IL133002A0 - Method and apparatus for direct writing of semiconductor die using microcolumn array - Google Patents

Method and apparatus for direct writing of semiconductor die using microcolumn array

Info

Publication number
IL133002A0
IL133002A0 IL13300299A IL13300299A IL133002A0 IL 133002 A0 IL133002 A0 IL 133002A0 IL 13300299 A IL13300299 A IL 13300299A IL 13300299 A IL13300299 A IL 13300299A IL 133002 A0 IL133002 A0 IL 133002A0
Authority
IL
Israel
Prior art keywords
semiconductor die
direct writing
microcolumn array
microcolumn
array
Prior art date
Application number
IL13300299A
Other languages
English (en)
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of IL133002A0 publication Critical patent/IL133002A0/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL13300299A 1998-03-20 1999-03-19 Method and apparatus for direct writing of semiconductor die using microcolumn array IL133002A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/045,490 US6145438A (en) 1998-03-20 1998-03-20 Method and apparatus for direct writing of semiconductor die using microcolumn array
PCT/US1999/006093 WO1999047978A1 (fr) 1998-03-20 1999-03-19 PROCEDE ET APPAREIL DE GRAVURE DIRECTE DE PUCES DE SEMICONDUCTEUR A L'AIDE D'UN GROUPEMENT DE MICROCOLONNES$i()

Publications (1)

Publication Number Publication Date
IL133002A0 true IL133002A0 (en) 2001-03-19

Family

ID=21938189

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13300299A IL133002A0 (en) 1998-03-20 1999-03-19 Method and apparatus for direct writing of semiconductor die using microcolumn array

Country Status (7)

Country Link
US (1) US6145438A (fr)
EP (1) EP0980541A1 (fr)
JP (1) JP2001527701A (fr)
KR (1) KR100581478B1 (fr)
CA (1) CA2288021A1 (fr)
IL (1) IL133002A0 (fr)
WO (1) WO1999047978A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1171901B1 (fr) 2000-02-09 2008-10-08 Fei Company Faisceau d'ions focalise multi-colonnes pour applications de nanofabrication
US6501166B2 (en) 2000-12-29 2002-12-31 Intel Corporation Stitched plane structure and process for package power delivery and dual referenced stripline I/O performance
US6724002B2 (en) 2001-01-31 2004-04-20 Applied Materials, Inc. Multiple electron beam lithography system with multiple beam modulated laser illumination
US20030048427A1 (en) 2001-01-31 2003-03-13 Applied Materials, Inc. Electron beam lithography system having improved electron gun
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
EP1249855B1 (fr) * 2001-04-09 2008-07-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Dispositif et procédé pour contrôler des faisceaux électroniques focalisés
DE60127677T2 (de) * 2001-10-05 2007-12-27 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Elektronenstrahlvorrrichtung mit Mehrfachstrahl
US6936981B2 (en) 2002-11-08 2005-08-30 Applied Materials, Inc. Retarding electron beams in multiple electron beam pattern generation
US6803582B2 (en) * 2002-11-29 2004-10-12 Oregon Health & Science University One dimensional beam blanker array
US7446601B2 (en) * 2003-06-23 2008-11-04 Astronix Research, Llc Electron beam RF amplifier and emitter
US20050224590A1 (en) * 2004-04-13 2005-10-13 John Melngailis Method and system for fabricating integrated circuit chips with unique identification numbers
US20050243120A1 (en) * 2004-04-30 2005-11-03 Heidelberger Druckmaschinen Ag Method for calibrating a write head for producing a printing plate
WO2006025706A1 (fr) * 2004-09-01 2006-03-09 Cebt Co. Ltd. Equipement de mouvement pour colonne electronique
US7598594B2 (en) * 2004-12-20 2009-10-06 Electronics And Telecommunications Research Institute Wafer-scale microcolumn array using low temperature co-fired ceramic substrate
WO2007008792A2 (fr) * 2005-07-08 2007-01-18 Nexgensemi Holdings Corporation Appareil et procede de fabrication de faisceau de particules controle
US8962151B2 (en) * 2006-08-15 2015-02-24 Integrated Micro Sensors, Inc. Method of bonding solid materials
WO2008140585A1 (fr) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Appareil et procédé de fabrication de masque conforme
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
KR20160055926A (ko) * 2013-09-20 2016-05-18 어플라이드 머티어리얼스, 인코포레이티드 나노미터 스케일 피쳐들의 직접 형성을 위한 방법 및 장치
US9589764B2 (en) * 2015-03-27 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Electron beam lithography process with multiple columns
KR102182011B1 (ko) * 2015-12-24 2020-11-24 에이에스엠엘 네델란즈 비.브이. 검사 방법 및 장치

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4243866A (en) * 1979-01-11 1981-01-06 International Business Machines Corporation Method and apparatus for forming a variable size electron beam
US4423305A (en) * 1981-07-30 1983-12-27 International Business Machines Corporation Method and apparatus for controlling alignment of an electron beam of a variable shape
US4469950A (en) * 1982-03-04 1984-09-04 Varian Associates, Inc. Charged particle beam exposure system utilizing variable line scan
US4498010A (en) * 1983-05-05 1985-02-05 The Perkin-Elmer Corporation Virtual addressing for E-beam lithography
US4568861A (en) * 1983-06-27 1986-02-04 International Business Machines Corporation Method and apparatus for controlling alignment and brightness of an electron beam
US4694178A (en) * 1985-06-28 1987-09-15 Control Data Corporation Multiple channel electron beam optical column lithography system and method of operation
US4668083A (en) * 1985-11-18 1987-05-26 The Perkin-Elmer Corporation Contact lithographic fabrication of patterns on large optics
US4818885A (en) * 1987-06-30 1989-04-04 International Business Machines Corporation Electron beam writing method and system using large range deflection in combination with a continuously moving table
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5229861A (en) * 1989-05-24 1993-07-20 Dai Nippon Insatsu Kabushiki Kaisha Electronic gravure engraving apparatus including photo tone and character/solid tone processing
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
US5103101A (en) * 1991-03-04 1992-04-07 Etec Systems, Inc. Multiphase printing for E-beam lithography
US5155412A (en) * 1991-05-28 1992-10-13 International Business Machines Corporation Method for selectively scaling a field emission electron gun and device formed thereby
US5122663A (en) * 1991-07-24 1992-06-16 International Business Machine Corporation Compact, integrated electron beam imaging system
US5393987A (en) * 1993-05-28 1995-02-28 Etec Systems, Inc. Dose modulation and pixel deflection for raster scan lithography
KR100380546B1 (ko) * 1994-02-24 2003-06-25 가부시끼가이샤 히다치 세이사꾸쇼 반도체집적회로장치의제조방법
JP3601630B2 (ja) * 1995-11-01 2004-12-15 株式会社ニコン 荷電粒子線転写方法
US5621216A (en) * 1996-04-26 1997-04-15 International Business Machines Corporation Hardware/software implementation for multipass E-beam mask writing
JP3927620B2 (ja) * 1996-06-12 2007-06-13 キヤノン株式会社 電子ビーム露光方法及びそれを用いたデバイス製造方法

Also Published As

Publication number Publication date
KR20010012701A (ko) 2001-02-26
KR100581478B1 (ko) 2006-05-23
EP0980541A1 (fr) 2000-02-23
JP2001527701A (ja) 2001-12-25
CA2288021A1 (fr) 1999-09-23
WO1999047978A1 (fr) 1999-09-23
US6145438A (en) 2000-11-14

Similar Documents

Publication Publication Date Title
IL133002A0 (en) Method and apparatus for direct writing of semiconductor die using microcolumn array
IL146628A (en) Method and apparatus for performing array microcrystallizations
AU7970398A (en) Method and apparatus for chip placement
SG64438A1 (en) Coating method and apparatus for semiconductor process
IL135535A0 (en) Methods and apparatus for manifold array processing
AU1909201A (en) Method and apparatus for personalization of semiconductor
NZ527674A (en) Apparatus and method for concurrent chemical synthesis
SG74588A1 (en) Apparatus and method for processing servlets
GB2314359B (en) Apparatus and method for facilitating well completion
EP0683625A3 (fr) Dispositif et méthode pour la fourniture de composants électroniques.
EP0691122A3 (fr) Procédé et appareil pour la fabrication de comprimés
IL126866A0 (en) Apparatus and method for fabricating flat workpieces
GB2295923B (en) Method and apparatus for manufacturing semiconductor device
AU3005597A (en) Method and apparatus for manufacturing side-terminated chips
EP0691121A3 (fr) Procédé et appareil pour la fabrication de comprimés
EP0718880A3 (fr) Appareil et méthode d'estimation de rendement de puces
SG74586A1 (en) Method and apparatus for failsafing and extending range for write
SG63826A1 (en) Substrate processing apparatus and method
PL337652A1 (en) Method of and apparatus for obtaining melamine
SG71759A1 (en) Apparatus and method for data processing
AU5383098A (en) Method and apparatus for initializing semiconductor memory
EP1052688A4 (fr) Procede et appareil de traitement de plaquettes
SG49957A1 (en) Pick-up apparatus and method for semiconductor chips
GB9818906D0 (en) Method and apparatus for reducing printer memory
GB2332637B (en) Apparatus and method for processing