IL260461A - - Google Patents

Info

Publication number
IL260461A
IL260461A IL26046118A IL26046118A IL260461A IL 260461 A IL260461 A IL 260461A IL 26046118 A IL26046118 A IL 26046118A IL 26046118 A IL26046118 A IL 26046118A IL 260461 A IL260461 A IL 260461A
Authority
IL
Israel
Application number
IL26046118A
Other versions
IL260461B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of IL260461A publication Critical patent/IL260461A/xx
Publication of IL260461B publication Critical patent/IL260461B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1207—Einzel lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1534—Aberrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1536—Image distortions due to scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/21—Focus adjustment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2801—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2817—Pattern inspection

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Beam Exposure (AREA)
  • Eye Examination Apparatus (AREA)
IL260461A 2016-02-04 2017-02-01 Field curvature correction for ray-ray test systems IL260461B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662291120P 2016-02-04 2016-02-04
US15/173,144 US11302511B2 (en) 2016-02-04 2016-06-03 Field curvature correction for multi-beam inspection systems
PCT/US2017/016082 WO2017136465A1 (en) 2016-02-04 2017-02-01 Field curvature correction for multi-beam inspection systems

Publications (2)

Publication Number Publication Date
IL260461A true IL260461A (ko) 2018-09-20
IL260461B IL260461B (en) 2022-08-01

Family

ID=59497941

Family Applications (1)

Application Number Title Priority Date Filing Date
IL260461A IL260461B (en) 2016-02-04 2017-02-01 Field curvature correction for ray-ray test systems

Country Status (9)

Country Link
US (1) US11302511B2 (ko)
EP (1) EP3411901A4 (ko)
JP (1) JP6941106B2 (ko)
KR (1) KR20180101724A (ko)
CN (1) CN108604562A (ko)
IL (1) IL260461B (ko)
SG (1) SG11201805471QA (ko)
TW (1) TWI760324B (ko)
WO (1) WO2017136465A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3685421A1 (en) * 2017-09-19 2020-07-29 ASML Netherlands B.V. Charged particle beam apparatus, and systems and methods for operating the apparatus
US11569060B2 (en) * 2017-09-29 2023-01-31 Asml Netherlands B.V. Methods and apparatuses for adjusting beam condition of charged particles
CN108107059B (zh) * 2017-11-16 2021-03-05 上海华力微电子有限公司 一种接触孔底部钨栓缺陷的检测结构及检测方法
EP3618095A1 (en) 2018-08-28 2020-03-04 ASML Netherlands B.V. Multi electron beam inspection methods and systems
JP7169452B2 (ja) 2018-12-31 2022-11-10 エーエスエムエル ネザーランズ ビー．ブイ． マルチビーム検査装置
JP7175798B2 (ja) * 2019-03-01 2022-11-21 株式会社荏原製作所 荷電粒子マルチビーム装置
JP2021034281A (ja) * 2019-08-28 2021-03-01 株式会社ニューフレアテクノロジー 電子銃及び電子ビーム照射装置
IL294401A (en) 2020-01-06 2022-08-01 Asml Netherlands Bv Charged particle evaluation tool, test method
US11651934B2 (en) 2021-09-30 2023-05-16 Kla Corporation Systems and methods of creating multiple electron beams
CN116435163A (zh) * 2023-06-12 2023-07-14 广东省科学院半导体研究所 多电子束场曲校正模块及电子束光柱体

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3728015B2 (ja) 1996-06-12 2005-12-21 キヤノン株式会社 電子ビーム露光システム及びそれを用いたデバイス製造方法
US6566664B2 (en) * 2000-03-17 2003-05-20 Canon Kabushiki Kaisha Charged-particle beam exposure apparatus and device manufacturing method
JP2001332473A (ja) 2000-05-23 2001-11-30 Canon Inc 荷電粒子線露光装置及び該装置を用いたデバイス製造方法
WO2001075947A1 (fr) * 2000-04-04 2001-10-11 Advantest Corporation Appareil d'exposition multifaisceau comprenant une lentille elctronique multi-axiale, une lentille electronique multi-axiale pour la focalisation de faisceaux d'electrons, et procede de fabrication de dispositif semi-conducteur
JP4434440B2 (ja) * 2000-06-19 2010-03-17 Ｎｅｃエレクトロニクス株式会社 電子線露光用マスクの検査方法および電子線露光方法
JP4091263B2 (ja) * 2001-03-27 2008-05-28 株式会社東芝 フォーカスモニタ方法及び露光装置
JP4647820B2 (ja) 2001-04-23 2011-03-09 キヤノン株式会社 荷電粒子線描画装置、および、デバイスの製造方法
US6750455B2 (en) 2001-07-02 2004-06-15 Applied Materials, Inc. Method and apparatus for multiple charged particle beams
US20030132382A1 (en) 2001-12-18 2003-07-17 Sogard Michael R. System and method for inspecting a mask
EP2579269B8 (en) 2003-09-05 2019-05-22 Carl Zeiss Microscopy GmbH Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
US8038897B2 (en) 2007-02-06 2011-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for wafer inspection
US8890094B2 (en) * 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
JP2012195097A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
US8362425B2 (en) 2011-03-23 2013-01-29 Kla-Tencor Corporation Multiple-beam system for high-speed electron-beam inspection
JP2013004216A (ja) * 2011-06-14 2013-01-07 Canon Inc 荷電粒子線レンズ
JP5886663B2 (ja) 2012-03-21 2016-03-16 株式会社日立ハイテクノロジーズ 電子線応用装置およびレンズアレイ
US9373492B2 (en) * 2013-03-14 2016-06-21 The University Of North Carolina At Chapel Hill Microscale mass spectrometry systems, devices and related methods
US9257260B2 (en) 2013-04-27 2016-02-09 Kla-Tencor Corporation Method and system for adaptively scanning a sample during electron beam inspection
US9752992B2 (en) 2014-03-25 2017-09-05 Kla-Tencor Corporation Variable image field curvature for object inspection
KR102389365B1 (ko) * 2014-06-13 2022-04-22 인텔 코포레이션 Ｅ 빔 범용 커터

Also Published As

Publication number Publication date
EP3411901A4 (en) 2020-03-11
US20170229279A1 (en) 2017-08-10
US11302511B2 (en) 2022-04-12
CN108604562A (zh) 2018-09-28
EP3411901A1 (en) 2018-12-12
WO2017136465A1 (en) 2017-08-10
JP2019510339A (ja) 2019-04-11
TWI760324B (zh) 2022-04-11
TW201732259A (zh) 2017-09-16
SG11201805471QA (en) 2018-08-30
KR20180101724A (ko) 2018-09-13
IL260461B (en) 2022-08-01
JP6941106B2 (ja) 2021-09-29

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