GB9919702D0 - Particle multibeam lithography - Google Patents

Particle multibeam lithography

Info

Publication number
GB9919702D0
GB9919702D0 GBGB9919702.2A GB9919702A GB9919702D0 GB 9919702 D0 GB9919702 D0 GB 9919702D0 GB 9919702 A GB9919702 A GB 9919702A GB 9919702 D0 GB9919702 D0 GB 9919702D0
Authority
GB
United Kingdom
Prior art keywords
sub
optical system
aperture
multibeam
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9919702.2A
Other versions
GB2340991B (en
GB2340991A (en
GB2340991A8 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ims Ionen Mikrofabrikations Systems GmbH
Original Assignee
Ims Ionen Mikrofabrikations Systems GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Publication of GB2340991A8 publication Critical patent/GB2340991A8/en
Application filed by Ims Ionen Mikrofabrikations Systems GmbH filed Critical Ims Ionen Mikrofabrikations Systems GmbH
Publication of GB9919702D0 publication Critical patent/GB9919702D0/en
Publication of GB2340991A publication Critical patent/GB2340991A/en
Application granted granted Critical
Publication of GB2340991B publication Critical patent/GB2340991B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)

Abstract

In a particle multibeam lithography apparatus an illumination system ( 242 ) having a particle source ( 203 ) produces an illuminating beam ( 205 ) of electrically charged particles, and a multibeam optical system ( 208 ) positioned after the illumination system ( 242 ) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate ( 220 ), wherein for each sub-beam ( 207 ) a deflection unit ( 210 ) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface. Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at least 20:1.
GB9919702A 1998-08-19 1999-08-19 Particle multibeam lithography Expired - Lifetime GB2340991B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT141598 1998-08-19

Publications (4)

Publication Number Publication Date
GB2340991A8 GB2340991A8 (en)
GB9919702D0 true GB9919702D0 (en) 1999-10-20
GB2340991A GB2340991A (en) 2000-03-01
GB2340991B GB2340991B (en) 2000-12-13

Family

ID=3513406

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9919702A Expired - Lifetime GB2340991B (en) 1998-08-19 1999-08-19 Particle multibeam lithography

Country Status (3)

Country Link
US (1) US6989546B2 (en)
JP (1) JP2000252207A (en)
GB (1) GB2340991B (en)

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EP2019415B1 (en) * 2007-07-24 2016-05-11 IMS Nanofabrication AG Multi-beam source
US8715909B2 (en) * 2007-10-05 2014-05-06 Infineon Technologies Ag Lithography systems and methods of manufacturing using thereof
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
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US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
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US8670106B2 (en) 2008-09-23 2014-03-11 Pinebrook Imaging, Inc. Optical imaging writer system
US9405203B2 (en) 2008-09-23 2016-08-02 Applied Materials, Inc. Pixel blending for multiple charged-particle beam lithography
US8253923B1 (en) 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
US20110085968A1 (en) * 2009-10-13 2011-04-14 The Regents Of The University Of California Articles comprising nano-materials for geometry-guided stem cell differentiation and enhanced bone growth
US8294125B2 (en) * 2009-11-18 2012-10-23 Kla-Tencor Corporation High-sensitivity and high-throughput electron beam inspection column enabled by adjustable beam-limiting aperture
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Also Published As

Publication number Publication date
GB2340991B (en) 2000-12-13
JP2000252207A (en) 2000-09-14
US6989546B2 (en) 2006-01-24
GB2340991A (en) 2000-03-01
GB2340991A8 (en)
US20030209676A1 (en) 2003-11-13

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Legal Events

Date Code Title Description
713F Application for mention of inventor (sect. 13(1)/1977) allowed
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Expiry date: 20190818