IL166611A0 - Pyrrolyl complexes of copper for copper metal deposition - Google Patents
Pyrrolyl complexes of copper for copper metal depositionInfo
- Publication number
- IL166611A0 IL166611A0 IL16661105A IL16661105A IL166611A0 IL 166611 A0 IL166611 A0 IL 166611A0 IL 16661105 A IL16661105 A IL 16661105A IL 16661105 A IL16661105 A IL 16661105A IL 166611 A0 IL166611 A0 IL 166611A0
- Authority
- IL
- Israel
- Prior art keywords
- copper
- pyrrolyl
- complexes
- metal deposition
- copper metal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/30—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members
- C07D207/32—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
- C07D207/33—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms with substituted hydrocarbon radicals, directly attached to ring carbon atoms
- C07D207/335—Radicals substituted by nitrogen atoms not forming part of a nitro radical
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/30—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members
- C07D207/32—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D207/00—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D207/02—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom
- C07D207/30—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members
- C07D207/32—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms
- C07D207/33—Heterocyclic compounds containing five-membered rings not condensed with other rings, with one nitrogen atom as the only ring hetero atom with only hydrogen or carbon atoms directly attached to the ring nitrogen atom having two double bonds between ring members or between ring members and non-ring members with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to ring carbon atoms with substituted hydrocarbon radicals, directly attached to ring carbon atoms
- C07D207/333—Radicals substituted by oxygen or sulfur atoms
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Pyrrole Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40221702P | 2002-08-09 | 2002-08-09 | |
PCT/US2003/024117 WO2004015164A1 (fr) | 2002-08-09 | 2003-07-31 | Complexes pyrrolyle de cuivre utilises pour effectuer un depot metallique de cuivre |
Publications (1)
Publication Number | Publication Date |
---|---|
IL166611A0 true IL166611A0 (en) | 2006-01-15 |
Family
ID=31715809
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL16661105A IL166611A0 (en) | 2002-08-09 | 2005-01-31 | Pyrrolyl complexes of copper for copper metal deposition |
Country Status (9)
Country | Link |
---|---|
US (1) | US20050240028A1 (fr) |
EP (1) | EP1527207A1 (fr) |
JP (1) | JP2005535706A (fr) |
KR (1) | KR20060012253A (fr) |
CN (1) | CN1688741A (fr) |
AU (1) | AU2003257996A1 (fr) |
IL (1) | IL166611A0 (fr) |
TW (1) | TW200413556A (fr) |
WO (1) | WO2004015164A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100867038B1 (ko) * | 2005-03-02 | 2008-11-04 | 삼성전기주식회사 | 커패시터 내장형 인쇄회로기판 및 그 제조방법 |
US20090130466A1 (en) * | 2007-11-16 | 2009-05-21 | Air Products And Chemicals, Inc. | Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor |
US8859785B2 (en) * | 2009-05-29 | 2014-10-14 | Air Products And Chemicals, Inc. | Volatile group 2 metal precursors |
JP2014501847A (ja) * | 2010-11-03 | 2014-01-23 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | マンガン含有フィルムの堆積のためのビス−ピロール−2−アルジミネートマンガン前駆体 |
TWI551708B (zh) * | 2011-07-22 | 2016-10-01 | 應用材料股份有限公司 | 使用金屬前驅物之原子層沉積法 |
US8691985B2 (en) | 2011-07-22 | 2014-04-08 | American Air Liquide, Inc. | Heteroleptic pyrrolecarbaldimine precursors |
US20130078455A1 (en) * | 2011-09-23 | 2013-03-28 | Applied Materials, Inc. | Metal-Aluminum Alloy Films From Metal PCAI Precursors And Aluminum Precursors |
US8431719B1 (en) | 2011-12-30 | 2013-04-30 | American Air Liquide, Inc. | Heteroleptic pyrrolecarbaldimine precursors |
WO2015103358A1 (fr) | 2014-01-05 | 2015-07-09 | Applied Materials, Inc. | Depot de film par depot spatial de couche atomique ou par depot chimique en phase vapeur pulsee |
US10954406B2 (en) * | 2015-06-11 | 2021-03-23 | National Research Council Of Canada | Preparation of high conductivity copper films |
EP3715351A1 (fr) * | 2019-03-28 | 2020-09-30 | Umicore Ag & Co. Kg | Complexes métalliques destinés au dépôt en couches minces en phase gazeuse |
CN112778186B (zh) * | 2021-01-29 | 2022-05-31 | 西南大学 | 吡咯类化合物的合成方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3594216A (en) * | 1969-06-19 | 1971-07-20 | Westinghouse Electric Corp | Vapor phase deposition of metal from a metal-organic beta-ketoamine chelate |
PL173979B1 (pl) * | 1993-08-13 | 1998-05-29 | Univ Warszawski | Nowe metaliczne kompleksy pochodnych pirolu oraz sposób wytwarzania nowych metallcznych kompleksów pochodnych pirolu |
US5464666A (en) * | 1995-02-06 | 1995-11-07 | Air Products And Chemicals, Inc. | Process for chemical vapor codeposition of copper and aluminum alloys |
KR100443766B1 (ko) * | 2000-07-04 | 2004-08-09 | 미쓰이 가가쿠 가부시키가이샤 | 극성올레핀 공중합체의 제조방법 및 이 방법에 의하여얻어진 극성올레핀 공중합체 |
-
2003
- 2003-07-31 JP JP2004527706A patent/JP2005535706A/ja active Pending
- 2003-07-31 KR KR1020057002298A patent/KR20060012253A/ko not_active Application Discontinuation
- 2003-07-31 AU AU2003257996A patent/AU2003257996A1/en not_active Abandoned
- 2003-07-31 CN CNA038240475A patent/CN1688741A/zh active Pending
- 2003-07-31 EP EP03784875A patent/EP1527207A1/fr not_active Withdrawn
- 2003-07-31 US US10/523,493 patent/US20050240028A1/en not_active Abandoned
- 2003-07-31 WO PCT/US2003/024117 patent/WO2004015164A1/fr not_active Application Discontinuation
- 2003-08-08 TW TW092121849A patent/TW200413556A/zh unknown
-
2005
- 2005-01-31 IL IL16661105A patent/IL166611A0/xx unknown
Also Published As
Publication number | Publication date |
---|---|
TW200413556A (en) | 2004-08-01 |
US20050240028A1 (en) | 2005-10-27 |
CN1688741A (zh) | 2005-10-26 |
WO2004015164A1 (fr) | 2004-02-19 |
AU2003257996A1 (en) | 2004-02-25 |
KR20060012253A (ko) | 2006-02-07 |
EP1527207A1 (fr) | 2005-05-04 |
JP2005535706A (ja) | 2005-11-24 |
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