HK1256204A1 - Bipolar transistor on high-resistivity substrate - Google Patents

Bipolar transistor on high-resistivity substrate

Info

Publication number
HK1256204A1
HK1256204A1 HK18115304.9A HK18115304A HK1256204A1 HK 1256204 A1 HK1256204 A1 HK 1256204A1 HK 18115304 A HK18115304 A HK 18115304A HK 1256204 A1 HK1256204 A1 HK 1256204A1
Authority
HK
Hong Kong
Prior art keywords
bipolar transistor
resistivity substrate
resistivity
substrate
bipolar
Prior art date
Application number
HK18115304.9A
Other languages
Chinese (zh)
Inventor
M‧J‧麥克帕特林
M‧M‧多爾蒂
Original Assignee
天工方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/536,743 external-priority patent/US20140001602A1/en
Priority claimed from US13/536,662 external-priority patent/US20140001608A1/en
Priority claimed from US13/536,749 external-priority patent/US9048284B2/en
Priority claimed from US13/536,609 external-priority patent/US20140001567A1/en
Priority claimed from US13/536,630 external-priority patent/US9761700B2/en
Application filed by 天工方案公司 filed Critical 天工方案公司
Publication of HK1256204A1 publication Critical patent/HK1256204A1/en

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    • H01L2924/30111—Impedance matching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
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US13/536,743 US20140001602A1 (en) 2012-06-28 2012-06-28 Device manufacturing using high-resistivity bulk silicon wafer
US13/536,662 US20140001608A1 (en) 2012-06-28 2012-06-28 Semiconductor substrate having high and low-resistivity portions
US13/536,749 US9048284B2 (en) 2012-06-28 2012-06-28 Integrated RF front end system
US13/536,609 US20140001567A1 (en) 2012-06-28 2012-06-28 Fet transistor on high-resistivity substrate
US13/536,630 US9761700B2 (en) 2012-06-28 2012-06-28 Bipolar transistor on high-resistivity substrate

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TWI611586B (en) 2018-01-11

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