IE823098L - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- IE823098L IE823098L IE823098A IE309882A IE823098L IE 823098 L IE823098 L IE 823098L IE 823098 A IE823098 A IE 823098A IE 309882 A IE309882 A IE 309882A IE 823098 L IE823098 L IE 823098L
- Authority
- IE
- Ireland
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56213411A JPS6052520B2 (en) | 1981-12-29 | 1981-12-29 | semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
IE823098L true IE823098L (en) | 1983-06-29 |
IE54335B1 IE54335B1 (en) | 1989-08-30 |
Family
ID=16638779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IE3098/82A IE54335B1 (en) | 1981-12-29 | 1982-12-30 | Semiconductor memory device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4479200A (en) |
EP (1) | EP0084252B1 (en) |
JP (1) | JPS6052520B2 (en) |
DE (1) | DE3272052D1 (en) |
IE (1) | IE54335B1 (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6015892A (en) * | 1983-07-08 | 1985-01-26 | Nec Corp | Reference voltage generating circuit |
JPS6083291A (en) * | 1983-10-13 | 1985-05-11 | Nec Corp | Semiconductor memory |
JPS60253091A (en) * | 1984-05-30 | 1985-12-13 | Fujitsu Ltd | Semiconductor storage device |
JPS61123168A (en) * | 1984-11-20 | 1986-06-11 | Fujitsu Ltd | Semiconductor memory |
US4845679A (en) * | 1987-03-30 | 1989-07-04 | Honeywell Inc. | Diode-FET logic circuitry |
US4922455A (en) * | 1987-09-08 | 1990-05-01 | International Business Machines Corporation | Memory cell with active device for saturation capacitance discharge prior to writing |
EP0310351B1 (en) * | 1987-09-30 | 1993-07-14 | Texas Instruments Incorporated | Static memory using schottky technology |
US5673218A (en) * | 1996-03-05 | 1997-09-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US5889694A (en) * | 1996-03-05 | 1999-03-30 | Shepard; Daniel R. | Dual-addressed rectifier storage device |
US6956757B2 (en) | 2000-06-22 | 2005-10-18 | Contour Semiconductor, Inc. | Low cost high density rectifier matrix memory |
US7813157B2 (en) * | 2007-10-29 | 2010-10-12 | Contour Semiconductor, Inc. | Non-linear conductor memory |
US20090225621A1 (en) * | 2008-03-05 | 2009-09-10 | Shepard Daniel R | Split decoder storage array and methods of forming the same |
US8325556B2 (en) | 2008-10-07 | 2012-12-04 | Contour Semiconductor, Inc. | Sequencing decoder circuit |
WO2013094169A1 (en) | 2011-12-19 | 2013-06-27 | パナソニック株式会社 | Non-volatile storage device and manufacturing method thereof |
US8995170B2 (en) | 2012-03-29 | 2015-03-31 | Panasonic Intellectual Property Management Co., Ltd. | Non-volatile memory device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4057789A (en) * | 1974-06-19 | 1977-11-08 | International Business Machines Corporation | Reference voltage source for memory cells |
JPS6020837B2 (en) * | 1980-05-09 | 1985-05-23 | 日本電信電話株式会社 | Storage device |
-
1981
- 1981-12-29 JP JP56213411A patent/JPS6052520B2/en not_active Expired
-
1982
- 1982-12-23 DE DE8282306888T patent/DE3272052D1/en not_active Expired
- 1982-12-23 EP EP82306888A patent/EP0084252B1/en not_active Expired
- 1982-12-27 US US06/453,110 patent/US4479200A/en not_active Expired - Fee Related
- 1982-12-30 IE IE3098/82A patent/IE54335B1/en unknown
Also Published As
Publication number | Publication date |
---|---|
IE54335B1 (en) | 1989-08-30 |
JPS6052520B2 (en) | 1985-11-19 |
EP0084252A2 (en) | 1983-07-27 |
JPS58118087A (en) | 1983-07-13 |
EP0084252B1 (en) | 1986-07-16 |
EP0084252A3 (en) | 1983-10-05 |
DE3272052D1 (en) | 1986-08-21 |
US4479200A (en) | 1984-10-23 |
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