IL133002A0 - Method and apparatus for direct writing of semiconductor die using microcolumn array - Google Patents

Method and apparatus for direct writing of semiconductor die using microcolumn array

Info

Publication number
IL133002A0
IL133002A0 IL13300299A IL13300299A IL133002A0 IL 133002 A0 IL133002 A0 IL 133002A0 IL 13300299 A IL13300299 A IL 13300299A IL 13300299 A IL13300299 A IL 13300299A IL 133002 A0 IL133002 A0 IL 133002A0
Authority
IL
Israel
Prior art keywords
semiconductor die
direct writing
microcolumn array
microcolumn
array
Prior art date
Application number
IL13300299A
Other languages
English (en)
Original Assignee
Etec Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Etec Systems Inc filed Critical Etec Systems Inc
Publication of IL133002A0 publication Critical patent/IL133002A0/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IL13300299A 1998-03-20 1999-03-19 Method and apparatus for direct writing of semiconductor die using microcolumn array IL133002A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/045,490 US6145438A (en) 1998-03-20 1998-03-20 Method and apparatus for direct writing of semiconductor die using microcolumn array
PCT/US1999/006093 WO1999047978A1 (en) 1998-03-20 1999-03-19 Method and apparatus for direct writing of semiconductor die using microcolumn array

Publications (1)

Publication Number Publication Date
IL133002A0 true IL133002A0 (en) 2001-03-19

Family

ID=21938189

Family Applications (1)

Application Number Title Priority Date Filing Date
IL13300299A IL133002A0 (en) 1998-03-20 1999-03-19 Method and apparatus for direct writing of semiconductor die using microcolumn array

Country Status (7)

Country Link
US (1) US6145438A (xx)
EP (1) EP0980541A1 (xx)
JP (1) JP2001527701A (xx)
KR (1) KR100581478B1 (xx)
CA (1) CA2288021A1 (xx)
IL (1) IL133002A0 (xx)
WO (1) WO1999047978A1 (xx)

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DE60136036D1 (de) 2000-02-09 2008-11-20 Fei Co Zur anwendung in der herstellung von nanostrukturen
US6501166B2 (en) 2000-12-29 2002-12-31 Intel Corporation Stitched plane structure and process for package power delivery and dual referenced stripline I/O performance
US20030048427A1 (en) 2001-01-31 2003-03-13 Applied Materials, Inc. Electron beam lithography system having improved electron gun
US6724002B2 (en) 2001-01-31 2004-04-20 Applied Materials, Inc. Multiple electron beam lithography system with multiple beam modulated laser illumination
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
EP1249855B1 (en) * 2001-04-09 2008-07-09 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Device and method for controlling focussed electron beams
EP1768162A3 (en) * 2001-10-05 2007-05-09 ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh Multiple electron beam device
US6936981B2 (en) 2002-11-08 2005-08-30 Applied Materials, Inc. Retarding electron beams in multiple electron beam pattern generation
US6803582B2 (en) * 2002-11-29 2004-10-12 Oregon Health & Science University One dimensional beam blanker array
US7446601B2 (en) * 2003-06-23 2008-11-04 Astronix Research, Llc Electron beam RF amplifier and emitter
US20050224590A1 (en) * 2004-04-13 2005-10-13 John Melngailis Method and system for fabricating integrated circuit chips with unique identification numbers
US20050243120A1 (en) * 2004-04-30 2005-11-03 Heidelberger Druckmaschinen Ag Method for calibrating a write head for producing a printing plate
EP1794771A1 (en) * 2004-09-01 2007-06-13 Cebt Co., Ltd. Motioning equipment for electron column
US7598594B2 (en) * 2004-12-20 2009-10-06 Electronics And Telecommunications Research Institute Wafer-scale microcolumn array using low temperature co-fired ceramic substrate
US7259373B2 (en) * 2005-07-08 2007-08-21 Nexgensemi Holdings Corporation Apparatus and method for controlled particle beam manufacturing
US8962151B2 (en) * 2006-08-15 2015-02-24 Integrated Micro Sensors, Inc. Method of bonding solid materials
WO2008140585A1 (en) 2006-11-22 2008-11-20 Nexgen Semi Holding, Inc. Apparatus and method for conformal mask manufacturing
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US9305747B2 (en) * 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
CN105531795B (zh) * 2013-09-20 2019-08-27 应用材料公司 用于直接形成纳米尺度的特征结构的方法及设备
US9589764B2 (en) * 2015-03-27 2017-03-07 Taiwan Semiconductor Manufacturing Company, Ltd. Electron beam lithography process with multiple columns
WO2017108444A1 (en) * 2015-12-24 2017-06-29 Asml Netherlands B.V. Method and apparatus for inspection

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US3900737A (en) * 1974-04-18 1975-08-19 Bell Telephone Labor Inc Electron beam exposure system
US4243866A (en) * 1979-01-11 1981-01-06 International Business Machines Corporation Method and apparatus for forming a variable size electron beam
US4423305A (en) * 1981-07-30 1983-12-27 International Business Machines Corporation Method and apparatus for controlling alignment of an electron beam of a variable shape
US4469950A (en) * 1982-03-04 1984-09-04 Varian Associates, Inc. Charged particle beam exposure system utilizing variable line scan
US4498010A (en) * 1983-05-05 1985-02-05 The Perkin-Elmer Corporation Virtual addressing for E-beam lithography
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US4694178A (en) * 1985-06-28 1987-09-15 Control Data Corporation Multiple channel electron beam optical column lithography system and method of operation
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Also Published As

Publication number Publication date
WO1999047978A1 (en) 1999-09-23
CA2288021A1 (en) 1999-09-23
JP2001527701A (ja) 2001-12-25
KR20010012701A (ko) 2001-02-26
US6145438A (en) 2000-11-14
KR100581478B1 (ko) 2006-05-23
EP0980541A1 (en) 2000-02-23

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