HK1176461A1 - Continuous tunable lc resonator using a fet as a varactor - Google Patents

Continuous tunable lc resonator using a fet as a varactor

Info

Publication number
HK1176461A1
HK1176461A1 HK13103770.5A HK13103770A HK1176461A1 HK 1176461 A1 HK1176461 A1 HK 1176461A1 HK 13103770 A HK13103770 A HK 13103770A HK 1176461 A1 HK1176461 A1 HK 1176461A1
Authority
HK
Hong Kong
Prior art keywords
varactor
fet
resonator
continuous tunable
tunable
Prior art date
Application number
HK13103770.5A
Other languages
Chinese (zh)
Inventor
Bin Li
Peter J Zampardi
Andre G Metzger
Original Assignee
天工方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天工方案公司 filed Critical 天工方案公司
Publication of HK1176461A1 publication Critical patent/HK1176461A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G16—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16Z—INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS, NOT OTHERWISE PROVIDED FOR
    • G16Z99/00—Subject matter not provided for in other main groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
HK13103770.5A 2009-10-02 2013-03-26 Continuous tunable lc resonator using a fet as a varactor HK1176461A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2009/059305 WO2011040927A1 (en) 2009-10-02 2009-10-02 Continuous tunable lc resonator using a fet as a varactor

Publications (1)

Publication Number Publication Date
HK1176461A1 true HK1176461A1 (en) 2013-07-26

Family

ID=43826560

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13103770.5A HK1176461A1 (en) 2009-10-02 2013-03-26 Continuous tunable lc resonator using a fet as a varactor

Country Status (4)

Country Link
KR (1) KR101598655B1 (en)
CN (1) CN102742016B (en)
HK (1) HK1176461A1 (en)
WO (1) WO2011040927A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9059332B2 (en) 2009-10-02 2015-06-16 Skyworks Solutions, Inc. Continuous tunable LC resonator using a FET as a varactor
EP2886524A1 (en) * 2013-12-18 2015-06-24 Skyworks Solutions, Inc. Tunable resonators using high dielectric constant ferrite rods
US20190109243A1 (en) * 2017-10-06 2019-04-11 Globalfoundries Inc. Back-gate controlled varactor
US10615294B2 (en) 2018-06-13 2020-04-07 Qualcomm Incorporated Variable capacitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5250826A (en) * 1992-09-23 1993-10-05 Rockwell International Corporation Planar HBT-FET Device
US6764891B2 (en) * 2002-02-26 2004-07-20 Intel Corporation Physically defined varactor in a CMOS process
JP4046634B2 (en) * 2003-04-08 2008-02-13 Ｎｅｃエレクトロニクス株式会社 Voltage-controlled capacitance element and semiconductor integrated circuit
JP2004311858A (en) * 2003-04-10 2004-11-04 Nec Electronics Corp Semiconductor integrated circuit device
JP2005175003A (en) * 2003-12-08 2005-06-30 Matsushita Electric Ind Co Ltd Decoupling capacitor and semiconductor integrated circuit
US7132901B2 (en) * 2004-10-22 2006-11-07 Skyworks Solutions, Inc. Voltage controlled oscillator with varactor-less tuning
WO2008097604A2 (en) * 2007-02-07 2008-08-14 Microlink Devices, Inc. Hbt and field effect transistor integration
JP5175482B2 (en) * 2007-03-29 2013-04-03 ルネサスエレクトロニクス株式会社 Semiconductor device
US9654108B2 (en) * 2008-01-11 2017-05-16 Intel Mobile Communications GmbH Apparatus and method having reduced flicker noise
JP2009239202A (en) * 2008-03-28 2009-10-15 Sanyo Electric Co Ltd Amplifying element and manufacturing method thereof

Also Published As

Publication number Publication date
WO2011040927A1 (en) 2011-04-07
KR101598655B1 (en) 2016-02-29
CN102742016B (en) 2016-03-02
KR20120082012A (en) 2012-07-20
CN102742016A (en) 2012-10-17

Similar Documents

Publication Publication Date Title
HK1140552A1 (en) Coupled resonator for timepiece
EP2606573A4 (en) Tuning methods for tunable matching networks
EP2484008A4 (en) A micromechanical resonator
HK1199311A1 (en) Resonator having a tuning fork for a mechanical clock movement
PL2297973T3 (en) Tunable antenna arrangement
EP2245738A4 (en) A micromechanical resonator
SG175110A1 (en) Improved quality factor (q-factor) for a waveguide micro-ring resonator
GB0706585D0 (en) Tunable laser
EP2448060A4 (en) Tunable band-pass filter
EP2176939A4 (en) Increasing the q factor of a resonator
EP2452395A4 (en) Multi-mode resonant filter
IL214925A0 (en) Micro-mechanical resonator
EP2359436A4 (en) Tunable metamaterial antenna structures
GB0820814D0 (en) Tuned resonant circuits
GB2435720B (en) Frequency tunable liquid antenna
HK1156117A1 (en) Thermocompensated mechanical resonator
GB0900747D0 (en) Mechanical oscillator
EP2494689A4 (en) Nonlinear oscillator for vibration energy harvesting
HK1186301A1 (en) Tunable high-frequency filter
EP2289164A4 (en) Dual-band voltage-controlled oscillator arrangement
EP2643863A4 (en) Piezoelectric resonator
EP2415116A4 (en) Tunable inverted f antenna
HK1191137A1 (en) Microwave resonant cavity
EP2721435A4 (en) Micro-ring resonator
EP2497167A4 (en) Frequency tunable wire lasers