HK1128835A1 - Method of forming a signal level translator and structure therefor - Google Patents

Method of forming a signal level translator and structure therefor

Info

Publication number
HK1128835A1
HK1128835A1 HK09106794.6A HK09106794A HK1128835A1 HK 1128835 A1 HK1128835 A1 HK 1128835A1 HK 09106794 A HK09106794 A HK 09106794A HK 1128835 A1 HK1128835 A1 HK 1128835A1
Authority
HK
Hong Kong
Prior art keywords
forming
signal level
level translator
structure therefor
therefor
Prior art date
Application number
HK09106794.6A
Other languages
English (en)
Inventor
Hassan Chaoui
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Publication of HK1128835A1 publication Critical patent/HK1128835A1/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors
    • H03K3/356113Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
HK09106794.6A 2006-04-17 2009-07-24 Method of forming a signal level translator and structure therefor HK1128835A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2006/014297 WO2007120130A1 (en) 2006-04-17 2006-04-17 Method of forming a signal level translator and structure therefor

Publications (1)

Publication Number Publication Date
HK1128835A1 true HK1128835A1 (en) 2009-11-06

Family

ID=37648151

Family Applications (1)

Application Number Title Priority Date Filing Date
HK09106794.6A HK1128835A1 (en) 2006-04-17 2009-07-24 Method of forming a signal level translator and structure therefor

Country Status (6)

Country Link
US (1) US7737754B2 (ko)
KR (1) KR101223917B1 (ko)
CN (1) CN101379702B (ko)
HK (1) HK1128835A1 (ko)
TW (1) TWI431938B (ko)
WO (1) WO2007120130A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102957415B (zh) * 2011-08-29 2017-04-12 中兴通讯股份有限公司 一种电平转换的方法及系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100218506B1 (ko) * 1996-12-14 1999-09-01 윤종용 액정 표시 장치용 레벨 시프트 회로
JP3481121B2 (ja) * 1998-03-20 2003-12-22 松下電器産業株式会社 レベルシフト回路
IT1304060B1 (it) * 1998-12-29 2001-03-07 St Microelectronics Srl Variatore di livello per circuiteria a tensione d'alimentazionemultipla
AU2319600A (en) * 2000-01-27 2001-08-07 Hitachi Limited Semiconductor device
US6677798B2 (en) * 2002-02-07 2004-01-13 Faraday Technology Corp. High speed voltage level shifter
FR2837996A1 (fr) * 2002-03-29 2003-10-03 Koninkl Philips Electronics Nv Convertisseur de tension a transistors mos
CN100397464C (zh) * 2003-11-03 2008-06-25 联咏科技股份有限公司 电压电平转换器

Also Published As

Publication number Publication date
TW200818710A (en) 2008-04-16
US7737754B2 (en) 2010-06-15
CN101379702A (zh) 2009-03-04
KR101223917B1 (ko) 2013-01-18
WO2007120130A1 (en) 2007-10-25
US20090102537A1 (en) 2009-04-23
TWI431938B (zh) 2014-03-21
KR20090004998A (ko) 2009-01-12
CN101379702B (zh) 2012-04-18

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210417