HUT55845A - Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working - Google Patents

Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working

Info

Publication number
HUT55845A
HUT55845A HU629889A HU629889A HUT55845A HU T55845 A HUT55845 A HU T55845A HU 629889 A HU629889 A HU 629889A HU 629889 A HU629889 A HU 629889A HU T55845 A HUT55845 A HU T55845A
Authority
HU
Hungary
Prior art keywords
melt
monocristals
growing
solution
during working
Prior art date
Application number
HU629889A
Other languages
Hungarian (hu)
Other versions
HU896298D0 (en
Inventor
Janos Vandlik
Original Assignee
Mta Koezponti Fiz Kutato Intez
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mta Koezponti Fiz Kutato Intez filed Critical Mta Koezponti Fiz Kutato Intez
Priority to HU629889A priority Critical patent/HUT55845A/en
Publication of HU896298D0 publication Critical patent/HU896298D0/en
Publication of HUT55845A publication Critical patent/HUT55845A/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Seed is dipped into molten material, rotated and raised during crystal growth. Crucible contg. molten material is supported on a float. - Equipment used comprises a crucible which is used to hold the molten material, and is located on a support, within a furnace. Single crystal seed and crystal are held in a support connected to the draw-bar. Crucible support is attached to a float which is immersed in a liq. held in basin (22)
HU629889A 1989-11-29 1989-11-29 Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working HUT55845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
HU629889A HUT55845A (en) 1989-11-29 1989-11-29 Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
HU629889A HUT55845A (en) 1989-11-29 1989-11-29 Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working

Publications (2)

Publication Number Publication Date
HU896298D0 HU896298D0 (en) 1990-02-28
HUT55845A true HUT55845A (en) 1991-06-28

Family

ID=10971437

Family Applications (1)

Application Number Title Priority Date Filing Date
HU629889A HUT55845A (en) 1989-11-29 1989-11-29 Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working

Country Status (1)

Country Link
HU (1) HUT55845A (en)

Also Published As

Publication number Publication date
HU896298D0 (en) 1990-02-28

Similar Documents

Publication Publication Date Title
EP0389533A4 (en) Sublimation growth of silicon carbide single crystals
MY103936A (en) Manufacturing method and equipment of single silicon crystal
ATE125311T1 (en) METHOD FOR CONTINUOUSLY FEEDING A MELT.
KR890002389A (en) Culture method and culture device
FI99025B (en) Procedure for growing enzyme crystals
ZA913972B (en) Wet-tip die for efg crystal growth apparatus
HUT55845A (en) Process and apparatus for stabilizing level of melt or melt -solution in apparatus for growing monocristals during working
DE3164917D1 (en) A crystallization apparatus and method for the formation of crystals in a such apparatus
EP0321576A4 (en) Method for growing single crystal from molten liquid.
JPS5547300A (en) Crystal pulling device
SU882247A1 (en) METHOD OF GROWING MONOCRYSTALLINE SiC
EP0284434A3 (en) Method of forming crystals
DE68913790D1 (en) Process and crucible for the solidification of materials and use for semiconductor crystal growth.
HUT55844A (en) Process and apparatus for growing cristals from supercooled melt or melt-solution of unrestricted time
DE3474755D1 (en) Plant tissue culture vessel
JPS645992A (en) Method for growing crystal
JPS5551795A (en) Artificial rock crystal and growing method therefor
JPS5645890A (en) Crystal growing apparatus
Valov et al. Growth of ZnGeP sub (2) single crystals from solution in a thallium melt.
HUT55843A (en) Process and apparatus for quick selfcontrolled cristal growing advantageously from melts or melt-solutions
JPS5776822A (en) Method of liquid phase epitaxial growth
Ma et al. Influence of crystal orientation on solidification front during directional solidification
JPS6469592A (en) Liquid epitaxial apparatus
JPS5654299A (en) Growing method of lead molybdate single crystal
JPS5717496A (en) Liquid phase growing method for single crystal of compound semiconductor

Legal Events

Date Code Title Description
DFD9 Temporary prot. cancelled due to non-payment of fee