GR3001855T3 - Method for forming a deposited film - Google Patents

Method for forming a deposited film

Info

Publication number
GR3001855T3
GR3001855T3 GR91400458T GR910400458T GR3001855T3 GR 3001855 T3 GR3001855 T3 GR 3001855T3 GR 91400458 T GR91400458 T GR 91400458T GR 910400458 T GR910400458 T GR 910400458T GR 3001855 T3 GR3001855 T3 GR 3001855T3
Authority
GR
Greece
Prior art keywords
forming
deposited film
deposited
film
Prior art date
Application number
GR91400458T
Other languages
English (en)
Inventor
Shunichi Ishihara
Junichi Hanna
Isamu Shimizu
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60238495A external-priority patent/JPH0645883B2/ja
Priority claimed from JP60238902A external-priority patent/JPH0647729B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Publication of GR3001855T3 publication Critical patent/GR3001855T3/el

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
GR91400458T 1985-10-24 1991-04-25 Method for forming a deposited film GR3001855T3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60238495A JPH0645883B2 (ja) 1985-10-24 1985-10-24 堆積膜形成法
JP60238902A JPH0647729B2 (ja) 1985-10-25 1985-10-25 堆積膜形成法

Publications (1)

Publication Number Publication Date
GR3001855T3 true GR3001855T3 (en) 1992-11-23

Family

ID=26533725

Family Applications (1)

Application Number Title Priority Date Filing Date
GR91400458T GR3001855T3 (en) 1985-10-24 1991-04-25 Method for forming a deposited film

Country Status (6)

Country Link
US (1) US4837048A (el)
EP (1) EP0264505B1 (el)
CA (1) CA1315615C (el)
DE (1) DE3678960D1 (el)
ES (1) ES2022810B3 (el)
GR (1) GR3001855T3 (el)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783374A (en) * 1987-11-16 1988-11-08 Ovonic Synthetic Materials Company Coated article and method of manufacturing the article
FR2675517B1 (fr) * 1991-04-19 1994-03-04 Neuville Stephane Procede pour le depot sur au moins une piece, notamment une piece metallique, d'une couche dure a base de pseudo carbone diamant ainsi que piece revetue d'une telle couche.
EP0509875A1 (fr) * 1991-04-19 1992-10-21 Société dite CARBIONIC SYSTEME Procédé pour le dépôt sur au moins une pièce, notamment une pièce métallique, d'une couche dure à base de pseudo carbone diamant ainsi que pièce revêtue d'une telle couche
CN104136656B (zh) * 2012-02-23 2016-11-09 皮尔金顿集团有限公司 在玻璃基板上沉积二氧化硅涂层的化学气相沉积工艺

Family Cites Families (45)

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US31708A (en) * 1861-03-19 Improved device for coating pins
US2552626A (en) * 1948-02-17 1951-05-15 Bell Telephone Labor Inc Silicon-germanium resistor and method of making it
US3083550A (en) * 1961-02-23 1963-04-02 Alloyd Corp Process of coating vitreous filaments
US3188230A (en) * 1961-03-16 1965-06-08 Alloyd Corp Vapor deposition process and device
US3203827A (en) * 1962-06-26 1965-08-31 Union Carbide Corp Chromium plating process
US3224912A (en) * 1962-07-13 1965-12-21 Monsanto Co Use of hydrogen halide and hydrogen in separate streams as carrier gases in vapor deposition of ii-vi compounds
US3218204A (en) * 1962-07-13 1965-11-16 Monsanto Co Use of hydrogen halide as a carrier gas in forming ii-vi compound from a crude ii-vicompound
US3306768A (en) * 1964-01-08 1967-02-28 Motorola Inc Method of forming thin oxide films
US3466191A (en) * 1966-11-07 1969-09-09 Us Army Method of vacuum deposition of piezoelectric films of cadmium sulfide
US3506556A (en) * 1968-02-28 1970-04-14 Ppg Industries Inc Sputtering of metal oxide films in the presence of hydrogen and oxygen
US3655429A (en) * 1969-04-16 1972-04-11 Westinghouse Electric Corp Method of forming thin insulating films particularly for piezoelectric transducers
US3664866A (en) * 1970-04-08 1972-05-23 North American Rockwell Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
US3870558A (en) * 1971-08-17 1975-03-11 Tokyo Shibouro Electric Co Ltd Process for preparing a layer of compounds of groups II and VI
US3850679A (en) * 1972-12-15 1974-11-26 Ppg Industries Inc Chemical vapor deposition of coatings
US3984587A (en) * 1973-07-23 1976-10-05 Rca Corporation Chemical vapor deposition of luminescent films
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
US4146657A (en) * 1976-11-01 1979-03-27 Gordon Roy G Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide
USRE31708E (en) 1976-11-01 1984-10-16 Method of depositing electrically conductive, infra-red reflective, transparent coatings of stannic oxide
US4206252A (en) * 1977-04-04 1980-06-03 Gordon Roy G Deposition method for coating glass and the like
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
GB2038883B (en) * 1978-11-09 1982-12-08 Standard Telephones Cables Ltd Metallizing semiconductor devices
GB2038086A (en) * 1978-12-19 1980-07-16 Standard Telephones Cables Ltd Amorphous semiconductor devices
US4239811A (en) * 1979-08-16 1980-12-16 International Business Machines Corporation Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction
US4282267A (en) * 1979-09-20 1981-08-04 Western Electric Co., Inc. Methods and apparatus for generating plasmas
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
EP0040939B1 (en) * 1980-05-27 1985-01-02 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Manufacture of cadmium mercury telluride
JPS5710920A (en) * 1980-06-23 1982-01-20 Canon Inc Film forming process
US4522663A (en) * 1980-09-09 1985-06-11 Sovonics Solar Systems Method for optimizing photoresponsive amorphous alloys and devices
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
US4357179A (en) * 1980-12-23 1982-11-02 Bell Telephone Laboratories, Incorporated Method for producing devices comprising high density amorphous silicon or germanium layers by low pressure CVD technique
DE3208494C2 (de) * 1981-03-09 1993-09-30 Canon Kk Verfahren zur Herstellung eines fotoleitfähigen Elements
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4359490A (en) * 1981-07-13 1982-11-16 Fairchild Camera & Instrument Corp. Method for LPCVD co-deposition of metal and silicon to form metal silicide
JPS6053745B2 (ja) * 1981-07-31 1985-11-27 アルバツク成膜株式会社 二元蒸着によつて不均質光学的薄膜を形成する方法
US4652463A (en) * 1982-03-29 1987-03-24 Hughes Aircraft Process for depositing a conductive oxide layer
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US4615905A (en) * 1982-09-24 1986-10-07 Sovonics Solar Systems, Inc. Method of depositing semiconductor films by free radical generation
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
JPS59119359A (ja) * 1982-12-27 1984-07-10 Canon Inc 電子写真用光導電部材
JPS6026664A (ja) * 1983-07-22 1985-02-09 Canon Inc アモルフアスシリコン堆積膜形成法
US4637938A (en) * 1983-08-19 1987-01-20 Energy Conversion Devices, Inc. Methods of using selective optical excitation in deposition processes and the detection of new compositions
US4526809A (en) * 1983-10-19 1985-07-02 University Of Delaware Process and apparatus for formation of photovoltaic compounds
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
JPS62136871A (ja) * 1985-12-11 1987-06-19 Canon Inc 光センサ−、その製造方法及びその製造装置

Also Published As

Publication number Publication date
AU597004B2 (en) 1990-05-24
AU6427086A (en) 1987-04-30
CA1315615C (en) 1993-04-06
EP0264505B1 (en) 1991-04-24
ES2022810B3 (es) 1991-12-16
DE3678960D1 (de) 1991-05-29
US4837048A (en) 1989-06-06
EP0264505A1 (en) 1988-04-27

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