HK1047821A1 - 摻雜iii-v族化合物層的結構和方法 - Google Patents

摻雜iii-v族化合物層的結構和方法

Info

Publication number
HK1047821A1
HK1047821A1 HK02109334.4A HK02109334A HK1047821A1 HK 1047821 A1 HK1047821 A1 HK 1047821A1 HK 02109334 A HK02109334 A HK 02109334A HK 1047821 A1 HK1047821 A1 HK 1047821A1
Authority
HK
Hong Kong
Prior art keywords
doping
iii
compounds
Prior art date
Application number
HK02109334.4A
Other languages
English (en)
Inventor
Springthorpe Anthony
W Streater Richard
Joshi Aniket
Original Assignee
布克哈姆技術公共有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 布克哈姆技術公共有限公司 filed Critical 布克哈姆技術公共有限公司
Publication of HK1047821A1 publication Critical patent/HK1047821A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
HK02109334.4A 2000-12-21 2002-12-24 摻雜iii-v族化合物層的結構和方法 HK1047821A1 (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/741,350 US6653213B2 (en) 2000-12-21 2000-12-21 Structure and method for doping of III-V compounds

Publications (1)

Publication Number Publication Date
HK1047821A1 true HK1047821A1 (zh) 2003-03-07

Family

ID=24980364

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02109334.4A HK1047821A1 (zh) 2000-12-21 2002-12-24 摻雜iii-v族化合物層的結構和方法

Country Status (3)

Country Link
US (1) US6653213B2 (zh)
EP (1) EP1217665A3 (zh)
HK (1) HK1047821A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876686B2 (en) * 2003-02-24 2005-04-05 Agilent Technologies, Inc. Method of fabricating active layers in a laser utilizing InP-based active regions
TWI268033B (en) * 2005-12-28 2006-12-01 Landmark Optoelectronics Corp Active-layer energy band of laser diode and monomer structure forming the active layer
US8030188B2 (en) * 2008-12-05 2011-10-04 Electronics And Telecommunications Research Institute Methods of forming a compound semiconductor device including a diffusion region
EP2202784B1 (en) * 2008-12-29 2017-10-25 Imec Method for manufacturing a junction
US20210257463A1 (en) * 2018-06-20 2021-08-19 Lawrence Livermore National Security, Llc Field assisted interfacial diffusion doping through heterostructure design
CN109920883B (zh) * 2019-01-23 2020-10-16 华灿光电（浙江）有限公司 氮化镓基发光二极管外延片及其制造方法
CN111785614B (zh) * 2020-06-18 2022-04-12 上海空间电源研究所 一种降低电压损耗的键合结构及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3918094A1 (de) * 1989-06-02 1990-12-06 Aixtron Gmbh Verfahren zur herstellung von dotierten halbleiterschichten
US5169798A (en) 1990-06-28 1992-12-08 At&T Bell Laboratories Forming a semiconductor layer using molecular beam epitaxy
US5319657A (en) * 1991-10-08 1994-06-07 Matsushita Electric Industrial Co., Ltd. Semiconductor laser of modulation doping quantum well structure with stopper against dopant dispersion and manufacturing method thereof
FR2701165B1 (fr) * 1993-02-04 1995-03-31 Alcatel Nv Procédé de fabrication d'un composant semi-conducteur notamment d'un laser a arête enterrée, et composant fabriqué par ce procédé.
US5753545A (en) * 1994-12-01 1998-05-19 Hughes Electronics Corporation Effective constant doping in a graded compositional alloy
JP3458349B2 (ja) * 1996-11-19 2003-10-20 株式会社デンソー 半導体装置
US6240114B1 (en) * 1998-08-07 2001-05-29 Agere Systems Optoelectronics Guardian Corp. Multi-quantum well lasers with selectively doped barriers
GB2351390A (en) * 1999-06-16 2000-12-27 Sharp Kk A semiconductor material comprising two dopants

Also Published As

Publication number Publication date
EP1217665A2 (en) 2002-06-26
US6653213B2 (en) 2003-11-25
EP1217665A3 (en) 2003-05-14
US20020081764A1 (en) 2002-06-27

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