HK1179049A1 - 雙面圖像傳感器 - Google Patents
雙面圖像傳感器Info
- Publication number
- HK1179049A1 HK1179049A1 HK13106047.5A HK13106047A HK1179049A1 HK 1179049 A1 HK1179049 A1 HK 1179049A1 HK 13106047 A HK13106047 A HK 13106047A HK 1179049 A1 HK1179049 A1 HK 1179049A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- dual
- image sensor
- sided image
- sided
- sensor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2010/035990 WO2011149451A1 (en) | 2010-05-24 | 2010-05-24 | Dual-sided image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1179049A1 true HK1179049A1 (zh) | 2013-09-19 |
Family
ID=42697579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK13106047.5A HK1179049A1 (zh) | 2010-05-24 | 2013-05-22 | 雙面圖像傳感器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8947572B2 (zh) |
| CN (1) | CN102804379B (zh) |
| HK (1) | HK1179049A1 (zh) |
| TW (1) | TWI420660B (zh) |
| WO (1) | WO2011149451A1 (zh) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2788714C (en) * | 2010-06-01 | 2016-04-19 | Boly Media Communications (Shenzhen) Co., Ltd. | Multi-spectrum photosensitive device and manufacturing method thereof |
| JP5834386B2 (ja) * | 2010-08-20 | 2015-12-24 | ソニー株式会社 | 光学センサ、レンズモジュール、およびカメラモジュール |
| US8742309B2 (en) | 2011-01-28 | 2014-06-03 | Aptina Imaging Corporation | Imagers with depth sensing capabilities |
| JP5214754B2 (ja) * | 2011-02-25 | 2013-06-19 | 株式会社東芝 | 固体撮像装置および携帯情報端末 |
| US10015471B2 (en) | 2011-08-12 | 2018-07-03 | Semiconductor Components Industries, Llc | Asymmetric angular response pixels for single sensor stereo |
| US9554115B2 (en) * | 2012-02-27 | 2017-01-24 | Semiconductor Components Industries, Llc | Imaging pixels with depth sensing capabilities |
| US8969997B2 (en) * | 2012-11-14 | 2015-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Isolation structures and methods of forming the same |
| US9332167B1 (en) | 2012-11-20 | 2016-05-03 | Amazon Technologies, Inc. | Multi-directional camera module for an electronic device |
| US9202963B2 (en) * | 2012-11-21 | 2015-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-side illumination image sensor chips and methods for forming the same |
| KR101428229B1 (ko) * | 2012-11-29 | 2014-08-07 | 현대자동차주식회사 | 차영상 취득 장치 및 방법 |
| JP6303803B2 (ja) * | 2013-07-03 | 2018-04-04 | ソニー株式会社 | 固体撮像装置およびその製造方法 |
| EP2908341B1 (en) * | 2014-02-18 | 2018-07-11 | ams AG | Semiconductor device with surface integrated focusing element |
| US9113096B1 (en) | 2014-06-30 | 2015-08-18 | Amazon Technologies, Inc. | Single sensor two-sided camera |
| US9232151B1 (en) | 2014-06-30 | 2016-01-05 | Amazon Technologies, Inc. | Single sensor two-sided camera |
| CN104157662B (zh) * | 2014-08-18 | 2017-06-30 | 北京思比科微电子技术股份有限公司 | 一种高灵敏度图像传感器像素结构及制作方法 |
| CN105700104A (zh) * | 2014-11-28 | 2016-06-22 | 鸿富锦精密工业（深圳）有限公司 | 相机模组 |
| BR112017015375A2 (pt) * | 2015-01-20 | 2018-01-16 | Eyelock Llc | sistema de lentes para aquisição de imagem visível e aquisição de imagem de íris infravermelha de alta qualidade |
| US9674465B2 (en) * | 2015-06-03 | 2017-06-06 | Omnivision Technologies, Inc. | Non-visible illumination scheme |
| KR20170036415A (ko) | 2015-09-24 | 2017-04-03 | 삼성전자주식회사 | 양면 이미지 센서 |
| CN105609513A (zh) * | 2015-10-29 | 2016-05-25 | 上海集成电路研发中心有限公司 | 双面cmos图像传感器芯片及其制造方法 |
| US10103187B2 (en) * | 2015-12-17 | 2018-10-16 | Omnivision Technologies, Inc. | Image sensor color correction |
| US9786705B2 (en) | 2015-12-21 | 2017-10-10 | Qualcomm Incorporated | Solid state image sensor with extended spectral response |
| US9923011B2 (en) * | 2016-01-12 | 2018-03-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with stacked semiconductor dies |
| CN106430075B (zh) * | 2016-11-23 | 2017-11-07 | 山东鸿荣电子有限公司 | 一种传感器的制造方法 |
| EP3410486B1 (en) * | 2017-06-02 | 2022-08-24 | ams AG | Resonant cavity enhanced image sensor |
| EP3454570A1 (en) * | 2017-09-07 | 2019-03-13 | Harpex Ltd | Signal acquisition device for acquiring three-dimensional (3d) wave field signals |
| EP3674973A1 (en) | 2018-12-28 | 2020-07-01 | Samsung Electronics Co., Ltd. | Method and apparatus with liveness detection and object recognition |
| CN110602402A (zh) * | 2019-09-19 | 2019-12-20 | 中国科学院长春光学精密机械与物理研究所 | 单传感器双像面航空相机图像检焦装置及方法 |
| TWI707465B (zh) * | 2019-10-09 | 2020-10-11 | 晶相光電股份有限公司 | 影像感測裝置及其形成方法 |
| CN114040082A (zh) * | 2021-11-30 | 2022-02-11 | 维沃移动通信有限公司 | 摄像模组、摄像控制方法及电子设备 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134274A (en) | 1991-03-18 | 1992-07-28 | Hughes Aircraft Company | Two-sided solid-state imaging device |
| US6150708A (en) * | 1998-11-13 | 2000-11-21 | Advanced Micro Devices, Inc. | Advanced CMOS circuitry that utilizes both sides of a wafer surface for increased circuit density |
| US20020030768A1 (en) | 1999-03-15 | 2002-03-14 | I-Wei Wu | Integrated high resolution image sensor and display on an active matrix array with micro-lens |
| EP1367650A1 (fr) * | 2002-05-27 | 2003-12-03 | STMicroelectronics S.A. | Dispositif éelectronique comprenant des circuits électriques et une zone photosensible, et procédé de fabrication d'un tel dispositif |
| US7838983B2 (en) * | 2005-04-26 | 2010-11-23 | Kyushu Institute Of Technology | Packaged semiconductor device and method of manufacturing the packaged semiconductor device |
| CN100440523C (zh) | 2005-07-12 | 2008-12-03 | 北京思比科微电子技术有限公司 | 高填充系数的有源像素图像传感器结构及制造方法 |
| US7539412B2 (en) * | 2006-05-17 | 2009-05-26 | Terrasem Co. Ltd. | Camera module with first and second image sensor chips, holders and lens |
| US7888159B2 (en) * | 2006-10-26 | 2011-02-15 | Omnivision Technologies, Inc. | Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating |
| US20090200631A1 (en) | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with light attenuating layer |
| US7888763B2 (en) * | 2008-02-08 | 2011-02-15 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with improved infrared sensitivity |
-
2010
- 2010-05-24 WO PCT/US2010/035990 patent/WO2011149451A1/en active Application Filing
- 2010-05-24 CN CN201080065219.XA patent/CN102804379B/zh active Active
- 2010-05-24 US US13/254,421 patent/US8947572B2/en active Active
- 2010-06-28 TW TW099121108A patent/TWI420660B/zh active
-
2013
- 2013-05-22 HK HK13106047.5A patent/HK1179049A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN102804379A (zh) | 2012-11-28 |
| WO2011149451A1 (en) | 2011-12-01 |
| CN102804379B (zh) | 2015-12-09 |
| US8947572B2 (en) | 2015-02-03 |
| US20130063641A1 (en) | 2013-03-14 |
| TWI420660B (zh) | 2013-12-21 |
| TW201143042A (en) | 2011-12-01 |
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