IL129151A0 - Screening oxide for source and drain regions formed from solid dopant source - Google Patents

Screening oxide for source and drain regions formed from solid dopant source

Info

Publication number
IL129151A0
IL129151A0 IL12915197A IL12915197A IL129151A0 IL 129151 A0 IL129151 A0 IL 129151A0 IL 12915197 A IL12915197 A IL 12915197A IL 12915197 A IL12915197 A IL 12915197A IL 129151 A0 IL129151 A0 IL 129151A0
Authority
IL
Israel
Prior art keywords
source
drain regions
regions formed
solid dopant
screening oxide
Prior art date
Application number
IL12915197A
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of IL129151A0 publication Critical patent/IL129151A0/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H10P32/1412—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only through the applied layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/017—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
IL12915197A 1996-09-24 1997-07-10 Screening oxide for source and drain regions formed from solid dopant source IL129151A0 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US71677296A 1996-09-24 1996-09-24
PCT/US1997/012052 WO1998013861A1 (en) 1996-09-24 1997-07-10 Screening oxide for source and drain regions formed from solid dopant source

Publications (1)

Publication Number Publication Date
IL129151A0 true IL129151A0 (en) 2000-02-17

Family

ID=24879373

Family Applications (1)

Application Number Title Priority Date Filing Date
IL12915197A IL129151A0 (en) 1996-09-24 1997-07-10 Screening oxide for source and drain regions formed from solid dopant source

Country Status (6)

Country Link
EP (1) EP0958596A1 (en)
JP (1) JP2001501037A (en)
KR (1) KR20000048595A (en)
AU (1) AU3657197A (en)
IL (1) IL129151A0 (en)
WO (1) WO1998013861A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5156945B2 (en) * 2005-01-05 2013-03-06 国立大学法人佐賀大学 Semiconductor device manufacturing method
JP7657697B2 (en) * 2021-10-26 2025-04-07 ルネサスエレクトロニクス株式会社 Semiconductor Device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01123417A (en) * 1987-11-07 1989-05-16 Mitsubishi Electric Corp Manufacture of semiconductor device
US5141895A (en) * 1991-01-11 1992-08-25 Motorola, Inc. Semiconductor device process using diffusant penetration and source layers for shallow regions
US5279976A (en) * 1991-05-03 1994-01-18 Motorola, Inc. Method for fabricating a semiconductor device having a shallow doped region

Also Published As

Publication number Publication date
KR20000048595A (en) 2000-07-25
WO1998013861A1 (en) 1998-04-02
AU3657197A (en) 1998-04-17
EP0958596A1 (en) 1999-11-24
JP2001501037A (en) 2001-01-23

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