IL214344A0 - Solid-state radiation detector with improved sensitivity - Google Patents
Solid-state radiation detector with improved sensitivityInfo
- Publication number
- IL214344A0 IL214344A0 IL214344A IL21434411A IL214344A0 IL 214344 A0 IL214344 A0 IL 214344A0 IL 214344 A IL214344 A IL 214344A IL 21434411 A IL21434411 A IL 21434411A IL 214344 A0 IL214344 A0 IL 214344A0
- Authority
- IL
- Israel
- Prior art keywords
- solid
- radiation detector
- improved sensitivity
- state radiation
- state
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/301—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to very short wavelength, e.g. being sensitive to X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/804—Containers or encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/364,042 US8614423B2 (en) | 2009-02-02 | 2009-02-02 | Solid-state radiation detector with improved sensitivity |
| PCT/US2010/021142 WO2010088066A2 (en) | 2009-02-02 | 2010-01-15 | Solid-state radiation detector with improved sensitivity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL214344A0 true IL214344A0 (en) | 2011-09-27 |
Family
ID=42396283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL214344A IL214344A0 (en) | 2009-02-02 | 2011-07-28 | Solid-state radiation detector with improved sensitivity |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8614423B2 (enExample) |
| EP (1) | EP2392033A4 (enExample) |
| JP (1) | JP2012516997A (enExample) |
| IL (1) | IL214344A0 (enExample) |
| WO (1) | WO2010088066A2 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8896075B2 (en) * | 2008-01-23 | 2014-11-25 | Ev Products, Inc. | Semiconductor radiation detector with thin film platinum alloyed electrode |
| JP4811520B2 (ja) * | 2009-02-20 | 2011-11-09 | 住友金属鉱山株式会社 | 半導体装置用基板の製造方法、半導体装置の製造方法、半導体装置用基板及び半導体装置 |
| JP5485197B2 (ja) * | 2011-02-10 | 2014-05-07 | 株式会社日立製作所 | 放射線計測装置および核医学診断装置 |
| US9000389B2 (en) * | 2011-11-22 | 2015-04-07 | General Electric Company | Radiation detectors and methods of fabricating radiation detectors |
| US9006010B2 (en) * | 2011-11-22 | 2015-04-14 | General Electric Company | Radiation detectors and methods of fabricating radiation detectors |
| JP5753802B2 (ja) * | 2012-01-27 | 2015-07-22 | 株式会社日立製作所 | 半導体放射線検出器および核医学診断装置 |
| CN102798882B (zh) * | 2012-05-03 | 2016-07-06 | 西北核技术研究所 | 一种压接结构的电流型czt探测器 |
| EP2952299A1 (en) * | 2014-06-05 | 2015-12-09 | Aldebaran Robotics | Standby mode of a humanoid robot |
| JP6316960B2 (ja) | 2014-07-03 | 2018-04-25 | Ｊｘ金属株式会社 | 放射線検出器用ｕｂｍ電極構造体、放射線検出器及びその製造方法 |
| US10153321B2 (en) | 2014-11-20 | 2018-12-11 | Koninklijke Philips N.V. | Radiation detector core assembly and method for constructing the same |
| CN105977315B (zh) * | 2016-07-01 | 2017-05-17 | 京东方科技集团股份有限公司 | 感光器件及其制备方法、光敏探测器 |
| US10203420B2 (en) | 2017-05-11 | 2019-02-12 | Redlen Technologies, Inc. | Dual sided tape attachment to cathode electrode of radiation detector |
| CN108767052A (zh) * | 2018-05-31 | 2018-11-06 | 苏州西奇狄材料科技有限公司 | 无载流子注入的新型czt辐射探测器结构及制备方法 |
| US11378701B2 (en) | 2019-10-08 | 2022-07-05 | Redlen Technologies, Inc. | Low dark current radiation detector and method of making the same |
| US11733408B2 (en) | 2020-04-28 | 2023-08-22 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
| US20230375729A1 (en) * | 2022-05-20 | 2023-11-23 | Redlen Technologies, Inc. | Radiation detector having asymmetric contacts |
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| US4301368A (en) | 1980-01-31 | 1981-11-17 | Hospital Physics Oy | Ionizing radiation detector adapted for use with tomography systems |
| DE3707294A1 (de) | 1987-03-06 | 1988-09-15 | Helmut Cloth | Luftdruckabhaengige ausloesevorrichtung fuer einen fallschirm |
| JP2733930B2 (ja) | 1987-09-18 | 1998-03-30 | 株式会社島津製作所 | 半導体放射線検出素子 |
| JPH0823695B2 (ja) | 1988-12-27 | 1996-03-06 | タムラ化研株式会社 | 感光性樹脂組成物 |
| JPH06112515A (ja) | 1992-09-29 | 1994-04-22 | Japan Energy Corp | 半導体放射線検出器およびその製造方法 |
| US5368882A (en) | 1993-08-25 | 1994-11-29 | Minnesota Mining And Manufacturing Company | Process for forming a radiation detector |
| JPH07325157A (ja) | 1994-05-31 | 1995-12-12 | Japan Energy Corp | 半導体放射線検出器 |
| US5608188A (en) | 1994-09-02 | 1997-03-04 | Motorola, Inc. | Multi compartment electromagnetic energy shield |
| US5616925A (en) * | 1995-06-07 | 1997-04-01 | Santa Barbara Research Center | Gamma ray detector with improved resolution and method of fabrication |
| US6362484B1 (en) | 1995-07-14 | 2002-03-26 | Imec Vzw | Imager or particle or radiation detector and method of manufacturing the same |
| US6037595A (en) | 1995-10-13 | 2000-03-14 | Digirad Corporation | Radiation detector with shielding electrode |
| US6046454A (en) | 1995-10-13 | 2000-04-04 | Digirad Corporation | Semiconductor radiation detector with enhanced charge collection |
| US5677539A (en) | 1995-10-13 | 1997-10-14 | Digirad | Semiconductor radiation detector with enhanced charge collection |
| US6410922B1 (en) | 1995-11-29 | 2002-06-25 | Konstantinos Evangelos Spartiotis | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
| GB2307785B (en) | 1995-11-29 | 1998-04-29 | Simage Oy | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
| IL119075A (en) | 1996-08-14 | 1999-11-30 | Imarad Imaging Systems Ltd | Semiconductor detector |
| US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| FR2759837B1 (fr) | 1997-02-14 | 2001-10-19 | Commissariat Energie Atomique | Dispositif et procede de traitement de signaux d'un detecteur de rayonnements a semiconducteurs |
| US5933706A (en) | 1997-05-28 | 1999-08-03 | James; Ralph | Method for surface treatment of a cadmium zinc telluride crystal |
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| US6175120B1 (en) | 1998-05-08 | 2001-01-16 | The Regents Of The University Of Michigan | High-resolution ionization detector and array of such detectors |
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| US6781132B2 (en) * | 2001-08-10 | 2004-08-24 | The Regents Of The University Of Michigan | Collimated radiation detector assembly, array of collimated radiation detectors and collimated radiation detector module |
| KR100483314B1 (ko) | 2002-03-23 | 2005-04-15 | 학교법인 인제학원 | 디지털 엑스레이 이미지 디텍터 |
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| TWI303491B (en) | 2004-02-20 | 2008-11-21 | Toshiba Kk | Semiconductor relay apparatus and wiring board fabrication method |
| JP3828896B2 (ja) | 2004-03-11 | 2006-10-04 | 株式会社日立製作所 | 陽電子放出型断層撮影装置 |
| US7196332B2 (en) * | 2004-05-04 | 2007-03-27 | General Electric Company | Monolithic x-ray detector with staggered detection areas |
| DE112005002398T5 (de) | 2004-09-30 | 2007-08-16 | Stanford University, Palo Alto | Hochauflösender Halbleiterkristall-Bildgeber |
| JP2006237186A (ja) | 2005-02-24 | 2006-09-07 | Mitsubishi Electric Corp | 半導体受光素子およびその製造方法 |
| WO2007100538A2 (en) * | 2006-02-22 | 2007-09-07 | Redlen Technologies | Method of making segmented contacts for radiation detectors using direct photolithography |
| CA2541256A1 (en) | 2006-02-22 | 2007-08-22 | Redlen Technologies Inc. | Shielding electrode for monolithic radiation detector |
| US7898042B2 (en) * | 2006-11-07 | 2011-03-01 | Cbrite Inc. | Two-terminal switching devices and their methods of fabrication |
| US7589324B2 (en) | 2006-12-21 | 2009-09-15 | Redlen Technologies | Use of solder mask as a protective coating for radiation detector |
| US7462833B2 (en) | 2007-04-17 | 2008-12-09 | Redlen Technologies | Multi-functional cathode packaging design for solid-state radiation detectors |
-
2009
- 2009-02-02 US US12/364,042 patent/US8614423B2/en active Active
-
2010
- 2010-01-15 JP JP2011548042A patent/JP2012516997A/ja not_active Withdrawn
- 2010-01-15 WO PCT/US2010/021142 patent/WO2010088066A2/en not_active Ceased
- 2010-01-15 EP EP10736204.8A patent/EP2392033A4/en not_active Withdrawn
-
2011
- 2011-07-28 IL IL214344A patent/IL214344A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010088066A3 (en) | 2010-10-28 |
| EP2392033A2 (en) | 2011-12-07 |
| US20100193694A1 (en) | 2010-08-05 |
| EP2392033A4 (en) | 2017-04-19 |
| US8614423B2 (en) | 2013-12-24 |
| JP2012516997A (ja) | 2012-07-26 |
| WO2010088066A2 (en) | 2010-08-05 |
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