IDP000029660A - SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si) - Google Patents

SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si)

Info

Publication number
IDP000029660A
IDP000029660A IDP20000193A IDP00200000193A IDP000029660A ID P000029660 A IDP000029660 A ID P000029660A ID P20000193 A IDP20000193 A ID P20000193A ID P00200000193 A IDP00200000193 A ID P00200000193A ID P000029660 A IDP000029660 A ID P000029660A
Authority
ID
Indonesia
Prior art keywords
amorf
planting
vapor deposition
chemical vapor
reactor system
Prior art date
Application number
IDP20000193A
Other languages
English (en)
Inventor
Dr Sukirno
Toto Dr Winata
M Prof Barmawi
Original Assignee
Dr Sukirno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dr Sukirno filed Critical Dr Sukirno
Priority to IDP20000193A priority Critical patent/IDP000029660A/id
Publication of IDP000029660A publication Critical patent/IDP000029660A/id

Links

IDP20000193A 2000-03-15 2000-03-15 SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si) IDP000029660A (id)

Priority Applications (1)

Application Number Priority Date Filing Date Title
IDP20000193A IDP000029660A (id) 2000-03-15 2000-03-15 SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IDP20000193A IDP000029660A (id) 2000-03-15 2000-03-15 SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si)

Publications (1)

Publication Number Publication Date
IDP000029660A true IDP000029660A (id) 2001-09-20

Family

ID=30130625

Family Applications (1)

Application Number Title Priority Date Filing Date
IDP20000193A IDP000029660A (id) 2000-03-15 2000-03-15 SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si)

Country Status (1)

Country Link
ID (1) IDP000029660A (id)

Similar Documents

Publication Publication Date Title
GB2419896B (en) Chemical vapor deposition reactor
EP1440179A4 (en) CHEMICAL VAPOR DEPOSITION SYSTEM
HK1060214A1 (en) Process for catalytic chemical vapor deposition ofsilicon nitride
EP1358368A4 (en) SUSPECLOR-FREE REACTOR FOR GROWING EPITAXIAL LAYERS ON WAFER BY CVD
SG84622A1 (en) Chemical vapor deposition of barriers from novel precursors
AU2002346665A1 (en) Chemical vapor deposition vaporizer
SE9801190D0 (sv) A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
AU2003299479A8 (en) Preparation of asymmetric membranes using hot-filament chemical vapor deposition
IL146135A0 (en) Chemical vapor deposition system and method
EP1620294A4 (en) EPITAXIAL GROWTH UNDER CVD DECISION
EG23247A (en) Process and plant for the heterogeneous synthesis of chemical compounds.
IL176787A0 (en) An apparatus for the manufacture of chemical vapor deposited domes
IDP000029660A (id) SISTEM REAKTOR TUNGGAL PECVD (PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION) UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si)
EP1548150A4 (en) PLASMA PROCESSING SYSTEM AND ITS SUBSTRATE PROCESSING METHOD, PLASMA-LOWEST CVD SYSTEM AND ITS FILM DISTINCTION METHOD
TW200801227A (en) Method of depositing chalcogenide film for phase-change memory
EP1102872A4 (en) NEW ORGANO COPPER TEMPLATE FOR CVD OF COPPER FILMS
AU2002353021A1 (en) Chemical vapor deposition reactor
AU2001255358A1 (en) Methods for chemical vapor deposition of titanium-silicon-nitrogen films
IDP000029670A (id) SISTEM REAKTOR GANDA PECVD UNTUK PENUMBUHAN LAPISAN TIPIS MATERIAL SILIKON AMORF (a-Si)
AU1345901A (en) Low temperature chemical vapor deposition of thin film magnets
SG90248A1 (en) Methods for improving chemical vapor deposition processing
KR970046657U (ko) 화학 기상 증착장비의 반응가스 주입장치
DE10084986T1 (de) Einrichtung zur Behandlung einer Wasserstoff und Wasserdampf enthaltenden Gasmischung
TW560537U (en) Chemical vapor deposition reactor
DE69815710D1 (de) Substrat für plasma-gasreaktoren