GB989233A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB989233A
GB989233A GB46061/61A GB4606161A GB989233A GB 989233 A GB989233 A GB 989233A GB 46061/61 A GB46061/61 A GB 46061/61A GB 4606161 A GB4606161 A GB 4606161A GB 989233 A GB989233 A GB 989233A
Authority
GB
United Kingdom
Prior art keywords
silicon
gold
semi
strips
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46061/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of GB989233A publication Critical patent/GB989233A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB46061/61A 1960-12-26 1961-12-22 Improvements in or relating to semi-conductor devices Expired GB989233A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5022460 1960-12-26

Publications (1)

Publication Number Publication Date
GB989233A true GB989233A (en) 1965-04-14

Family

ID=12853058

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46061/61A Expired GB989233A (en) 1960-12-26 1961-12-22 Improvements in or relating to semi-conductor devices

Country Status (3)

Country Link
US (1) US3284676A (enExample)
GB (1) GB989233A (enExample)
NL (2) NL272814A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11319613B2 (en) 2020-08-18 2022-05-03 Enviro Metals, LLC Metal refinement

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3370208A (en) * 1964-03-25 1968-02-20 Nippon Telegraph & Telephone Thin film negative resistance semiconductor device
DE1225784B (de) * 1964-05-14 1966-09-29 Consortium Elektrochem Ind Halbleiter-Bauelement
DE1266894B (de) * 1965-03-03 1968-04-25 Danfoss As Sperrschichtfreies Halbleiterschaltelement
US3582830A (en) * 1967-09-08 1971-06-01 Polska Akademia Nauk Instytut Semiconductor device intended especially for microwave photodetectors

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2860218A (en) * 1954-02-04 1958-11-11 Gen Electric Germanium current controlling devices
US2871377A (en) * 1954-07-29 1959-01-27 Gen Electric Bistable semiconductor devices
US2897377A (en) * 1955-06-20 1959-07-28 Rca Corp Semiconductor surface treatments and devices made thereby
US3060018A (en) * 1960-04-01 1962-10-23 Gen Motors Corp Gold base alloy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11319613B2 (en) 2020-08-18 2022-05-03 Enviro Metals, LLC Metal refinement
US11578386B2 (en) 2020-08-18 2023-02-14 Enviro Metals, LLC Metal refinement

Also Published As

Publication number Publication date
NL121807C (enExample)
US3284676A (en) 1966-11-08
NL272814A (enExample)

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