IL245318B - התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן - Google Patents
התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקןInfo
- Publication number
- IL245318B IL245318B IL245318A IL24531816A IL245318B IL 245318 B IL245318 B IL 245318B IL 245318 A IL245318 A IL 245318A IL 24531816 A IL24531816 A IL 24531816A IL 245318 B IL245318 B IL 245318B
- Authority
- IL
- Israel
- Prior art keywords
- substrates
- methods
- inspection apparatus
- device manufacturing
- lithographic system
- Prior art date
Links
- 238000007689 inspection Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/213—Exposing with the same light pattern different positions of the same surface at the same time
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361897562P | 2013-10-30 | 2013-10-30 | |
| PCT/EP2014/071910 WO2015062854A1 (en) | 2013-10-30 | 2014-10-13 | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL245318A0 IL245318A0 (he) | 2016-06-30 |
| IL245318B true IL245318B (he) | 2020-08-31 |
Family
ID=51691058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL245318A IL245318B (he) | 2013-10-30 | 2016-04-27 | התקן בדיקה ושיטות, מצעים בעלי מטרות מטרולוגיות, מערכת ליטוגרפים ושיטה להכנת התקן |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US9958791B2 (he) |
| KR (1) | KR101855220B1 (he) |
| CN (1) | CN105814491B (he) |
| IL (1) | IL245318B (he) |
| NL (1) | NL2013625A (he) |
| TW (1) | TWI554847B (he) |
| WO (1) | WO2015062854A1 (he) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7541201B2 (en) * | 2000-08-30 | 2009-06-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for determining overlay of structures having rotational or mirror symmetry |
| WO2015062854A1 (en) | 2013-10-30 | 2015-05-07 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
| TWI648515B (zh) * | 2013-11-15 | 2019-01-21 | 美商克萊譚克公司 | 計量目標及其計量量測、目標設計檔案、計量方法及以電腦為基礎之設備 |
| KR101901770B1 (ko) * | 2014-05-13 | 2018-09-27 | 에이에스엠엘 네델란즈 비.브이. | 계측에 사용하기 위한 기판 및 패터닝 디바이스, 계측 방법, 및 디바이스 제조 방법 |
| NL2017300A (en) | 2015-08-27 | 2017-03-01 | Asml Netherlands Bv | Method and apparatus for measuring a parameter of a lithographic process, substrate and patterning devices for use in the method |
| WO2017055072A1 (en) | 2015-10-02 | 2017-04-06 | Asml Netherlands B.V. | Metrology method and apparatus, computer program and lithographic system |
| US10416577B2 (en) * | 2015-12-03 | 2019-09-17 | Asml Holding N.V. | Position measuring method of an alignment target |
| CN108369389B (zh) | 2015-12-21 | 2021-06-18 | Asml荷兰有限公司 | 用于测量光刻设备的聚焦性能的方法和图案形成装置及设备、器件制造方法 |
| US10437158B2 (en) | 2015-12-31 | 2019-10-08 | Asml Netherlands B.V. | Metrology by reconstruction |
| WO2017178133A1 (en) | 2016-04-12 | 2017-10-19 | Asml Netherlands B.V. | Mark position determination method |
| US10451412B2 (en) | 2016-04-22 | 2019-10-22 | Kla-Tencor Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US10761023B2 (en) | 2016-10-14 | 2020-09-01 | Kla-Tencor Corporation | Diffraction-based focus metrology |
| CN106773526B (zh) * | 2016-12-30 | 2020-09-01 | 武汉华星光电技术有限公司 | 一种掩膜版，彩膜基板及其制作方法 |
| WO2018147938A1 (en) * | 2017-02-10 | 2018-08-16 | Kla-Tencor Corporation | Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements |
| JP2020509431A (ja) * | 2017-02-22 | 2020-03-26 | エーエスエムエル ネザーランズ ビー．ブイ． | コンピュータによる計測 |
| KR20200004381A (ko) * | 2017-05-08 | 2020-01-13 | 에이에스엠엘 네델란즈 비.브이. | 구조체를 측정하는 방법, 검사 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| EP3422102A1 (en) * | 2017-06-26 | 2019-01-02 | ASML Netherlands B.V. | Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method |
| CN111316168B (zh) * | 2017-10-31 | 2022-04-01 | Asml荷兰有限公司 | 量测设备、测量结构的方法、器件制造方法 |
| KR102695660B1 (ko) * | 2017-11-07 | 2024-08-14 | 에이에스엠엘 네델란즈 비.브이. | 관심 특성을 결정하는 계측 장치 및 방법 |
| EP3629086A1 (en) * | 2018-09-25 | 2020-04-01 | ASML Netherlands B.V. | Method and apparatus for determining a radiation beam intensity profile |
| CN113196172B (zh) * | 2018-10-08 | 2024-08-09 | Asml荷兰有限公司 | 量测方法、图案形成装置、设备和计算机程序 |
| EP3640735A1 (en) * | 2018-10-18 | 2020-04-22 | ASML Netherlands B.V. | Methods and apparatus for inspection of a structure and associated apparatuses |
| CN113661447A (zh) * | 2019-04-04 | 2021-11-16 | Asml荷兰有限公司 | 用于预测衬底图像的方法和设备 |
| CN111504210B (zh) * | 2020-04-01 | 2021-07-20 | 武汉大学 | 一种用于节距移动的测量基底及其制备方法、测量方法 |
| US11556062B2 (en) * | 2021-03-18 | 2023-01-17 | Kla Corporation | Sub-resolution imaging target |
| WO2023113850A1 (en) * | 2021-12-17 | 2023-06-22 | Kla Corporation | Overlay target design for improved target placement accuracy |
| WO2023198444A1 (en) * | 2022-04-15 | 2023-10-19 | Asml Netherlands B.V. | Metrology apparatus with configurable printed optical routing for parallel optical detection |
| TWI835363B (zh) * | 2022-10-24 | 2024-03-11 | 華邦電子股份有限公司 | 半導體晶圓、疊對偏移的處理裝置及其方法 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020006690A (ko) * | 1999-03-24 | 2002-01-24 | 시마무라 테루오 | 위치계측장치, 위치계측방법 및 노광장치, 노광방법그리고 중첩계측장치, 중첩계측방법 |
| US7068833B1 (en) * | 2000-08-30 | 2006-06-27 | Kla-Tencor Corporation | Overlay marks, methods of overlay mark design and methods of overlay measurements |
| US7317531B2 (en) * | 2002-12-05 | 2008-01-08 | Kla-Tencor Technologies Corporation | Apparatus and methods for detecting overlay errors using scatterometry |
| US7440105B2 (en) * | 2002-12-05 | 2008-10-21 | Kla-Tencor Technologies Corporation | Continuously varying offset mark and methods of determining overlay |
| US20050244729A1 (en) * | 2004-04-29 | 2005-11-03 | United Microelectronics Corp. | Method of measuring the overlay accuracy of a multi-exposure process |
| US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7528941B2 (en) * | 2006-06-01 | 2009-05-05 | Kla-Tencor Technolgies Corporation | Order selected overlay metrology |
| DE102007046850B4 (de) * | 2007-09-29 | 2014-05-22 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zum Bestimmen einer Überlagerungsgenauigkeit |
| NL1036245A1 (nl) * | 2007-12-17 | 2009-06-18 | Asml Netherlands Bv | Diffraction based overlay metrology tool and method of diffraction based overlay metrology. |
| NL1036597A1 (nl) | 2008-02-29 | 2009-09-01 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, and device manufacturing method. |
| CN101299132B (zh) * | 2008-05-27 | 2010-06-02 | 上海微电子装备有限公司 | 一种用于光刻设备对准系统的对准标记及其使用方法 |
| NL2004094A (en) | 2009-02-11 | 2010-08-12 | Asml Netherlands Bv | Inspection apparatus, lithographic apparatus, lithographic processing cell and inspection method. |
| US8848186B2 (en) * | 2009-07-22 | 2014-09-30 | Kla-Tencor Corporation | Angle-resolved antisymmetric scatterometry |
| CN102498441B (zh) | 2009-07-31 | 2015-09-16 | Asml荷兰有限公司 | 量测方法和设备、光刻系统以及光刻处理单元 |
| NL2005192A (en) | 2009-08-24 | 2011-02-28 | Asml Netherlands Bv | Metrology method and apparatus, lithographic apparatus, device manufacturing method and substrate. |
| NL2005459A (en) * | 2009-12-08 | 2011-06-09 | Asml Netherlands Bv | Inspection method and apparatus, and corresponding lithographic apparatus. |
| WO2012022584A1 (en) | 2010-08-18 | 2012-02-23 | Asml Netherlands B.V. | Substrate for use in metrology, metrology method and device manufacturing method |
| JP5661194B2 (ja) | 2010-11-12 | 2015-01-28 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジ方法及び装置、リソグラフィシステム並びにデバイス製造方法 |
| WO2012062501A1 (en) * | 2010-11-12 | 2012-05-18 | Asml Netherlands B.V. | Metrology method and apparatus, and device manufacturing method |
| US8455162B2 (en) | 2011-06-28 | 2013-06-04 | International Business Machines Corporation | Alignment marks for multi-exposure lithography |
| US8745546B2 (en) | 2011-12-29 | 2014-06-03 | Nanya Technology Corporation | Mask overlay method, mask, and semiconductor device using the same |
| KR101761735B1 (ko) | 2012-03-27 | 2017-07-26 | 에이에스엠엘 네델란즈 비.브이. | 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법 |
| NL2010458A (en) | 2012-04-16 | 2013-10-17 | Asml Netherlands Bv | Lithographic apparatus, substrate and device manufacturing method background. |
| US8817273B2 (en) * | 2012-04-24 | 2014-08-26 | Nanometrics Incorporated | Dark field diffraction based overlay |
| JP6077647B2 (ja) | 2012-05-29 | 2017-02-08 | エーエスエムエル ネザーランズ ビー．ブイ． | メトロロジー方法及び装置、基板、リソグラフィシステム並びにデバイス製造方法 |
| US8913237B2 (en) * | 2012-06-26 | 2014-12-16 | Kla-Tencor Corporation | Device-like scatterometry overlay targets |
| US9733572B2 (en) | 2013-03-20 | 2017-08-15 | Asml Netherlands B.V. | Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method |
| WO2015062854A1 (en) | 2013-10-30 | 2015-05-07 | Asml Netherlands B.V. | Inspection apparatus and methods, substrates having metrology targets, lithographic system and device manufacturing method |
-
2014
- 2014-10-13 WO PCT/EP2014/071910 patent/WO2015062854A1/en active Application Filing
- 2014-10-13 US US15/032,507 patent/US9958791B2/en active Active
- 2014-10-13 CN CN201480067198.3A patent/CN105814491B/zh active Active
- 2014-10-13 KR KR1020167014377A patent/KR101855220B1/ko active IP Right Grant
- 2014-10-13 NL NL2013625A patent/NL2013625A/en not_active Application Discontinuation
- 2014-10-29 TW TW103137484A patent/TWI554847B/zh active
-
2016
- 2016-04-27 IL IL245318A patent/IL245318B/he active IP Right Grant
-
2018
- 2018-04-24 US US15/961,377 patent/US10761432B2/en active Active
-
2020
- 2020-07-16 US US16/931,002 patent/US11022900B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20160274472A1 (en) | 2016-09-22 |
| US20200348605A1 (en) | 2020-11-05 |
| IL245318A0 (he) | 2016-06-30 |
| WO2015062854A1 (en) | 2015-05-07 |
| KR101855220B1 (ko) | 2018-05-08 |
| CN105814491A (zh) | 2016-07-27 |
| US11022900B2 (en) | 2021-06-01 |
| TWI554847B (zh) | 2016-10-21 |
| US9958791B2 (en) | 2018-05-01 |
| US10761432B2 (en) | 2020-09-01 |
| KR20160078479A (ko) | 2016-07-04 |
| NL2013625A (en) | 2015-05-04 |
| US20180239263A1 (en) | 2018-08-23 |
| TW201520698A (zh) | 2015-06-01 |
| CN105814491B (zh) | 2017-12-05 |
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