IL283407A - Method for of measuring a focus parameter relating to a structure formed using a lithographic process - Google Patents
Method for of measuring a focus parameter relating to a structure formed using a lithographic processInfo
- Publication number
- IL283407A IL283407A IL283407A IL28340721A IL283407A IL 283407 A IL283407 A IL 283407A IL 283407 A IL283407 A IL 283407A IL 28340721 A IL28340721 A IL 28340721A IL 283407 A IL283407 A IL 283407A
- Authority
- IL
- Israel
- Prior art keywords
- measuring
- structure formed
- lithographic process
- parameter relating
- focus parameter
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
- G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
- G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18208291.7A EP3657257A1 (de) | 2018-11-26 | 2018-11-26 | Verfahren zur messung eines fokusparameters in bezug auf eine struktur, die mithilfe eines lithographischen verfahrens hergestellt wurde |
PCT/EP2019/078172 WO2020108846A1 (en) | 2018-11-26 | 2019-10-17 | Method for of measuring a focus parameter relating to a structure formed using a lithographic process |
Publications (1)
Publication Number | Publication Date |
---|---|
IL283407A true IL283407A (en) | 2021-07-29 |
Family
ID=64477007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL283407A IL283407A (en) | 2018-11-26 | 2021-05-24 | Method for of measuring a focus parameter relating to a structure formed using a lithographic process |
Country Status (6)
Country | Link |
---|---|
US (1) | US11022899B2 (de) |
EP (1) | EP3657257A1 (de) |
CN (1) | CN113168112A (de) |
IL (1) | IL283407A (de) |
TW (1) | TWI729560B (de) |
WO (1) | WO2020108846A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4050328A1 (de) * | 2021-02-25 | 2022-08-31 | ASML Netherlands B.V. | Verfahren zur vorhersage eines metrologieversatzes eines halbleiterherstellungsprozesses |
EP4399573A1 (de) * | 2021-09-09 | 2024-07-17 | ASML Netherlands B.V. | Verfahren zur konvertierung von metrologiedaten |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL148485A (en) * | 2002-03-04 | 2008-07-08 | Nova Measuring Instr Ltd | Optical measurements of properties of modeled buildings |
US6804005B2 (en) * | 2002-05-02 | 2004-10-12 | Timbre Technologies, Inc. | Overlay measurements using zero-order cross polarization measurements |
US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
WO2007019269A2 (en) * | 2005-08-08 | 2007-02-15 | Brion Technologies, Inc. | System and method for creating a focus-exposure model of a lithography process |
US8189195B2 (en) * | 2007-05-09 | 2012-05-29 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method |
NL1036245A1 (nl) | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
NL1036597A1 (nl) | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
NL1036857A1 (nl) | 2008-04-21 | 2009-10-22 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
NL2002883A1 (nl) * | 2008-06-26 | 2009-12-29 | Asml Netherlands Bv | Overlay measurement apparatus, lithographic apparatus, and device manufacturing method using such overlay measurement apparatus. |
KR101295203B1 (ko) | 2008-10-06 | 2013-08-09 | 에이에스엠엘 네델란즈 비.브이. | 2차원 타겟을 이용한 리소그래피 포커스 및 조사량 측정 |
NL2004094A (en) | 2009-02-11 | 2010-08-12 | Asml Netherlands Bv | Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method. |
NL2005162A (en) | 2009-07-31 | 2011-02-02 | Asml Netherlands Bv | Methods and scatterometers, lithographic systems, and lithographic processing cells. |
JP2013502592A (ja) | 2009-08-24 | 2013-01-24 | エーエスエムエル ネザーランズ ビー.ブイ. | メトロロジ方法および装置、リソグラフィ装置、リソグラフィプロセシングセル、およびメトロロジターゲットを備える基板 |
KR101793584B1 (ko) * | 2010-04-30 | 2017-11-03 | 가부시키가이샤 니콘 | 검사 장치 및 검사 방법 |
NL2007176A (en) | 2010-08-18 | 2012-02-21 | Asml Netherlands Bv | Substrate for use in metrology, metrology method and device manufacturing method. |
US10352875B2 (en) * | 2010-10-26 | 2019-07-16 | Nikon Corporation | Inspection apparatus, inspection method, exposure method, and method for manufacturing semiconductor device |
KR101492205B1 (ko) | 2010-11-12 | 2015-02-10 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법 |
JPWO2013081072A1 (ja) * | 2011-11-29 | 2015-04-27 | 株式会社ニコン | 測定装置、測定方法および半導体デバイス製造方法 |
CN104220932B (zh) * | 2012-02-21 | 2017-02-22 | Asml荷兰有限公司 | 检查设备和方法 |
NL2010401A (en) | 2012-03-27 | 2013-09-30 | Asml Netherlands Bv | Metrology method and apparatus, lithographic system and device manufacturing method. |
NL2010458A (en) | 2012-04-16 | 2013-10-17 | Asml Netherlands Bv | Lithographic apparatus, substrate and device manufacturing method background. |
KR101759608B1 (ko) | 2012-05-29 | 2017-07-20 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법 |
TWI663485B (zh) * | 2012-12-20 | 2019-06-21 | 日商尼康股份有限公司 | Evaluation method and device, processing method, exposure system, and component manufacturing method |
CN106062634B (zh) * | 2014-02-21 | 2019-06-07 | Asml荷兰有限公司 | 测量涉及光刻术的制造过程的过程参数 |
JP6618551B2 (ja) * | 2015-06-12 | 2019-12-11 | エーエスエムエル ネザーランズ ビー.ブイ. | 検査装置、検査方法、リソグラフィ装置、パターニングデバイス及び製造方法 |
NL2017300A (en) * | 2015-08-27 | 2017-03-01 | Asml Netherlands Bv | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
CN108604065B (zh) * | 2015-12-23 | 2021-10-26 | Asml荷兰有限公司 | 量测方法、目标和衬底 |
KR20180115299A (ko) | 2016-02-22 | 2018-10-22 | 에이에스엠엘 네델란즈 비.브이. | 계측 데이터에 대한 기여도들의 분리 |
KR102188711B1 (ko) * | 2016-02-26 | 2020-12-09 | 에이에스엠엘 네델란즈 비.브이. | 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
US10615084B2 (en) * | 2016-03-01 | 2020-04-07 | Asml Netherlands B.V. | Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values |
EP3647871A1 (de) * | 2018-10-31 | 2020-05-06 | ASML Netherlands B.V. | Verfahren zur bestimmung eines wertes eines interessierenden parameters eines strukturierungsprozesses, verfahren zur herstellung einer vorrichtung |
-
2018
- 2018-11-26 EP EP18208291.7A patent/EP3657257A1/de not_active Withdrawn
-
2019
- 2019-10-17 WO PCT/EP2019/078172 patent/WO2020108846A1/en active Application Filing
- 2019-10-17 CN CN201980077610.2A patent/CN113168112A/zh active Pending
- 2019-11-11 TW TW108140773A patent/TWI729560B/zh active
- 2019-11-25 US US16/693,453 patent/US11022899B2/en active Active
-
2021
- 2021-05-24 IL IL283407A patent/IL283407A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN113168112A (zh) | 2021-07-23 |
WO2020108846A1 (en) | 2020-06-04 |
TW202028881A (zh) | 2020-08-01 |
US11022899B2 (en) | 2021-06-01 |
TWI729560B (zh) | 2021-06-01 |
EP3657257A1 (de) | 2020-05-27 |
US20200166335A1 (en) | 2020-05-28 |
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