | 2020-10-13 | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing composition, system and method |
| PCT/US2020/056673 WO2021118694A1 (en) | 2019-12-12 | 2020-10-21 | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
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| IL293769A true IL293769A (en) | 2022-08-01 |
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| IL293769A IL293769A (en) | 2019-12-12 | 2020-10-21 | Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing |
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| Country | Link |
|---|---|
| EP (1) | EP4073187A4 (en) |
| JP (1) | JP2023506487A (en) |
| KR (1) | KR20220113497A (en) |
| IL (1) | IL293769A (en) |
| WO (1) | WO2021118694A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20020173243A1 (en) * | 2001-04-05 | 2002-11-21 | Costas Wesley D. | Polishing composition having organic polymer particles |
| JP2003313542A (en) * | 2002-04-22 | 2003-11-06 | Jsr Corp | Aqueous dispersion for chemomechanical polishing use |
| TW200734436A (en) * | 2006-01-30 | 2007-09-16 | Fujifilm Corp | Metal-polishing liquid and chemical mechanical polishing method using the same |
| JP2010512657A (en) * | 2006-12-22 | 2010-04-22 | テクノ セミケム シーオー．， エルティーディー． | Copper chemical mechanical polishing composition containing zeolite |
| CN114621686A (en) * | 2015-01-12 | 2022-06-14 | 弗萨姆材料美国有限责任公司 | Abrasive composite particles for chemical mechanical planarization compositions and methods of use thereof |
| US10032644B2 (en) * | 2015-06-05 | 2018-07-24 | Versum Materials Us, Llc | Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives |
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- 2020-10-21 KR KR1020227023858A patent/KR20220113497A/en unknown
- 2020-10-21 JP JP2022535706A patent/JP2023506487A/en active Pending
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| Publication number | Publication date |
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| EP4073187A1 (en) | 2022-10-19 |
| JP2023506487A (en) | 2023-02-16 |
| WO2021118694A1 (en) | 2021-06-17 |
| EP4073187A4 (en) | 2023-12-13 |
| KR20220113497A (en) | 2022-08-12 |
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