IL215017A - A preparation containing a source of metal ions and a concealer, its use for metal coating on substrates containing sub-micron sized keyboards and a process for this coating - Google Patents
A preparation containing a source of metal ions and a concealer, its use for metal coating on substrates containing sub-micron sized keyboards and a process for this coatingInfo
- Publication number
- IL215017A IL215017A IL215017A IL21501711A IL215017A IL 215017 A IL215017 A IL 215017A IL 215017 A IL215017 A IL 215017A IL 21501711 A IL21501711 A IL 21501711A IL 215017 A IL215017 A IL 215017A
- Authority
- IL
- Israel
- Prior art keywords
- depositing
- metal
- substrates
- features
- composition
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title 2
- 239000003795 chemical substances by application Substances 0.000 title 1
- 239000002184 metal Substances 0.000 title 1
- 229910021645 metal ion Inorganic materials 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP09157542 | 2009-04-07 | ||
| US25632909P | 2009-10-30 | 2009-10-30 | |
| PCT/EP2010/054108 WO2010115756A1 (en) | 2009-04-07 | 2010-03-29 | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IL215017A0 IL215017A0 (en) | 2011-12-01 |
| IL215017A true IL215017A (en) | 2016-03-31 |
Family
ID=42935667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL215017A IL215017A (en) | 2009-04-07 | 2011-09-07 | A preparation containing a source of metal ions and a concealer, its use for metal coating on substrates containing sub-micron sized keyboards and a process for this coating |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20120027948A1 (OSRAM) |
| EP (1) | EP2417284B1 (OSRAM) |
| JP (1) | JP5702360B2 (OSRAM) |
| KR (2) | KR20170034948A (OSRAM) |
| CN (2) | CN102369315B (OSRAM) |
| IL (1) | IL215017A (OSRAM) |
| MY (1) | MY157214A (OSRAM) |
| RU (1) | RU2542178C2 (OSRAM) |
| SG (2) | SG10201401324YA (OSRAM) |
| TW (1) | TWI489012B (OSRAM) |
| WO (1) | WO2010115756A1 (OSRAM) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200632147A (OSRAM) | 2004-11-12 | 2006-09-16 | ||
| CN102597329B (zh) | 2009-07-30 | 2015-12-16 | 巴斯夫欧洲公司 | 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物 |
| TWI500823B (zh) | 2010-03-18 | 2015-09-21 | Basf Se | 包含整平劑之金屬電鍍用組合物 |
| MY170653A (en) | 2010-12-21 | 2019-08-23 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2468927A1 (en) | 2010-12-21 | 2012-06-27 | Basf Se | Composition for metal electroplating comprising leveling agent |
| EP2530102A1 (en) | 2011-06-01 | 2012-12-05 | Basf Se | Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias |
| SG194983A1 (en) | 2011-06-01 | 2013-12-30 | Basf Se | Composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias and interconnect features |
| US9243339B2 (en) * | 2012-05-25 | 2016-01-26 | Trevor Pearson | Additives for producing copper electrodeposits having low oxygen content |
| MY172822A (en) | 2012-11-09 | 2019-12-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| CN108051879B (zh) * | 2012-11-21 | 2020-09-08 | 3M创新有限公司 | 光学扩散膜及其制备方法 |
| JP6216522B2 (ja) * | 2013-03-14 | 2017-10-18 | 大日本印刷株式会社 | インターポーザー基板の製造方法。 |
| JP6457881B2 (ja) * | 2015-04-22 | 2019-01-23 | 新光電気工業株式会社 | 配線基板及びその製造方法 |
| WO2018057707A1 (en) | 2016-09-22 | 2018-03-29 | Macdermid Enthone Inc. | Copper electrodeposition in microelectronics |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| US11926918B2 (en) * | 2016-12-20 | 2024-03-12 | Basf Se | Composition for metal plating comprising suppressing agent for void free filing |
| EP3415664B1 (en) * | 2017-06-16 | 2019-09-18 | ATOTECH Deutschland GmbH | Aqueous acidic copper electroplating bath and method for electrolytically depositing of a copper coating |
| EP3679179B1 (en) | 2017-09-04 | 2023-10-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| KR102769982B1 (ko) * | 2018-04-20 | 2025-02-18 | 바스프 에스이 | 억제제를 포함하는 주석 또는 주석 합금 전기도금을 위한 조성물 |
| US20220333262A1 (en) | 2019-09-27 | 2022-10-20 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| JP7446331B2 (ja) * | 2020-04-01 | 2024-03-08 | 住友電気工業株式会社 | フレキシブルプリント配線板及びその製造方法 |
| WO2021197950A1 (en) | 2020-04-03 | 2021-10-07 | Basf Se | Composition for copper bump electrodeposition comprising a polyaminoamide type leveling agent |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| WO2023052254A1 (en) | 2021-10-01 | 2023-04-06 | Basf Se | Composition for copper electrodeposition comprising a polyaminoamide type leveling agent |
| TWI861453B (zh) | 2021-12-21 | 2024-11-11 | 隆輝實業股份有限公司 | 環保無廢料的發泡鞋材製程方法，及其鞋材半成品與鞋體成品 |
| KR20250036166A (ko) | 2022-07-07 | 2025-03-13 | 바스프 에스이 | 구리 나노트윈 전착을 위한 폴리아미노아미드 유형 화합물을 포함하는 조성물의 용도 |
| KR20250124348A (ko) | 2022-12-19 | 2025-08-19 | 바스프 에스이 | 구리 나노트윈 전착용 조성물 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139425A (en) * | 1978-04-05 | 1979-02-13 | R. O. Hull & Company, Inc. | Composition, plating bath, and method for electroplating tin and/or lead |
| US4505839A (en) | 1981-05-18 | 1985-03-19 | Petrolite Corporation | Polyalkanolamines |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US5051154A (en) | 1988-08-23 | 1991-09-24 | Shipley Company Inc. | Additive for acid-copper electroplating baths to increase throwing power |
| DE4003243A1 (de) | 1990-02-03 | 1991-08-08 | Basf Ag | Verwendung von trialkanolaminpolyethern als demulgatoren von oel-in-wasser-emulsionen |
| DE19622221A1 (de) * | 1996-06-03 | 1997-12-04 | Henkel Kgaa | Verfahren zur Beschichtung elektrisch leitfähiger Substrate |
| US6444110B2 (en) * | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US20040045832A1 (en) * | 1999-10-14 | 2004-03-11 | Nicholas Martyak | Electrolytic copper plating solutions |
| JP3610434B2 (ja) * | 2002-02-06 | 2005-01-12 | 第一工業製薬株式会社 | 非イオン界面活性剤 |
| JP2003328179A (ja) * | 2002-05-10 | 2003-11-19 | Ebara Udylite Kk | 酸性銅めっき浴用添加剤及び該添加剤を含有する酸性銅めっき浴並びに該めっき浴を用いるめっき方法 |
| CN1190521C (zh) * | 2002-07-05 | 2005-02-23 | 旺宏电子股份有限公司 | 铜电镀溶液及铜电镀方法 |
| RU2237755C2 (ru) * | 2002-07-25 | 2004-10-10 | Калининградский государственный университет | Электролит меднения стальных деталей |
| US6833479B2 (en) | 2002-08-16 | 2004-12-21 | Cognis Corporation | Antimisting agents |
| JP3804788B2 (ja) * | 2002-11-18 | 2006-08-02 | 荏原ユージライト株式会社 | クローズド酸性銅めっきシステムおよびこれに利用される耐温性酸性銅めっき浴 |
| US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
| US20050072683A1 (en) | 2003-04-03 | 2005-04-07 | Ebara Corporation | Copper plating bath and plating method |
| US20050045485A1 (en) | 2003-09-03 | 2005-03-03 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method to improve copper electrochemical deposition |
| TW200632147A (OSRAM) * | 2004-11-12 | 2006-09-16 | ||
| US20060213780A1 (en) * | 2005-03-24 | 2006-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Electroplating composition and method |
| RU2334831C2 (ru) * | 2006-10-31 | 2008-09-27 | Федеральное государственное унитарное предприятие "Калужский научно-исследовательский институт телемеханических устройств" | Электролит меднения |
| EP1978051B1 (en) * | 2007-04-03 | 2012-02-22 | Rohm and Haas Electronic Materials, L.L.C. | Metal plating compositions and methods |
| CU23716A1 (es) * | 2008-09-30 | 2011-10-05 | Ct Ingenieria Genetica Biotech | Péptido antagonista de la actividad de la interleucina-15 |
| US8388824B2 (en) * | 2008-11-26 | 2013-03-05 | Enthone Inc. | Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers |
| JP5722872B2 (ja) * | 2009-04-07 | 2015-05-27 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 |
-
2010
- 2010-03-29 SG SG10201401324YA patent/SG10201401324YA/en unknown
- 2010-03-29 WO PCT/EP2010/054108 patent/WO2010115756A1/en not_active Ceased
- 2010-03-29 SG SG2011064094A patent/SG174265A1/en unknown
- 2010-03-29 CN CN201080015460.1A patent/CN102369315B/zh active Active
- 2010-03-29 KR KR1020177007866A patent/KR20170034948A/ko not_active Ceased
- 2010-03-29 RU RU2011144618/02A patent/RU2542178C2/ru not_active IP Right Cessation
- 2010-03-29 JP JP2012503962A patent/JP5702360B2/ja active Active
- 2010-03-29 CN CN201410322845.2A patent/CN104195602B/zh active Active
- 2010-03-29 EP EP10711239.3A patent/EP2417284B1/en active Active
- 2010-03-29 MY MYPI2011004270A patent/MY157214A/en unknown
- 2010-03-29 US US13/259,482 patent/US20120027948A1/en not_active Abandoned
- 2010-03-29 KR KR1020117026527A patent/KR20120005023A/ko not_active Ceased
- 2010-04-06 TW TW099110629A patent/TWI489012B/zh active
-
2011
- 2011-09-07 IL IL215017A patent/IL215017A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| MY157214A (en) | 2016-05-13 |
| IL215017A0 (en) | 2011-12-01 |
| KR20170034948A (ko) | 2017-03-29 |
| CN104195602A (zh) | 2014-12-10 |
| WO2010115756A1 (en) | 2010-10-14 |
| US20120027948A1 (en) | 2012-02-02 |
| SG174265A1 (en) | 2011-10-28 |
| CN102369315A (zh) | 2012-03-07 |
| CN104195602B (zh) | 2017-05-31 |
| RU2542178C2 (ru) | 2015-02-20 |
| KR20120005023A (ko) | 2012-01-13 |
| TW201042096A (en) | 2010-12-01 |
| RU2011144618A (ru) | 2013-05-20 |
| CN102369315B (zh) | 2014-08-13 |
| TWI489012B (zh) | 2015-06-21 |
| JP5702360B2 (ja) | 2015-04-15 |
| EP2417284A1 (en) | 2012-02-15 |
| JP2012522898A (ja) | 2012-09-27 |
| EP2417284B1 (en) | 2015-01-14 |
| SG10201401324YA (en) | 2014-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| IL215017A (en) | A preparation containing a source of metal ions and a concealer, its use for metal coating on substrates containing sub-micron sized keyboards and a process for this coating | |
| ZA200908140B (en) | Coating composition for metal substrates | |
| ZA200905365B (en) | Method for preparing particles comprising metal oxide coating and particles with metal oxide coating | |
| ZA201007246B (en) | Process for coating metallic surfaces with a passivating agent,the passivating agent and its use | |
| EP1992718A4 (en) | METAL SURFACE TREATMENT AGENT | |
| ZA200807990B (en) | Composition for metal surface treatment, metal surface treatment method, and metal material | |
| ZA200807991B (en) | Composition for metal surface treatment, metal surface treatment method, and metal material | |
| BRPI0819294A2 (pt) | Método de produção de artigo revestido incluindo tratamento de feixe de íon de película protetora de óxido de metal | |
| EP2088131A4 (en) | ANTIBACTERIAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR | |
| TWI372790B (en) | Metal surface treatment composition | |
| PL2411162T3 (pl) | Samodyspergowalny powlekany proszek tlenku metalu i sposób wytwarzania oraz zastosowanie | |
| WO2009154903A3 (en) | Methods for processing substrates having an antimicrobial coating | |
| PL2296830T3 (pl) | Sposób powlekania taśm metalowych | |
| EP1997824B8 (en) | Perfluoropolyether-modified aminosilane, surface treating agent, and aminosilane-coated article | |
| SG175072A1 (en) | Metal particle transfer article, metal modified substrate, and method of making and using the same | |
| PL2487231T3 (pl) | Środek do obróbki twardych powierzchni | |
| PT2310549T (pt) | Sistema de revestimento, peça de trabalho revestida e método para produzir a mesma | |
| EP2581471A4 (en) | Inorganic chromium-free metal surface treatment agent | |
| TWI367239B (en) | Hard coating composition for metal material | |
| LT2435601T (lt) | Būdas ir kompozicija metalo paviršių apdorojimui | |
| EP2649219A4 (en) | Metal pretreatment composition containing zirconium, copper, and metal chelating agents and related coatings on metal substrates | |
| EP2045319B8 (en) | Coated detergent composition and manufacture process | |
| IL212388A0 (en) | Solubilizer for metal ions and methods of producing the same | |
| EP2147128A4 (en) | METHOD FOR PRODUCING PURE METALIC INDIUM FROM ZINC OXIDE AND / OR A SOLUTION CONTAINING THIS METAL | |
| EP2226407A4 (en) | METHOD FOR MANUFACTURING METALLIC FILM, METALLIC FILM, AND USE OF METALLIC FILM |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed |