HK1135797A1 - Low forward voltage drop transient voltage suppressor and method of fabricating - Google Patents

Low forward voltage drop transient voltage suppressor and method of fabricating

Info

Publication number
HK1135797A1
HK1135797A1 HK10103707.6A HK10103707A HK1135797A1 HK 1135797 A1 HK1135797 A1 HK 1135797A1 HK 10103707 A HK10103707 A HK 10103707A HK 1135797 A1 HK1135797 A1 HK 1135797A1
Authority
HK
Hong Kong
Prior art keywords
fabricating
low forward
voltage drop
suppressor
forward voltage
Prior art date
Application number
HK10103707.6A
Other languages
English (en)
Inventor
Lung-Ching Kao
Pu-Ju Kung
Yu-Ju Yu
Original Assignee
Vishay Gen Semiconductor Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Gen Semiconductor Llc filed Critical Vishay Gen Semiconductor Llc
Publication of HK1135797A1 publication Critical patent/HK1135797A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0817—Thyristors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Rectifiers (AREA)
HK10103707.6A 2006-06-23 2010-04-16 Low forward voltage drop transient voltage suppressor and method of fabricating HK1135797A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80568906P 2006-06-23 2006-06-23
PCT/US2007/014320 WO2008002421A2 (en) 2006-06-23 2007-06-20 Low forward voltage drop transient voltage suppressor and method of fabricating

Publications (1)

Publication Number Publication Date
HK1135797A1 true HK1135797A1 (en) 2010-06-11

Family

ID=38786998

Family Applications (1)

Application Number Title Priority Date Filing Date
HK10103707.6A HK1135797A1 (en) 2006-06-23 2010-04-16 Low forward voltage drop transient voltage suppressor and method of fabricating

Country Status (7)

Country Link
US (2) US8111495B2 (ja)
EP (1) EP2033225A2 (ja)
JP (2) JP2009541996A (ja)
CN (1) CN101563784B (ja)
HK (1) HK1135797A1 (ja)
TW (1) TWI346392B (ja)
WO (1) WO2008002421A2 (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8111495B2 (en) * 2006-06-23 2012-02-07 Vishay General Semiconductor, Llc Low forward voltage drop transient voltage suppressor and method of fabricating
CN102142433A (zh) * 2011-03-01 2011-08-03 上海旭福电子有限公司 瞬变电压抑制二极管和肖特基二极管组合的晶体管
JP2013115794A (ja) * 2011-12-01 2013-06-10 Yazaki Corp リレー装置
CN102456719B (zh) * 2011-12-29 2014-02-26 东南大学 一种可提高pn结反向击穿电压的装置
JP6213006B2 (ja) * 2013-07-19 2017-10-18 富士通セミコンダクター株式会社 半導体装置
US9224702B2 (en) * 2013-12-12 2015-12-29 Amazing Microelectronic Corp. Three-dimension (3D) integrated circuit (IC) package
US10103540B2 (en) * 2014-04-24 2018-10-16 General Electric Company Method and system for transient voltage suppression devices with active control
CN105261616B (zh) 2015-09-22 2018-05-11 矽力杰半导体技术(杭州)有限公司 瞬态电压抑制器及其制造方法
US9949326B2 (en) * 2016-06-08 2018-04-17 Texas Instruments Incorporated Predictive LED forward voltage for a PWM current loop
CN106206574A (zh) * 2016-07-27 2016-12-07 电子科技大学 三端自带防护功能的垂直型恒流器件及其制造方法
CN106024912A (zh) * 2016-07-27 2016-10-12 电子科技大学 三端自带防护功能的垂直型恒流器件及其制造方法
FR3122769A1 (fr) * 2021-05-07 2022-11-11 Stmicroelectronics (Tours) Sas Dispositif de suppression de tensions transitoires unidirectionnel sans conduction en direct

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674761A (en) * 1996-05-02 1997-10-07 Etron Technology, Inc. Method of making ESD protection device structure for low supply voltage applications
WO1998035417A1 (en) 1997-02-07 1998-08-13 Cooper Industries, Inc. Spark gap transient voltage suppressor and method of making spark gap transient voltage suppressor
US6489660B1 (en) 2001-05-22 2002-12-03 General Semiconductor, Inc. Low-voltage punch-through bi-directional transient-voltage suppression devices
US20040075160A1 (en) 2002-10-18 2004-04-22 Jack Eng Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation
DE102004053761A1 (de) * 2004-11-08 2006-05-18 Robert Bosch Gmbh Halbleitereinrichtung und Verfahren für deren Herstellung
US20060278889A1 (en) * 2005-06-09 2006-12-14 Lite-On Semiconductor Corp. Power rectifier and manufacturing method thereof
US20080068868A1 (en) * 2005-11-29 2008-03-20 Advanced Analogic Technologies, Inc. Power MESFET Rectifier
US8111495B2 (en) * 2006-06-23 2012-02-07 Vishay General Semiconductor, Llc Low forward voltage drop transient voltage suppressor and method of fabricating

Also Published As

Publication number Publication date
CN101563784B (zh) 2011-04-20
US8111495B2 (en) 2012-02-07
CN101563784A (zh) 2009-10-21
US8982524B2 (en) 2015-03-17
US20080013240A1 (en) 2008-01-17
EP2033225A2 (en) 2009-03-11
JP2013080946A (ja) 2013-05-02
WO2008002421A2 (en) 2008-01-03
JP2009541996A (ja) 2009-11-26
US20120200975A1 (en) 2012-08-09
TWI346392B (en) 2011-08-01
WO2008002421A3 (en) 2008-02-14
TW200818518A (en) 2008-04-16

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