GB997996A - Field effect device and method of manufacturing the same - Google Patents

Field effect device and method of manufacturing the same

Info

Publication number
GB997996A
GB997996A GB1981/63A GB198163A GB997996A GB 997996 A GB997996 A GB 997996A GB 1981/63 A GB1981/63 A GB 1981/63A GB 198163 A GB198163 A GB 198163A GB 997996 A GB997996 A GB 997996A
Authority
GB
United Kingdom
Prior art keywords
type
layers
regions
wafer
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1981/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of GB997996A publication Critical patent/GB997996A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Junction Field-Effect Transistors (AREA)
GB1981/63A 1962-02-19 1963-01-16 Field effect device and method of manufacturing the same Expired GB997996A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17397062A 1962-02-19 1962-02-19

Publications (1)

Publication Number Publication Date
GB997996A true GB997996A (en) 1965-07-14

Family

ID=32092255

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1981/63A Expired GB997996A (en) 1962-02-19 1963-01-16 Field effect device and method of manufacturing the same

Country Status (5)

Country Link
BE (1) BE627499A (enExample)
DE (1) DE1237693B (enExample)
FR (1) FR1347395A (enExample)
GB (1) GB997996A (enExample)
NL (1) NL288745A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0268426A3 (en) * 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
USRE34821E (en) * 1986-11-17 1995-01-03 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614861C3 (de) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL99536C (enExample) * 1951-03-07 1900-01-01
FR1210880A (fr) * 1958-08-29 1960-03-11 Perfectionnements aux transistors à effet de champ
FR1293699A (fr) * 1960-05-02 1962-05-18 Westinghouse Electric Corp Dispositif semi-conducteur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0268426A3 (en) * 1986-11-17 1989-03-15 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
US5012305A (en) * 1986-11-17 1991-04-30 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits
USRE34821E (en) * 1986-11-17 1995-01-03 Linear Technology Corporation High speed junction field effect transistor for use in bipolar integrated circuits

Also Published As

Publication number Publication date
DE1237693B (de) 1967-03-30
FR1347395A (fr) 1963-12-27
BE627499A (enExample) 1963-05-15
NL288745A (enExample)

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