IL245318B - התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן - Google Patents

התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן

Info

Publication number
IL245318B
IL245318B IL245318A IL24531816A IL245318B IL 245318 B IL245318 B IL 245318B IL 245318 A IL245318 A IL 245318A IL 24531816 A IL24531816 A IL 24531816A IL 245318 B IL245318 B IL 245318B
Authority
IL
Israel
Prior art keywords
substrates
preparing
methods
lithographic system
test device
Prior art date
Application number
IL245318A
Other languages
English (en)
Other versions
IL245318A0 (he
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of IL245318A0 publication Critical patent/IL245318A0/he
Publication of IL245318B publication Critical patent/IL245318B/he

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/213—Exposing with the same light pattern different positions of the same surface at the same time
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
IL245318A 2013-10-30 2016-04-27 התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן IL245318B (he)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361897562P 2013-10-30 2013-10-30
PCT/EP2014/071910 WO2015062854A1 (en) 2013-10-30 2014-10-13 Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method

Publications (2)

Publication Number Publication Date
IL245318A0 IL245318A0 (he) 2016-06-30
IL245318B true IL245318B (he) 2020-08-31

Family

ID=51691058

Family Applications (1)

Application Number Title Priority Date Filing Date
IL245318A IL245318B (he) 2013-10-30 2016-04-27 התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן

Country Status (7)

Country Link
US (3) US9958791B2 (he)
KR (1) KR101855220B1 (he)
CN (1) CN105814491B (he)
IL (1) IL245318B (he)
NL (1) NL2013625A (he)
TW (1) TWI554847B (he)
WO (1) WO2015062854A1 (he)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7541201B2 (en) * 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US9958791B2 (en) 2013-10-30 2018-05-01 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method
TWI648515B (zh) * 2013-11-15 2019-01-21 美商克萊譚克公司 計量目標及其計量量測、目標設計檔案、計量方法及以電腦為基礎之設備
JP6412163B2 (ja) * 2014-05-13 2018-10-24 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジーに用いられる基板及びパターニングデバイス、メトロロジー方法、及びデバイス製造方法
NL2017300A (en) 2015-08-27 2017-03-01 Asml Netherlands Bv Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method
NL2017452A (en) * 2015-10-02 2017-04-11 Asml Netherlands Bv Metrology method and apparatus, computer program and lithographic system
KR102128523B1 (ko) * 2015-12-03 2020-07-01 에이에스엠엘 네델란즈 비.브이. 위치 측정 방법, 리소그래피 장치, 리소 셀 및 디바이스 제조 방법
SG11201804232QA (en) 2015-12-21 2018-06-28 Asml Netherlands Bv Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
US10437158B2 (en) 2015-12-31 2019-10-08 Asml Netherlands B.V. Metrology by reconstruction
WO2017178133A1 (en) 2016-04-12 2017-10-19 Asml Netherlands B.V. Mark position determination method
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
WO2018071063A1 (en) * 2016-10-14 2018-04-19 Kla-Tencor Corporation Diffraction-based focus metrology
CN106773526B (zh) * 2016-12-30 2020-09-01 武汉华星光电技术有限公司 一种掩膜版，彩膜基板及其制作方法
DE112017007043T5 (de) * 2017-02-10 2020-01-16 KLA Corp. Milderung von ungenauigkeiten im zusammenhang mit gitterasymmetrien in scatterometrie-messungen
CN110383177B (zh) * 2017-02-22 2021-10-29 Asml荷兰有限公司 计算量测法
JP2020519928A (ja) * 2017-05-08 2020-07-02 エーエスエムエル ネザーランズ ビー．ブイ． 構造を測定する方法、検査装置、リソグラフィシステム、及びデバイス製造方法
EP3422102A1 (en) * 2017-06-26 2019-01-02 ASML Netherlands B.V. Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
IL273836B2 (he) * 2017-10-31 2023-09-01 Asml Netherlands Bv התקן מדידה, שיטה למדידת מבנה, שיטה לייצור מכשיר
KR102529770B1 (ko) * 2017-11-07 2023-05-04 에이에스엠엘 네델란즈 비.브이. 관심 특성을 결정하는 계측 장치 및 방법
US10943838B2 (en) * 2017-11-29 2021-03-09 Kla-Tencor Corporation Measurement of overlay error using device inspection system
EP3629086A1 (en) * 2018-09-25 2020-04-01 ASML Netherlands B.V. Method and apparatus for determining a radiation beam intensity profile
IL282017B2 (he) * 2018-10-08 2025-11-01 Asml Netherlands Bv שיטה מטרולוגית, מכשיר דפוסים, התקן ותוכנת מחשב
EP3640735A1 (en) * 2018-10-18 2020-04-22 ASML Netherlands B.V. Methods and apparatus for inspection of a structure and associated apparatuses
WO2020200993A1 (en) * 2019-04-04 2020-10-08 Asml Netherlands B.V. Method and apparatus for predicting substrate image
EP3796089A1 (en) * 2019-09-18 2021-03-24 ASML Holding N.V. A method for filtering an image and associated metrology apparatus
CN111504210B (zh) * 2020-04-01 2021-07-20 武汉大学 一种用于节距移动的测量基底及其制备方法、测量方法
US11556062B2 (en) * 2021-03-18 2023-01-17 Kla Corporation Sub-resolution imaging target
US12406891B2 (en) 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
US12140859B2 (en) 2021-12-17 2024-11-12 Kla Corporation Overlay target design for improved target placement accuracy
WO2023113850A1 (en) * 2021-12-17 2023-06-22 Kla Corporation Overlay target design for improved target placement accuracy
US20250341787A1 (en) * 2022-04-15 2025-11-06 Asml Netherlands B.V. Configurable printed optical routing for parallel optical detection
CN114935877A (zh) * 2022-05-24 2022-08-23 上海华力集成电路制造有限公司 一种改善光刻胶形貌不对称的辅助图形设计方法
TWI835363B (zh) * 2022-10-24 2024-03-11 華邦電子股份有限公司 半導體晶圓、疊對偏移的處理裝置及其方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000057126A1 (en) * 1999-03-24 2000-09-28 Nikon Corporation Position determining device, position determining method and exposure device, exposure method and alignment determining device, and alignment determining method
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7068833B1 (en) * 2000-08-30 2006-06-27 Kla-Tencor Corporation Overlay marks, methods of overlay mark design and methods of overlay measurements
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
US20050244729A1 (en) * 2004-04-29 2005-11-03 United Microelectronics Corp. Method of measuring the overlay accuracy of a multi-exposure process
US7791727B2 (en) 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7528941B2 (en) * 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
DE102007046850B4 (de) * 2007-09-29 2014-05-22 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren zum Bestimmen einer Überlagerungsgenauigkeit
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
NL1036597A1 (nl) 2008-02-29 2009-09-01 Asml Netherlands Bv Metrology method and apparatus, lithographic apparatus, and device manufacturing method.
CN101299132B (zh) * 2008-05-27 2010-06-02 上海微电子装备有限公司 一种用于光刻设备对准系统的对准标记及其使用方法
NL2004094A (en) 2009-02-11 2010-08-12 Asml Netherlands Bv Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method.
JP2013500586A (ja) 2009-07-22 2013-01-07 ケーエルエー−テンカー・コーポレーション 角度分解逆対称光波散乱計測
CN102498441B (zh) 2009-07-31 2015-09-16 Asml荷兰有限公司 量测方法和设备、光刻系统以及光刻处理单元
CN102483582B (zh) 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
NL2005459A (en) * 2009-12-08 2011-06-09 Asml Netherlands Bv Inspection method and apparatus, and corresponding lithographic apparatus.
WO2012022584A1 (en) 2010-08-18 2012-02-23 Asml Netherlands B.V. Substrate for use in metrology, metrology method and device manufacturing method
NL2007425A (en) * 2010-11-12 2012-05-15 Asml Netherlands Bv Metrology method and apparatus, and device manufacturing method.
JP5661194B2 (ja) 2010-11-12 2015-01-28 エーエスエムエル ネザーランズ ビー．ブイ． メトロロジ方法及び装置、リソグラフィシステム並びにデバイス製造方法
US8455162B2 (en) 2011-06-28 2013-06-04 International Business Machines Corporation Alignment marks for multi-exposure lithography
US8745546B2 (en) 2011-12-29 2014-06-03 Nanya Technology Corporation Mask overlay method, mask, and semiconductor device using the same
KR101761735B1 (ko) 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
NL2010458A (en) 2012-04-16 2013-10-17 Asml Netherlands Bv Lithographic apparatus, substrate and device manufacturing method background.
US8817273B2 (en) * 2012-04-24 2014-08-26 Nanometrics Incorporated Dark field diffraction based overlay
KR101759608B1 (ko) 2012-05-29 2017-07-20 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 기판, 리소그래피 시스템 및 디바이스 제조 방법
US8913237B2 (en) * 2012-06-26 2014-12-16 Kla-Tencor Corporation Device-like scatterometry overlay targets
US9733572B2 (en) 2013-03-20 2017-08-15 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
US9958791B2 (en) 2013-10-30 2018-05-01 Asml Netherlands B.V. Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method

Also Published As

Publication number Publication date
US10761432B2 (en) 2020-09-01
IL245318A0 (he) 2016-06-30
CN105814491B (zh) 2017-12-05
TWI554847B (zh) 2016-10-21
US9958791B2 (en) 2018-05-01
NL2013625A (en) 2015-05-04
US20200348605A1 (en) 2020-11-05
US20180239263A1 (en) 2018-08-23
KR20160078479A (ko) 2016-07-04
WO2015062854A1 (en) 2015-05-07
US11022900B2 (en) 2021-06-01
CN105814491A (zh) 2016-07-27
KR101855220B1 (ko) 2018-05-08
US20160274472A1 (en) 2016-09-22
TW201520698A (zh) 2015-06-01

Similar Documents

Publication Publication Date Title
IL245318B (he) התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן
IL243854B (he) שיטה מטרולוגית והתקן, מערכת ליטוגרפית ושיטה להכנת התקן
IL246965B (he) שיטה ומכשיר מטרולוגי, מצע, מערכת ליטוגרפית ושיטה להכנת התקנים
IL235833A0 (he) שיטה ומכשיר מטרולוגיים, מצע, מערכת ליטוגרפית ושיטת לייצור התקן
IL245795B (he) שיטה, התקן ומצעים למטרולוגיה ליטוגרפית
IL235964A0 (he) מקור פוטוני, התקן מטרולוגי, מערכת ליתוגרפית ושיטה לייצור התקן
IL250588B (he) שיטה מטרולוגית, מטרה ומצע
IL242526B (he) התקן ושיטת בדיקה, מצעים לשימושם ושיטה ליצור מכשיר
KR101707220B9 (ko) 배터리 검사용 엑스레이 검사 장치 및 그에 의한 배터리 검사 방법
IL244593A0 (he) מדידת השהייה ומערכת ושיטה לבדיקה
PL2961531T3 (pl) Aparatura, metoda i system monitorowania rozwoju próbki hodowlanej
IL245915B (he) מקור הקרנה, התקן מטרולוגי, מערכת ליטוגרפית ושיטה להכנת התקן
EP3034236A4 (en) Temperature measurement method, and temperature measurement device
PL2860516T3 (pl) Urządzenie i sposób do sprawdzenia budowy podłoży mocowanych przylepnie
EP2868267A4 (en) BODY TEMPERATURE MEASURING DEVICE, BODY TEMPERATURE MEASUREMENT SYSTEM AND BODY TEMPERATURE MEASUREMENT METHOD
IL245885A0 (he) מכשיר ושיטות בחינה, מערכת ליטוגרפית ושיטה להכנת התקן
IL280148B (he) שיטות ומכשיר לסימולציה של אינטראקציה של קרינה עם מבנים, שיטות מטרולוגיות ומכשיר, שיטה להכנת התקן
FI20135876L (fi) Optometrinen instrumentti, jossa on kohdistusvälineet ja menetelmä optometrisen instrumentin kohdistamiseksi
EP2995281A4 (en) STENT, METHOD FOR THE PRODUCTION THEREOF AND DEVICE FOR THE PRODUCTION THEREOF
GB201314928D0 (en) Measurement device, measurement system, canister and measurement method
EP3054263A4 (en) DIMENSION MEASURING DEVICE, DIMENSION MEASURING METHOD, DIMENSION MEASURING SYSTEM, AND PROGRAM
HUE045848T2 (hu) Tárgyak, különösen végtagok kerületének mérésére szolgáló eszköz
SG11201610297UA (en) Test device for establishing, verifying, and/or managing accuracy
PL3015623T3 (pl) Sposób i urządzenie do montowania wieży podporowej
BR112015019224A2 (pt) aparelho, e método

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed