HK1178947A1 - 單晶金剛石材料 - Google Patents

單晶金剛石材料

Info

Publication number
HK1178947A1
HK1178947A1 HK13105780.8A HK13105780A HK1178947A1 HK 1178947 A1 HK1178947 A1 HK 1178947A1 HK 13105780 A HK13105780 A HK 13105780A HK 1178947 A1 HK1178947 A1 HK 1178947A1
Authority
HK
Hong Kong
Prior art keywords
single crystal
crystal diamond
diamond material
diamond
crystal
Prior art date
Application number
HK13105780.8A
Other languages
English (en)
Inventor
．特威切恩
．迪隆
．斯卡斯布魯克
Original Assignee
六號元素有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 六號元素有限公司 filed Critical 六號元素有限公司
Publication of HK1178947A1 publication Critical patent/HK1178947A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
HK13105780.8A 2009-12-21 2013-05-15 單晶金剛石材料 HK1178947A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0922230.8A GB2476306B (en) 2009-12-21 2009-12-21 Single crystal diamond material
PCT/EP2010/069825 WO2011076642A1 (en) 2009-12-21 2010-12-15 Single crystal diamond material

Publications (1)

Publication Number Publication Date
HK1178947A1 true HK1178947A1 (zh) 2013-09-19

Family

ID=41717247

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13105780.8A HK1178947A1 (zh) 2009-12-21 2013-05-15 單晶金剛石材料

Country Status (12)

Country Link
EP (1) EP2516700B1 (zh)
JP (2) JP5916133B2 (zh)
KR (1) KR101455482B1 (zh)
CN (1) CN102959138B (zh)
CA (1) CA2782183C (zh)
GB (1) GB2476306B (zh)
HK (1) HK1178947A1 (zh)
IL (1) IL220258A0 (zh)
MY (1) MY159243A (zh)
RU (1) RU2519104C2 (zh)
SG (1) SG181830A1 (zh)
WO (1) WO2011076642A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201112113D0 (en) * 2011-07-14 2011-08-31 Element Six Ltd Single crystal diamond substrates for synthesis of single crystal diamond material
EP2985368B1 (en) * 2013-04-09 2023-08-30 Sumitomo Electric Industries, Ltd. Single crystal diamond and diamond tool
CN104724664A (zh) * 2015-03-14 2015-06-24 王宏兴 单晶金刚石纳米柱阵列结构的制备方法和应用
JP6217949B2 (ja) * 2016-11-10 2017-10-25 住友電気工業株式会社 単結晶ダイヤモンド
GB201701173D0 (en) * 2017-01-24 2017-03-08 Element Six Tech Ltd Synthetic diamond plates
CN107675249B (zh) * 2017-09-08 2020-07-07 西安电子科技大学 单晶金刚石的扩径生长方法
CN110823098B (zh) * 2019-12-17 2024-09-27 上海昌润极锐超硬材料有限公司 一种单晶金刚石生长过程的监测方法及监测设备
CN111690981B (zh) * 2020-07-23 2021-08-03 太原理工大学 一种扩大单晶金刚石籽晶尺寸及数量的方法
CN114836829B (zh) * 2022-04-27 2024-07-05 河南天璇半导体科技有限责任公司 一种mpcvd法生产单晶金刚石的方法
CN117448951A (zh) * 2023-10-31 2024-01-26 深圳左文科技有限责任公司 基于边缘晶向处理减少金刚石晶体生长相互干涉的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04139091A (ja) * 1990-09-28 1992-05-13 Toshiba Corp ダイヤモンドの製造方法
JPH0687691A (ja) * 1992-09-04 1994-03-29 Sumitomo Electric Ind Ltd ダイヤモンドの製造方法およびダイヤモンドの製造方法に使用するダイヤモンド単結晶基材
JPH06107494A (ja) * 1992-09-24 1994-04-19 Sumitomo Electric Ind Ltd ダイヤモンドの気相成長法
JPH06172089A (ja) * 1992-12-08 1994-06-21 Sumitomo Electric Ind Ltd ダイヤモンドの合成法
JP4032482B2 (ja) * 1997-04-18 2008-01-16 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
JP2004284882A (ja) * 2003-03-20 2004-10-14 Kobe Steel Ltd ダイヤモンド及びその製造方法
JP4206789B2 (ja) * 2003-03-20 2009-01-14 トヨタ紡織株式会社 車両用シート
JP4385764B2 (ja) 2003-12-26 2009-12-16 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法
JP5163920B2 (ja) * 2005-03-28 2013-03-13 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法及びダイヤモンド単結晶基板
JP5003442B2 (ja) * 2007-12-04 2012-08-15 住友電気工業株式会社 ダイヤモンド単結晶基板の製造方法

Also Published As

Publication number Publication date
JP2015096469A (ja) 2015-05-21
EP2516700B1 (en) 2015-04-15
KR20120120244A (ko) 2012-11-01
RU2012131173A (ru) 2014-01-27
GB0922230D0 (en) 2010-02-03
GB2476306A (en) 2011-06-22
RU2519104C2 (ru) 2014-06-10
MY159243A (en) 2016-12-30
EP2516700A1 (en) 2012-10-31
KR101455482B1 (ko) 2014-10-27
JP5916133B2 (ja) 2016-05-11
CN102959138A (zh) 2013-03-06
CN102959138B (zh) 2015-05-06
CA2782183A1 (en) 2011-06-30
SG181830A1 (en) 2012-07-30
IL220258A0 (en) 2012-07-31
WO2011076642A1 (en) 2011-06-30
GB2476306B (en) 2012-07-11
JP2013514958A (ja) 2013-05-02
CA2782183C (en) 2015-05-19

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