IL103347A - Photo-reactive device and method for their creation, including vehicle evaluation and sunken contacts for capturing minority carriers - Google Patents
Photo-reactive device and method for their creation, including vehicle evaluation and sunken contacts for capturing minority carriersInfo
- Publication number
- IL103347A IL103347A IL10334792A IL10334792A IL103347A IL 103347 A IL103347 A IL 103347A IL 10334792 A IL10334792 A IL 10334792A IL 10334792 A IL10334792 A IL 10334792A IL 103347 A IL103347 A IL 103347A
- Authority
- IL
- Israel
- Prior art keywords
- layer
- photoresponsive
- contacts
- substrate
- photoresponsive layer
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims description 30
- 239000000969 carrier Substances 0.000 title claims description 14
- 238000000034 method Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 15
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 2
- 229910052753 mercury Inorganic materials 0.000 claims 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 11
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000004943 liquid phase epitaxy Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910004611 CdZnTe Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
- H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/777,874 US5241196A (en) | 1991-10-15 | 1991-10-15 | Photoresponsive device including composition grading and recessed contacts for trapping minority carriers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL103347A true IL103347A (en) | 1994-08-26 |
Family
ID=25111572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL10334792A IL103347A (en) | 1991-10-15 | 1992-10-05 | Photo-reactive device and method for their creation, including vehicle evaluation and sunken contacts for capturing minority carriers |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5241196A (ja) |
| EP (1) | EP0541973B1 (ja) |
| JP (1) | JP2642286B2 (ja) |
| DE (1) | DE69220756T2 (ja) |
| IL (1) | IL103347A (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5457331A (en) * | 1993-04-08 | 1995-10-10 | Santa Barbara Research Center | Dual-band infrared radiation detector optimized for fabrication in compositionally graded HgCdTe |
| US6043548A (en) * | 1993-04-14 | 2000-03-28 | Yeda Research And Development Co., Ltd. | Semiconductor device with stabilized junction |
| US5466953A (en) * | 1993-05-28 | 1995-11-14 | Santa Barbara Research Center | Denuded zone field effect photoconductive detector |
| US5512511A (en) * | 1994-05-24 | 1996-04-30 | Santa Barbara Research Center | Process for growing HgCdTe base and contact layer in one operation |
| JP2773730B2 (ja) * | 1996-03-07 | 1998-07-09 | 日本電気株式会社 | 光伝導型赤外線検出素子 |
| US7368762B2 (en) * | 2005-01-06 | 2008-05-06 | Teledyne Licensing, Llc | Heterojunction photodiode |
| FR3109244B1 (fr) | 2020-04-09 | 2022-04-01 | Commissariat Energie Atomique | Dispositif de photo-détection à gradient latéral de concentration en cadmium dans la zone de charge d’espace |
| WO2021205102A1 (fr) * | 2020-04-09 | 2021-10-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | PROCÉDÉ DE FABRICATION D'UN DISPOSITIF DE PHOTODÉTECTION À FAIBLE BRUIT DANS UN SUBSTRAT EN CdHgTe |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4117504A (en) * | 1976-08-06 | 1978-09-26 | Vadim Nikolaevich Maslov | Heterogeneous semiconductor structure with composition gradient and method for producing same |
| GB2095898B (en) * | 1981-03-27 | 1985-01-09 | Philips Electronic Associated | Methods of manufacturing a detector device |
| US4447470A (en) * | 1982-12-06 | 1984-05-08 | Ford Aerospace & Communications Corporation | Composition control of CSVPE HgCdTe |
| FR2557562A1 (fr) * | 1983-12-29 | 1985-07-05 | Menn Roger | Procede de fabrication de couches non conductrices a variation de composition atomique |
| JPS62130568A (ja) * | 1985-12-03 | 1987-06-12 | Fujitsu Ltd | ヘテロ接合構造 |
| WO1987003743A1 (en) * | 1985-12-05 | 1987-06-18 | Santa Barbara Research Center | Structure and method of fabricating a trapping-mode photodetector |
| US4914495A (en) * | 1985-12-05 | 1990-04-03 | Santa Barbara Research Center | Photodetector with player covered by N layer |
| JPH0719915B2 (ja) * | 1986-11-05 | 1995-03-06 | 富士通株式会社 | 赤外線検知素子 |
| JPS63164478A (ja) * | 1986-12-26 | 1988-07-07 | Fujitsu Ltd | 赤外線検知素子の製造方法 |
| JPS63240081A (ja) * | 1987-03-27 | 1988-10-05 | Nec Corp | 光導電性半導体受光素子 |
| JPH02100927A (ja) * | 1988-10-07 | 1990-04-12 | Ricoh Co Ltd | 給紙トレイ |
| JPH02244671A (ja) * | 1988-12-06 | 1990-09-28 | Fujitsu Ltd | 多素子型光検知素子及びその製造方法 |
| JPH02218173A (ja) * | 1989-02-20 | 1990-08-30 | Fujitsu Ltd | 光電導型赤外線検知素子 |
| JPH02291179A (ja) * | 1989-04-29 | 1990-11-30 | Fujitsu Ltd | 赤外線検知装置 |
| US4961098A (en) * | 1989-07-03 | 1990-10-02 | Santa Barbara Research Center | Heterojunction photodiode array |
| US4999694A (en) * | 1989-08-18 | 1991-03-12 | At&T Bell Laboratories | Photodiode |
| JPH03204923A (ja) * | 1989-12-29 | 1991-09-06 | Fujitsu Ltd | 化合物半導体結晶の製造方法 |
| US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
-
1991
- 1991-10-15 US US07/777,874 patent/US5241196A/en not_active Expired - Fee Related
-
1992
- 1992-10-05 IL IL10334792A patent/IL103347A/en not_active IP Right Cessation
- 1992-10-12 DE DE69220756T patent/DE69220756T2/de not_active Expired - Fee Related
- 1992-10-12 EP EP92117409A patent/EP0541973B1/en not_active Expired - Lifetime
- 1992-10-15 JP JP4277501A patent/JP2642286B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US5241196A (en) | 1993-08-31 |
| JPH05251726A (ja) | 1993-09-28 |
| JP2642286B2 (ja) | 1997-08-20 |
| EP0541973B1 (en) | 1997-07-09 |
| DE69220756T2 (de) | 1998-02-26 |
| DE69220756D1 (de) | 1997-08-14 |
| EP0541973A1 (en) | 1993-05-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KB | Patent renewed | ||
| HC | Change of name of proprietor(s) | ||
| RH1 | Patent not in force |