IL162097A0 - Differential stress reduction in thin films - Google Patents

Differential stress reduction in thin films

Info

Publication number
IL162097A0
IL162097A0 IL16209702A IL16209702A IL162097A0 IL 162097 A0 IL162097 A0 IL 162097A0 IL 16209702 A IL16209702 A IL 16209702A IL 16209702 A IL16209702 A IL 16209702A IL 162097 A0 IL162097 A0 IL 162097A0
Authority
IL
Israel
Prior art keywords
crystalline material
differential stress
predominant
thin films
stress reduction
Prior art date
Application number
IL16209702A
Other languages
English (en)
Original Assignee
Silverbrook Res Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silverbrook Res Pty Ltd filed Critical Silverbrook Res Pty Ltd
Publication of IL162097A0 publication Critical patent/IL162097A0/xx

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/0065—Mechanical properties
    • B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0161—Controlling physical properties of the material
    • B81C2201/0163—Controlling internal stress of deposited layers
    • B81C2201/017—Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
  • Physical Vapour Deposition (AREA)
  • Measurement Of Force In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Paper (AREA)
  • Die Bonding (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
IL16209702A 2001-11-30 2002-05-02 Differential stress reduction in thin films IL162097A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AUPR9197A AUPR919701A0 (en) 2001-11-30 2001-11-30 Method and apparatus (mems18)
PCT/AU2002/000537 WO2003045836A1 (en) 2001-11-30 2002-05-02 Differential stress reduction in thin films

Publications (1)

Publication Number Publication Date
IL162097A0 true IL162097A0 (en) 2005-11-20

Family

ID=3833006

Family Applications (2)

Application Number Title Priority Date Filing Date
IL16209702A IL162097A0 (en) 2001-11-30 2002-05-02 Differential stress reduction in thin films
IL162097A IL162097A (en) 2001-11-30 2004-05-20 Differential stress reduction in thin films

Family Applications After (1)

Application Number Title Priority Date Filing Date
IL162097A IL162097A (en) 2001-11-30 2004-05-20 Differential stress reduction in thin films

Country Status (8)

Country Link
EP (1) EP1461286B1 (de)
KR (1) KR20040068566A (de)
AT (1) ATE369312T1 (de)
AU (1) AUPR919701A0 (de)
CA (1) CA2467174C (de)
DE (1) DE60221710T2 (de)
IL (2) IL162097A0 (de)
WO (1) WO2003045836A1 (de)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61225816A (ja) * 1985-03-29 1986-10-07 Sharp Corp 化合物半導体装置の製造方法
JPH02266516A (ja) * 1989-04-07 1990-10-31 Hitachi Cable Ltd ＧａＡｌＡｓエピタキシャルウェハの製造方法
FR2661040A1 (fr) * 1990-04-13 1991-10-18 Thomson Csf Procede d'adaptation entre deux materiaux semiconducteurs cristallises, et dispositif semiconducteur.
DE69625265T2 (de) * 1995-03-28 2003-09-04 Texas Instruments Inc., Dallas Halbleiterstrukturen
US6087726A (en) * 1999-03-01 2000-07-11 Lsi Logic Corporation Metal interconnect stack for integrated circuit structure
US6114198A (en) * 1999-05-07 2000-09-05 Vanguard International Semiconductor Corporation Method for forming a high surface area capacitor electrode for DRAM applications
FR2797093B1 (fr) * 1999-07-26 2001-11-02 France Telecom Procede de realisation d'un dispositif comprenant un empilement de plans de boites quantiques sur un substrat de silicium ou germanium monocristallin

Also Published As

Publication number Publication date
DE60221710D1 (de) 2007-09-20
IL162097A (en) 2010-02-17
AUPR919701A0 (en) 2001-12-20
EP1461286A1 (de) 2004-09-29
ATE369312T1 (de) 2007-08-15
WO2003045836A1 (en) 2003-06-05
DE60221710T2 (de) 2008-06-05
KR20040068566A (ko) 2004-07-31
EP1461286B1 (de) 2007-08-08
CA2467174A1 (en) 2003-06-05
EP1461286A4 (de) 2006-01-04
CA2467174C (en) 2008-02-12

Similar Documents

Publication Publication Date Title
WO2004090201A3 (fr) Procede de fabrication de cristaux monocristallins
TW200605163A (en) Fabrication of crystalline materials over substrates
WO2006136929A3 (en) High colour diamond layer
WO2006135662A3 (en) Perovskite-based thin film structures on miscut semiconductor substrates
WO2003052174A3 (en) Boron doped diamond
TW200603247A (en) SOI substrate and method for manufacturing the same
WO2007108983A3 (en) Strained silicon with elastic edge relaxation
TW200516655A (en) Silicon crystallization using self-assembled monolayers
WO1999063580A3 (en) Compound semiconductor structure with lattice and polarity matched heteroepitaxial layers
CN107012422A (zh) 沉积方法、含添加物的氮化铝膜及包括该膜的压电器件
EP1959099A3 (de) Material zur wärmedämmenden Beschichtung, Wärmedämmelement und mit einer Wärmedämmung beschichtetes Element sowie Herstellungsverfahren dafür
TW200502579A (en) Foil and optical anti-counterfeiting element
WO2008091910A3 (en) Composite wafers having bulk-quality semiconductor layers
NO20070833L (no) Tynnfilmmateriale og fremstilling av dette
WO2006113539A3 (en) Semiconductor devices having gallium nitride epilayers on diamond substrates
WO2007078802A3 (en) Epitaxial deposition of doped semiconductor materials
EP3996148A3 (de) Halbleiterbauelement und halbleitervorrichtung damit
WO2007018555A8 (en) Ultratough cvd single crystal diamond and three dimensional growth thereof
TW200603268A (en) Epitaxial compound semiconductor substrate and manufacturing method therefor
TW200702299A (en) Single crystalline diamond and producing method thereof
CA2330019A1 (en) Method of isolation for acoustic resonator devices
EP0981171A3 (de) Verfahren zur Herstellung einer Blei-Zirkonate-Titanate enthaltenden Anordnung
EP2135977A3 (de) Diamantenverbundsubstrat und Verfahren zu dessen Herstellung
IL162097A (en) Differential stress reduction in thin films
ATE535628T1 (de) Hartfolien und sputtertargets zur ablagerung davon