HK14295A - Fabricating a semiconductor device with buried oxide - Google Patents
Fabricating a semiconductor device with buried oxideInfo
- Publication number
- HK14295A HK14295A HK14295A HK14295A HK14295A HK 14295 A HK14295 A HK 14295A HK 14295 A HK14295 A HK 14295A HK 14295 A HK14295 A HK 14295A HK 14295 A HK14295 A HK 14295A
- Authority
- HK
- Hong Kong
- Prior art keywords
- fabricating
- semiconductor device
- buried oxide
- buried
- oxide
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76243—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/766,995 US4717677A (en) | 1985-08-19 | 1985-08-19 | Fabricating a semiconductor device with buried oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK14295A true HK14295A (en) | 1995-02-10 |
Family
ID=25078158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK14295A HK14295A (en) | 1985-08-19 | 1995-02-06 | Fabricating a semiconductor device with buried oxide |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4717677A (de) |
| EP (1) | EP0233202B1 (de) |
| JP (1) | JPS63500627A (de) |
| DE (1) | DE3686253T2 (de) |
| HK (1) | HK14295A (de) |
| SG (1) | SG139694G (de) |
| WO (1) | WO1987001238A1 (de) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4810664A (en) * | 1986-08-14 | 1989-03-07 | Hewlett-Packard Company | Method for making patterned implanted buried oxide transistors and structures |
| US4959329A (en) * | 1988-03-28 | 1990-09-25 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US4887143A (en) * | 1988-03-28 | 1989-12-12 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US4988632A (en) * | 1990-01-02 | 1991-01-29 | Motorola, Inc. | Bipolar process using selective silicon deposition |
| JP2746499B2 (ja) * | 1992-05-15 | 1998-05-06 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| US5731218A (en) * | 1993-11-02 | 1998-03-24 | Siemens Aktiengesellschaft | Method for producing a contact hole to a doped region |
| US5543637A (en) * | 1994-11-14 | 1996-08-06 | North Carolina State University | Silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein |
| JPH08316223A (ja) * | 1995-05-16 | 1996-11-29 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US5869380A (en) * | 1998-07-06 | 1999-02-09 | Industrial Technology Research Institute | Method for forming a bipolar junction transistor |
| US6281521B1 (en) | 1998-07-09 | 2001-08-28 | Cree Research Inc. | Silicon carbide horizontal channel buffered gate semiconductor devices |
| US6596570B2 (en) * | 2001-06-06 | 2003-07-22 | International Business Machines Corporation | SOI device with reduced junction capacitance |
| US7550330B2 (en) * | 2006-11-29 | 2009-06-23 | International Business Machines Corporation | Deep junction SOI MOSFET with enhanced edge body contacts |
| US8053327B2 (en) * | 2006-12-21 | 2011-11-08 | Globalfoundries Singapore Pte. Ltd. | Method of manufacture of an integrated circuit system with self-aligned isolation structures |
| US9324828B2 (en) | 2014-08-12 | 2016-04-26 | International Business Machines Corporation | Vertical P-type, N-type, P-type (PNP) junction integrated circuit (IC) structure, and methods of forming |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3622382A (en) * | 1969-05-05 | 1971-11-23 | Ibm | Semiconductor isolation structure and method of producing |
| US3897274A (en) * | 1971-06-01 | 1975-07-29 | Texas Instruments Inc | Method of fabricating dielectrically isolated semiconductor structures |
| US4396933A (en) * | 1971-06-18 | 1983-08-02 | International Business Machines Corporation | Dielectrically isolated semiconductor devices |
| DE2507366C3 (de) * | 1975-02-20 | 1980-06-26 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Unterdrückung parasitärer Schaltungselemente |
| JPS51135385A (en) * | 1975-03-06 | 1976-11-24 | Texas Instruments Inc | Method of producing semiconductor device |
| US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
| JPS5721856B2 (en) * | 1977-11-28 | 1982-05-10 | Nippon Telegraph & Telephone | Semiconductor and its manufacture |
| DE2822911C2 (de) * | 1978-05-26 | 1984-03-01 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halbleiteranordnung mit mindestens einem pn-Übergang und Verfahren zu ihrer Herstellung |
| JPS5526660A (en) * | 1978-08-16 | 1980-02-26 | Toshiba Corp | Semiconductor device and method of manufacturing of the same |
| JPS5577172A (en) * | 1978-12-06 | 1980-06-10 | Oki Electric Ind Co Ltd | Semiconductor device |
| JPS55105366A (en) * | 1979-02-06 | 1980-08-12 | Fujitsu Ltd | Semiconductor device |
| DE2946963A1 (de) * | 1979-11-21 | 1981-06-04 | Siemens AG, 1000 Berlin und 8000 München | Schnelle bipolare transistoren |
| GB2085224B (en) * | 1980-10-07 | 1984-08-15 | Itt Ind Ltd | Isolating sc device using oxygen duping |
| US4601095A (en) * | 1981-10-27 | 1986-07-22 | Sumitomo Electric Industries, Ltd. | Process for fabricating a Schottky-barrier gate field effect transistor |
| US4412868A (en) * | 1981-12-23 | 1983-11-01 | General Electric Company | Method of making integrated circuits utilizing ion implantation and selective epitaxial growth |
| JPS58111345A (ja) * | 1981-12-25 | 1983-07-02 | Hitachi Ltd | 半導体装置 |
| US4532003A (en) * | 1982-08-09 | 1985-07-30 | Harris Corporation | Method of fabrication bipolar transistor with improved base collector breakdown voltage and collector series resistance |
| US4546536A (en) * | 1983-08-04 | 1985-10-15 | International Business Machines Corporation | Fabrication methods for high performance lateral bipolar transistors |
| US4507158A (en) * | 1983-08-12 | 1985-03-26 | Hewlett-Packard Co. | Trench isolated transistors in semiconductor films |
| US4706378A (en) * | 1985-01-30 | 1987-11-17 | Texas Instruments Incorporated | Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation |
-
1985
- 1985-08-19 US US06/766,995 patent/US4717677A/en not_active Expired - Lifetime
-
1986
- 1986-06-13 DE DE8686904005T patent/DE3686253T2/de not_active Expired - Lifetime
- 1986-06-13 WO PCT/US1986/001273 patent/WO1987001238A1/en active IP Right Grant
- 1986-06-13 EP EP86904005A patent/EP0233202B1/de not_active Expired - Lifetime
- 1986-06-13 JP JP61503227A patent/JPS63500627A/ja active Pending
-
1994
- 1994-09-30 SG SG139694A patent/SG139694G/en unknown
-
1995
- 1995-02-06 HK HK14295A patent/HK14295A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO1987001238A1 (en) | 1987-02-26 |
| EP0233202A4 (de) | 1990-06-26 |
| DE3686253D1 (de) | 1992-09-03 |
| DE3686253T2 (de) | 1992-12-17 |
| SG139694G (en) | 1995-01-13 |
| US4717677A (en) | 1988-01-05 |
| JPS63500627A (ja) | 1988-03-03 |
| EP0233202B1 (de) | 1992-07-29 |
| EP0233202A1 (de) | 1987-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |