HK1149630A1 - Colloidal silica with modified surface and polishing composition for cmp containing the same - Google Patents

Colloidal silica with modified surface and polishing composition for cmp containing the same

Info

Publication number
HK1149630A1
HK1149630A1 HK11103608.5A HK11103608A HK1149630A1 HK 1149630 A1 HK1149630 A1 HK 1149630A1 HK 11103608 A HK11103608 A HK 11103608A HK 1149630 A1 HK1149630 A1 HK 1149630A1
Authority
HK
Hong Kong
Prior art keywords
same
colloidal silica
polishing composition
modified surface
cmp containing
Prior art date
Application number
HK11103608.5A
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of HK1149630A1 publication Critical patent/HK1149630A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/146—After-treatment of sols
    • C01B33/149—Coating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C09C1/3072—Treatment with macro-molecular organic compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
HK11103608.5A 2008-03-24 2011-04-11 Colloidal silica with modified surface and polishing composition for cmp containing the same HK1149630A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008075347 2008-03-24
PCT/JP2009/052467 WO2009119178A1 (en) 2008-03-24 2009-02-16 Colloidal silica with modified surface and polishing composition for cmp containing the same

Publications (1)

Publication Number Publication Date
HK1149630A1 true HK1149630A1 (en) 2011-10-07

Family

ID=41113386

Family Applications (1)

Application Number Title Priority Date Filing Date
HK11103608.5A HK1149630A1 (en) 2008-03-24 2011-04-11 Colloidal silica with modified surface and polishing composition for cmp containing the same

Country Status (6)

Country Link
JP (1) JP4521058B2 (en)
KR (1) KR101180225B1 (en)
CN (1) CN101981665B (en)
HK (1) HK1149630A1 (en)
TW (1) TWI439496B (en)
WO (1) WO2009119178A1 (en)

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EP2500929B1 (en) * 2009-11-11 2018-06-20 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
JP5481166B2 (en) * 2009-11-11 2014-04-23 株式会社クラレ Slurries for chemical mechanical polishing
KR101243331B1 (en) 2010-12-17 2013-03-13 솔브레인 주식회사 Chemical-mechanical polishing slurry composition and method for manufacturing semiconductor device by using the same
US8440097B2 (en) * 2011-03-03 2013-05-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable, water soluble cellulose free chemical mechanical polishing composition
US8435896B2 (en) * 2011-03-03 2013-05-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stable, concentratable chemical mechanical polishing composition and methods relating thereto
CN103620747B (en) 2011-06-14 2017-07-28 福吉米株式会社 Composition for polishing
CN102504610B (en) * 2011-09-22 2013-12-11 航天特种材料及工艺技术研究所 Method for improving dispersity of SiO2 nanoparticles in phenolic resin solution
KR101147855B1 (en) * 2011-10-13 2012-05-24 주식회사 한나노텍 Manufacturing method of globular hybrid particles having the structure of silica core polymer shell
JP5882024B2 (en) * 2011-11-01 2016-03-09 花王株式会社 Polishing liquid composition
CN102660195B (en) * 2012-05-02 2014-04-02 常熟奥首光电材料有限公司 Surface modified nano-abrasive silicon slice polishing liquid
DE112013005268T5 (en) 2012-11-02 2015-09-24 Fujimi Incorporated polishing composition
JP6054149B2 (en) * 2012-11-15 2016-12-27 株式会社フジミインコーポレーテッド Polishing composition
JP6057706B2 (en) * 2012-12-28 2017-01-11 株式会社フジミインコーポレーテッド Polishing composition
KR101427883B1 (en) * 2013-02-08 2014-08-07 주식회사 케이씨텍 Surface-modified abrasive particle, method for preparing the same and slurry composition having the same
JP2015000877A (en) * 2013-06-13 2015-01-05 株式会社Adeka Polishing carrier, polishing liquid composition, and polishing method
JP6243671B2 (en) * 2013-09-13 2017-12-06 株式会社フジミインコーポレーテッド Polishing composition
CN104528741B (en) * 2014-12-17 2016-08-24 北京科技大学 A kind of organic modified nano hole aerosil and preparation method thereof
US9803109B2 (en) * 2015-02-03 2017-10-31 Cabot Microelectronics Corporation CMP composition for silicon nitride removal
US10920084B2 (en) * 2015-07-10 2021-02-16 Evonik Operations Gmbh Metal oxide-containing dispersion with high salt stability
US10723628B2 (en) 2015-07-10 2020-07-28 Evonik Operations Gmbh SiO2 containing dispersion with high salt stability
CN108291137B (en) 2015-10-26 2021-01-12 赢创运营有限公司 Method for obtaining mineral oil using silica fluid
KR102079041B1 (en) * 2016-07-04 2020-02-20 오씨아이 주식회사 Etching solution for silicon substrate
JP7153566B2 (en) * 2017-01-11 2022-10-14 株式会社フジミインコーポレーテッド Polishing composition
JP6901297B2 (en) * 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド Polishing composition
JP2020075830A (en) * 2018-11-07 2020-05-21 三菱ケミカル株式会社 Method for producing silica sol and method for suppressing intermediate products in silica sol
CN109590820B (en) * 2019-01-02 2021-07-06 中国科学院上海光学精密机械研究所 Method for processing surface roughness of superhard laser crystal
US11198797B2 (en) * 2019-01-24 2021-12-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing compositions having stabilized abrasive particles for polishing dielectric substrates
KR20200143144A (en) * 2019-06-14 2020-12-23 삼성전자주식회사 Slurry composition and method of manufacturing integrated circuit device using the same
JP2020203980A (en) * 2019-06-17 2020-12-24 日本キャボット・マイクロエレクトロニクス株式会社 Chemical mechanical polishing composition, rinse composition, chemical mechanical polishing method, and rinsing method
JP7452963B2 (en) * 2019-09-19 2024-03-19 株式会社フジミインコーポレーテッド Slurry for wet blasting
KR102525287B1 (en) * 2019-10-18 2023-04-24 삼성에스디아이 주식회사 Cmp slurry composition for polishing copper layer and method for polishing copper layer using the same
JP2023005463A (en) 2021-06-29 2023-01-18 株式会社フジミインコーポレーテッド Surface-modified colloidal silica and polishing composition comprising the same
CN113999520A (en) * 2021-12-21 2022-02-01 中国人民解放军63919部队 Transparent rubber airtight material and preparation method and application thereof
CN114560468B (en) * 2022-02-25 2022-09-16 金三江(肇庆)硅材料股份有限公司 Silicon dioxide for chemical mechanical polishing and preparation method and application thereof
WO2023183100A1 (en) * 2022-03-24 2023-09-28 Cmc Materials, Inc. Dual additive polishing composition for glass substrates
TW202403007A (en) * 2022-03-28 2024-01-16 日商Jsr 股份有限公司 Method for producing abrasive grains, composition for chemical mechanical polishing, and polishing method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3235864B2 (en) * 1992-03-28 2001-12-04 触媒化成工業株式会社 Inorganic oxide colloid particles
WO2001055028A1 (en) * 2000-01-25 2001-08-02 Nippon Aerosil Co., Ltd. Oxide powder and method for preparing the same, and product using the same
JP2005154222A (en) * 2003-11-27 2005-06-16 Tokuyama Corp Particulate silica
TWI276171B (en) * 2004-04-12 2007-03-11 Hitachi Chemical Co Ltd Metal polishing slurry and polishing method thereof
JP2007299942A (en) * 2006-04-28 2007-11-15 Fujifilm Corp Metal polishing composition, and chemical-mechanical polishing method using it

Also Published As

Publication number Publication date
JP2009256184A (en) 2009-11-05
JP4521058B2 (en) 2010-08-11
TWI439496B (en) 2014-06-01
TW200940606A (en) 2009-10-01
CN101981665B (en) 2012-11-21
CN101981665A (en) 2011-02-23
KR101180225B1 (en) 2012-09-05
KR20100137537A (en) 2010-12-30
WO2009119178A1 (en) 2009-10-01

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20170216