HK124396A - Buried heterostructure lasers using mocvd growth over patterned substrates - Google Patents

Buried heterostructure lasers using mocvd growth over patterned substrates

Info

Publication number
HK124396A
HK124396A HK124396A HK124396A HK124396A HK 124396 A HK124396 A HK 124396A HK 124396 A HK124396 A HK 124396A HK 124396 A HK124396 A HK 124396A HK 124396 A HK124396 A HK 124396A
Authority
HK
Hong Kong
Prior art keywords
growth over
patterned substrates
buried heterostructure
mocvd growth
over patterned
Prior art date
Application number
HK124396A
Other languages
English (en)
Inventor
Paul Raymond Berger
Niloy Kumar Dutta
William Scott Hobson
John Lopata
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of HK124396A publication Critical patent/HK124396A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207—GaAsP based

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
HK124396A 1992-01-24 1996-07-11 Buried heterostructure lasers using mocvd growth over patterned substrates HK124396A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/825,208 US5208821A (en) 1992-01-24 1992-01-24 Buried heterostructure lasers using MOCVD growth over patterned substrates

Publications (1)

Publication Number Publication Date
HK124396A true HK124396A (en) 1996-07-19

Family

ID=25243382

Family Applications (1)

Application Number Title Priority Date Filing Date
HK124396A HK124396A (en) 1992-01-24 1996-07-11 Buried heterostructure lasers using mocvd growth over patterned substrates

Country Status (7)

Country Link
US (1) US5208821A (ko)
EP (1) EP0552888B1 (ko)
JP (1) JP2545188B2 (ko)
KR (1) KR100187778B1 (ko)
CA (1) CA2084820C (ko)
DE (1) DE69300772T2 (ko)
HK (1) HK124396A (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3024354B2 (ja) * 1992-01-27 2000-03-21 日本電気株式会社 半導体レーザ
JP2798545B2 (ja) * 1992-03-03 1998-09-17 シャープ株式会社 半導体発光素子及びその製造方法
US5559053A (en) * 1994-04-14 1996-09-24 Lucent Technologies Inc. Vertical cavity semiconductor laser
US5674779A (en) * 1995-08-16 1997-10-07 Philips Electronics North America Corporation Method for fabricating a ridge-shaped laser in a channel
US5742631A (en) * 1996-07-26 1998-04-21 Xerox Corporation Independently-addressable monolithic laser arrays
US5880482A (en) * 1997-01-29 1999-03-09 The Board Of Trustees Of The University Of Illinios Low dark current photodetector
US6445723B1 (en) 1998-05-18 2002-09-03 Jds Uniphase Corporation Laser source with submicron aperture
JPH11354886A (ja) * 1998-06-10 1999-12-24 Nec Corp 半導体レーザおよびその製造方法
WO2001018919A1 (en) * 1999-09-03 2001-03-15 The Regents Of The University Of California Tunable laser source with integrated optical modulator
KR100359739B1 (ko) * 2000-12-28 2002-11-09 한국과학기술연구원 이종 단결정박막의 접합 및 덧성장방법
KR100427581B1 (ko) * 2002-02-21 2004-04-28 한국전자통신연구원 반도체 광소자의 제조방법
JP2006278661A (ja) * 2005-03-29 2006-10-12 Opnext Japan Inc 光半導体素子及びその製造方法並びに光半導体装置
US7763485B1 (en) 2006-05-15 2010-07-27 Finisar Corporation Laser facet pre-coating etch for controlling leakage current
US8034648B1 (en) * 2006-05-15 2011-10-11 Finisar Corporation Epitaxial regrowth in a distributed feedback laser
US7567601B1 (en) 2006-05-15 2009-07-28 Finisar Corporation Semiconductor laser having low stress passivation layer
US7573925B1 (en) 2006-05-15 2009-08-11 Finisar Corporation Semiconductor laser having a doped active layer
US7606279B1 (en) 2006-05-15 2009-10-20 Finisar Corporation Thin INP spacer layer in a high speed laser for reduced lateral current spreading
US8277877B1 (en) 2006-05-15 2012-10-02 Finisar Corporation Method for applying protective laser facet coatings
JP5378651B2 (ja) * 2007-01-31 2013-12-25 日本オクラロ株式会社 半導体レーザ素子及びその製造方法
US8507304B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE)
US8148241B2 (en) * 2009-07-31 2012-04-03 Applied Materials, Inc. Indium surfactant assisted HVPE of high quality gallium nitride and gallium nitride alloy films
US20110027973A1 (en) * 2009-07-31 2011-02-03 Applied Materials, Inc. Method of forming led structures
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
JP5772005B2 (ja) 2011-01-21 2015-09-02 東洋紡株式会社 エアバッグ用基布

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4426701A (en) * 1981-12-23 1984-01-17 Rca Corporation Constricted double heterostructure semiconductor laser
US4839900A (en) * 1985-08-21 1989-06-13 Sharp Kabushiki Kaisha Buried type semiconductor laser device
US4749255A (en) * 1985-12-09 1988-06-07 American Telephone And Telegraph Company, At&T Bell Laboratories Coating for optical devices
US4902644A (en) * 1986-03-28 1990-02-20 American Telephone And Telegraph Company At&T Bell Laboratories Preservation of surface features on semiconductor surfaces
JPH0646669B2 (ja) * 1987-07-28 1994-06-15 日本電気株式会社 半導体レ−ザ及びその製造方法
JPH01114092A (ja) * 1987-10-28 1989-05-02 Hitachi Ltd 埋込み型半導体レーザ
JPH01293687A (ja) * 1988-05-23 1989-11-27 Fuji Electric Co Ltd 半導体レーザ装置の製造方法
JPH0312981A (ja) * 1989-06-12 1991-01-21 Matsushita Electric Ind Co Ltd 半導体レーザ装置の製造方法

Also Published As

Publication number Publication date
CA2084820C (en) 1997-12-09
CA2084820A1 (en) 1993-07-25
KR930017220A (ko) 1993-08-30
EP0552888B1 (en) 1995-11-15
US5208821A (en) 1993-05-04
KR100187778B1 (ko) 1999-06-01
JP2545188B2 (ja) 1996-10-16
EP0552888A1 (en) 1993-07-28
JPH0685405A (ja) 1994-03-25
DE69300772D1 (de) 1995-12-21
DE69300772T2 (de) 1996-06-05

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)