IL283407A - A method for measuring a focus parameter related to the structure created using a lithographic process - Google Patents

A method for measuring a focus parameter related to the structure created using a lithographic process

Info

Publication number
IL283407A
IL283407A IL283407A IL28340721A IL283407A IL 283407 A IL283407 A IL 283407A IL 283407 A IL283407 A IL 283407A IL 28340721 A IL28340721 A IL 28340721A IL 283407 A IL283407 A IL 283407A
Authority
IL
Israel
Prior art keywords
measuring
structure formed
lithographic process
parameter relating
focus parameter
Prior art date
Application number
IL283407A
Other languages
English (en)
Hebrew (he)
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of IL283407A publication Critical patent/IL283407A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL283407A 2018-11-26 2021-05-24 A method for measuring a focus parameter related to the structure created using a lithographic process IL283407A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18208291.7A EP3657257A1 (de) 2018-11-26 2018-11-26 Verfahren zur messung eines fokusparameters in bezug auf eine struktur, die mithilfe eines lithographischen verfahrens hergestellt wurde
PCT/EP2019/078172 WO2020108846A1 (en) 2018-11-26 2019-10-17 Method for of measuring a focus parameter relating to a structure formed using a lithographic process

Publications (1)

Publication Number Publication Date
IL283407A true IL283407A (en) 2021-07-29

Family

ID=64477007

Family Applications (1)

Application Number Title Priority Date Filing Date
IL283407A IL283407A (en) 2018-11-26 2021-05-24 A method for measuring a focus parameter related to the structure created using a lithographic process

Country Status (6)

Country Link
US (1) US11022899B2 (de)
EP (1) EP3657257A1 (de)
CN (1) CN113168112B (de)
IL (1) IL283407A (de)
TW (1) TWI729560B (de)
WO (1) WO2020108846A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4050328A1 (de) * 2021-02-25 2022-08-31 ASML Netherlands B.V. Verfahren zur vorhersage eines metrologieversatzes eines halbleiterherstellungsprozesses
WO2023036593A1 (en) * 2021-09-09 2023-03-16 Asml Netherlands B.V. Method for converting metrology data

Family Cites Families (31)

* Cited by examiner, † Cited by third party
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IL148485A (en) * 2002-03-04 2008-07-08 Nova Measuring Instr Ltd Optical measurements of properties of modeled buildings
US6804005B2 (en) * 2002-05-02 2004-10-12 Timbre Technologies, Inc. Overlay measurements using zero-order cross polarization measurements
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
KR100958714B1 (ko) * 2005-08-08 2010-05-18 브라이언 테크놀로지스, 인코포레이티드 리소그래피 공정의 포커스-노광 모델을 생성하는 시스템 및방법
US8189195B2 (en) * 2007-05-09 2012-05-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
NL1036857A1 (nl) 2008-04-21 2009-10-22 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
CN102067040B (zh) * 2008-06-26 2013-05-08 Asml荷兰有限公司 重叠测量设备、光刻设备和使用这种重叠测量设备的器件制造方法
US8891061B2 (en) 2008-10-06 2014-11-18 Asml Netherlands B.V. Lithographic focus and dose measurement using a 2-D target
NL2004094A (en) 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
KR101461457B1 (ko) 2009-07-31 2014-11-13 에이에스엠엘 네델란즈 비.브이. 계측 방법 및 장치, 리소그래피 시스템, 및 리소그래피 처리 셀
WO2011023517A1 (en) 2009-08-24 2011-03-03 Asml Netherlands B.V. Metrology method and apparatus, lithographic apparatus, lithographic processing cell and substrate comprising metrology targets
CN102884609B (zh) * 2010-04-30 2016-04-13 株式会社尼康 检查装置及检查方法
WO2012022584A1 (en) 2010-08-18 2012-02-23 Asml Netherlands B.V. Substrate for use in metrology, metrology method and device manufacturing method
CN103283002B (zh) * 2010-10-26 2016-06-15 株式会社尼康 检查装置、检查方法、曝光方法、以及半导体元件的制造方法
US9140998B2 (en) 2010-11-12 2015-09-22 Asml Netherlands B.V. Metrology method and inspection apparatus, lithographic system and device manufacturing method
US20140315330A1 (en) * 2011-11-29 2014-10-23 Nikon Corporation Measurement device, measurement method, and method for manufacturing semiconductor device
KR101704591B1 (ko) * 2012-02-21 2017-02-08 에이에스엠엘 네델란즈 비.브이. 검사 장치 및 방법
KR101761735B1 (ko) 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
NL2010458A (en) 2012-04-16 2013-10-17 Asml Netherlands Bv Lithographic apparatus, substrate and device manufacturing method background.
JP6077647B2 (ja) 2012-05-29 2017-02-08 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジー方法及び装置、基板、リソグラフィシステム並びにデバイス製造方法
WO2014098220A1 (ja) * 2012-12-20 2014-06-26 株式会社ニコン 評価方法及び装置、加工方法、並びに露光システム
US10073357B2 (en) * 2014-02-21 2018-09-11 Asml Netherlands B.V. Measuring a process parameter for a manufacturing process involving lithography
CN107710073B (zh) * 2015-06-12 2021-04-30 Asml荷兰有限公司 检查设备、检查方法、光刻设备、图案化装置及制造方法
NL2017300A (en) * 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
WO2017108411A1 (en) * 2015-12-23 2017-06-29 Asml Netherlands B.V. Metrology method and apparatus
US11520239B2 (en) * 2016-02-22 2022-12-06 Asml Netherlands B.V. Separation of contributions to metrology data
JP6703612B2 (ja) * 2016-02-26 2020-06-03 エーエスエムエル ネザーランズ ビー．ブイ． 構造を測定する方法、検査装置、リソグラフィシステム、およびデバイス製造方法
US10811323B2 (en) * 2016-03-01 2020-10-20 Asml Netherlands B.V. Method and apparatus to determine a patterning process parameter
EP3647871A1 (de) * 2018-10-31 2020-05-06 ASML Netherlands B.V. Verfahren zur bestimmung eines wertes eines interessierenden parameters eines strukturierungsprozesses, verfahren zur herstellung einer vorrichtung

Also Published As

Publication number Publication date
EP3657257A1 (de) 2020-05-27
US20200166335A1 (en) 2020-05-28
US11022899B2 (en) 2021-06-01
WO2020108846A1 (en) 2020-06-04
TWI729560B (zh) 2021-06-01
TW202028881A (zh) 2020-08-01
CN113168112B (zh) 2024-08-13
CN113168112A (zh) 2021-07-23

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