IL283407A - Method for of measuring a focus parameter relating to a structure formed using a lithographic process - Google Patents

Method for of measuring a focus parameter relating to a structure formed using a lithographic process

Info

Publication number
IL283407A
IL283407A IL283407A IL28340721A IL283407A IL 283407 A IL283407 A IL 283407A IL 283407 A IL283407 A IL 283407A IL 28340721 A IL28340721 A IL 28340721A IL 283407 A IL283407 A IL 283407A
Authority
IL
Israel
Prior art keywords
measuring
structure formed
lithographic process
parameter relating
focus parameter
Prior art date
Application number
IL283407A
Other languages
English (en)
Hebrew (he)
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of IL283407A publication Critical patent/IL283407A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL283407A 2018-11-26 2021-05-24 Method for of measuring a focus parameter relating to a structure formed using a lithographic process IL283407A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18208291.7A EP3657257A1 (de) 2018-11-26 2018-11-26 Verfahren zur messung eines fokusparameters in bezug auf eine struktur, die mithilfe eines lithographischen verfahrens hergestellt wurde
PCT/EP2019/078172 WO2020108846A1 (en) 2018-11-26 2019-10-17 Method for of measuring a focus parameter relating to a structure formed using a lithographic process

Publications (1)

Publication Number Publication Date
IL283407A true IL283407A (en) 2021-07-29

Family

ID=64477007

Family Applications (1)

Application Number Title Priority Date Filing Date
IL283407A IL283407A (en) 2018-11-26 2021-05-24 Method for of measuring a focus parameter relating to a structure formed using a lithographic process

Country Status (6)

Country Link
US (1) US11022899B2 (de)
EP (1) EP3657257A1 (de)
CN (1) CN113168112A (de)
IL (1) IL283407A (de)
TW (1) TWI729560B (de)
WO (1) WO2020108846A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4050328A1 (de) * 2021-02-25 2022-08-31 ASML Netherlands B.V. Verfahren zur vorhersage eines metrologieversatzes eines halbleiterherstellungsprozesses
EP4399573A1 (de) * 2021-09-09 2024-07-17 ASML Netherlands B.V. Verfahren zur konvertierung von metrologiedaten

Family Cites Families (31)

* Cited by examiner, † Cited by third party
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IL148485A (en) * 2002-03-04 2008-07-08 Nova Measuring Instr Ltd Optical measurements of properties of modeled buildings
US6804005B2 (en) * 2002-05-02 2004-10-12 Timbre Technologies, Inc. Overlay measurements using zero-order cross polarization measurements
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
WO2007019269A2 (en) * 2005-08-08 2007-02-15 Brion Technologies, Inc. System and method for creating a focus-exposure model of a lithography process
US8189195B2 (en) * 2007-05-09 2012-05-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
NL2002883A1 (nl) * 2008-06-26 2009-12-29 Asml Netherlands Bv Overlay measurement apparatus, lithographic apparatus, and device manufacturing method using such overlay measurement apparatus.
KR101295203B1 (ko) 2008-10-06 2013-08-09 에이에스엠엘 네델란즈 비.브이. 2차원 타겟을 이용한 리소그래피 포커스 및 조사량 측정
NL2004094A (en) 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
NL2005162A (en) 2009-07-31 2011-02-02 Asml Netherlands Bv Methods and scatterometers, lithographic systems, and lithographic processing cells.
JP2013502592A (ja) 2009-08-24 2013-01-24 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法および装置、リソグラフィ装置、リソグラフィプロセシングセル、およびメトロロジターゲットを備える基板
KR101793584B1 (ko) * 2010-04-30 2017-11-03 가부시키가이샤 니콘 검사 장치 및 검사 방법
NL2007176A (en) 2010-08-18 2012-02-21 Asml Netherlands Bv Substrate for use in metrology, metrology method and device manufacturing method.
US10352875B2 (en) * 2010-10-26 2019-07-16 Nikon Corporation Inspection apparatus, inspection method, exposure method, and method for manufacturing semiconductor device
KR101492205B1 (ko) 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
JPWO2013081072A1 (ja) * 2011-11-29 2015-04-27 株式会社ニコン 測定装置、測定方法および半導体デバイス製造方法
CN104220932B (zh) * 2012-02-21 2017-02-22 Asml荷兰有限公司 检查设备和方法
NL2010401A (en) 2012-03-27 2013-09-30 Asml Netherlands Bv Metrology method and apparatus, lithographic system and device manufacturing method.
NL2010458A (en) 2012-04-16 2013-10-17 Asml Netherlands Bv Lithographic apparatus, substrate and device manufacturing method background.
KR101759608B1 (ko) 2012-05-29 2017-07-20 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법
TWI663485B (zh) * 2012-12-20 2019-06-21 日商尼康股份有限公司 Evaluation method and device, processing method, exposure system, and component manufacturing method
CN106062634B (zh) * 2014-02-21 2019-06-07 Asml荷兰有限公司 测量涉及光刻术的制造过程的过程参数
JP6618551B2 (ja) * 2015-06-12 2019-12-11 エーエスエムエル ネザーランズ ビー．ブイ． 検査装置、検査方法、リソグラフィ装置、パターニングデバイス及び製造方法
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
CN108604065B (zh) * 2015-12-23 2021-10-26 Asml荷兰有限公司 量测方法、目标和衬底
KR20180115299A (ko) 2016-02-22 2018-10-22 에이에스엠엘 네델란즈 비.브이. 계측 데이터에 대한 기여도들의 분리
KR102188711B1 (ko) * 2016-02-26 2020-12-09 에이에스엠엘 네델란즈 비.브이. 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법
US10615084B2 (en) * 2016-03-01 2020-04-07 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter, associated with a change in a physical configuration, using measured pixel optical characteristic values
EP3647871A1 (de) * 2018-10-31 2020-05-06 ASML Netherlands B.V. Verfahren zur bestimmung eines wertes eines interessierenden parameters eines strukturierungsprozesses, verfahren zur herstellung einer vorrichtung

Also Published As

Publication number Publication date
CN113168112A (zh) 2021-07-23
WO2020108846A1 (en) 2020-06-04
TW202028881A (zh) 2020-08-01
US11022899B2 (en) 2021-06-01
TWI729560B (zh) 2021-06-01
EP3657257A1 (de) 2020-05-27
US20200166335A1 (en) 2020-05-28

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