GR1007196B - Συνδυασμενος οδηγος για μνημες και διεπαφες μνημων διπλου ρυθμου δεδομενων τυπου 2 και 3 - Google Patents

Συνδυασμενος οδηγος για μνημες και διεπαφες μνημων διπλου ρυθμου δεδομενων τυπου 2 και 3

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Publication number
GR1007196B
GR1007196B GR20100100052A GR20100100052A GR1007196B GR 1007196 B GR1007196 B GR 1007196B GR 20100100052 A GR20100100052 A GR 20100100052A GR 20100100052 A GR20100100052 A GR 20100100052A GR 1007196 B GR1007196 B GR 1007196B
Authority
GR
Greece
Prior art keywords
driver
combined
ddr2
ddr3
termination
Prior art date
Application number
GR20100100052A
Other languages
English (en)
Inventor
Μιχαηλ Μπιρμπας
Ιωαννης Κικιδης
Φωτιος Πλεσσας
Ευθυμιος Δαβραζος
Original Assignee
Αναλογικα Ολοκληρωμενα Ηλεκτρονικα Συστηματα Α.Ε. (Με Δ.Τ. Analogies S.A.),
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Αναλογικα Ολοκληρωμενα Ηλεκτρονικα Συστηματα Α.Ε. (Με Δ.Τ. Analogies S.A.), filed Critical Αναλογικα Ολοκληρωμενα Ηλεκτρονικα Συστηματα Α.Ε. (Με Δ.Τ. Analogies S.A.),
Priority to GR20100100052A priority Critical patent/GR1007196B/el
Priority to US13/698,494 priority patent/US9299401B2/en
Priority to PCT/GR2011/000005 priority patent/WO2011092526A1/en
Publication of GR1007196B publication Critical patent/GR1007196B/el

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/022—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in I/O circuitry
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1066—Output synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/22—Control and timing of internal memory operations
    • G11C2207/2254—Calibration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Logic Circuits (AREA)
  • Dram (AREA)

Abstract

Η εφεύρεση έγκειται σε ηλεκτρονικό ολοκληρωμένο κύκλωμα συνδυασμένου DDR2 DDR3 οδηγού SSTL που αποτελείται από το υποσύστημα συνενωμένου οδηγού εξόδου οδηγού τερματισμού (1), το υποσύστημα οδηγού εισόδου (2), το υποσύστημα μηχανισμού διόρθωσης (3) τα οποία υλοποιούνται στο ίδιο στοιχείο ημιαγωγού πυριτίου (on chip), καθώς και μέθοδο για τον σχεδιασμό του συνδυασμένου DDR2 DDR3 οδηγού SSTL (4). Το κύκλωμα περιλαμβάνει διακοπτικό μηχανισμό και είναι σχεδιασμένο με τρόπο ώστε να μπορεί να υποστηρίξει λειτουργία τόσο σε DDR2 όσο και σε DDR3 διεπαφές μνήμης. Χρησιμοποιεί πολλαπλές δομές ανύψωσης και υποβιβασμού τάσης σε έναν συνενωμένο οδηγό εξόδου οδηγό τερματισμού για την ελαχιστοποίηση της χωρητικότητας εισόδου και την επίτευξη όλων των απαραίτητων αντιστάσεων εξόδου και τερματισμού. Ο συνδυασμένος DDR2 DDR3 οδηγός αυτός χρησιμοποιείται σε σύνθετα ολοκληρωμένα συστήματα και εφαρμογές σηματοδοσίας υψηλών ταχυτήτων όπου χρειάζεται μηχανισμός τερματισμού όπως οι DDR-SDRAM.
GR20100100052A 2010-01-27 2010-01-27 Συνδυασμενος οδηγος για μνημες και διεπαφες μνημων διπλου ρυθμου δεδομενων τυπου 2 και 3 GR1007196B (el)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GR20100100052A GR1007196B (el) 2010-01-27 2010-01-27 Συνδυασμενος οδηγος για μνημες και διεπαφες μνημων διπλου ρυθμου δεδομενων τυπου 2 και 3
US13/698,494 US9299401B2 (en) 2010-01-27 2011-01-27 Driver for DDR2/3 memory interfaces
PCT/GR2011/000005 WO2011092526A1 (en) 2010-01-27 2011-01-27 A driver for ddr2/3 memory interfaces

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GR20100100052A GR1007196B (el) 2010-01-27 2010-01-27 Συνδυασμενος οδηγος για μνημες και διεπαφες μνημων διπλου ρυθμου δεδομενων τυπου 2 και 3

Publications (1)

Publication Number Publication Date
GR1007196B true GR1007196B (el) 2011-02-16

Family

ID=42676688

Family Applications (1)

Application Number Title Priority Date Filing Date
GR20100100052A GR1007196B (el) 2010-01-27 2010-01-27 Συνδυασμενος οδηγος για μνημες και διεπαφες μνημων διπλου ρυθμου δεδομενων τυπου 2 και 3

Country Status (3)

Country Link
US (1) US9299401B2 (el)
GR (1) GR1007196B (el)
WO (1) WO2011092526A1 (el)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090034344A1 (en) * 2007-08-02 2009-02-05 Rambus, Inc. Methods and apparatus for strobe signaling and edge detection thereof
US20090259872A1 (en) * 2008-04-10 2009-10-15 Advanced Micro Devices, Inc. Programmable data sampling receiver for digital data signals

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009014796A1 (en) * 2007-07-19 2009-01-29 Rambus Inc. Reference voltage and impedance calibration in a multi-mode interface
US7876123B2 (en) * 2007-10-09 2011-01-25 Lsi Corporation High speed multiple memory interface I/O cell

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090034344A1 (en) * 2007-08-02 2009-02-05 Rambus, Inc. Methods and apparatus for strobe signaling and edge detection thereof
US20090259872A1 (en) * 2008-04-10 2009-10-15 Advanced Micro Devices, Inc. Programmable data sampling receiver for digital data signals

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHUROO (CHUL-WOO) PARK ET AL.: "A 512-Mb DDR3 SDRAM Prototype With Cio Minimization and Self-Calibration Techniques", IEEE J. SOLID-STATE CIRCUITS, vol. 41, no. 4, 1 April 2006 (2006-04-01), pages 831 - 838, XP002600399 *
TODD FARRELL: "Core architecture doubles mem data rate", ELECTRONIC ENGINEERING TIMES ASIA, 16 December 2005 (2005-12-16), XP002600400 *

Also Published As

Publication number Publication date
US20130103898A1 (en) 2013-04-25
US9299401B2 (en) 2016-03-29
WO2011092526A1 (en) 2011-08-04

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Effective date: 20110317