GB988367A - Semiconductor devices and method of fabricating same - Google Patents

Semiconductor devices and method of fabricating same

Info

Publication number
GB988367A
GB988367A GB32336/61A GB3233661A GB988367A GB 988367 A GB988367 A GB 988367A GB 32336/61 A GB32336/61 A GB 32336/61A GB 3233661 A GB3233661 A GB 3233661A GB 988367 A GB988367 A GB 988367A
Authority
GB
United Kingdom
Prior art keywords
emitter
junction
exposed
zone
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32336/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB988367A publication Critical patent/GB988367A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/46—
    • H10P95/00—
    • H10W20/40—
    • H10W72/073—
    • H10W72/07336—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
  • Die Bonding (AREA)
GB32336/61A 1960-09-09 1961-09-08 Semiconductor devices and method of fabricating same Expired GB988367A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US55036A US3184823A (en) 1960-09-09 1960-09-09 Method of making silicon transistors

Publications (1)

Publication Number Publication Date
GB988367A true GB988367A (en) 1965-04-07

Family

ID=21995147

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32336/61A Expired GB988367A (en) 1960-09-09 1961-09-08 Semiconductor devices and method of fabricating same

Country Status (6)

Country Link
US (1) US3184823A (cg-RX-API-DMAC10.html)
BE (1) BE608008A (cg-RX-API-DMAC10.html)
DE (1) DE1439570A1 (cg-RX-API-DMAC10.html)
GB (1) GB988367A (cg-RX-API-DMAC10.html)
MY (1) MY6900281A (cg-RX-API-DMAC10.html)
NL (1) NL269092A (cg-RX-API-DMAC10.html)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3450581A (en) * 1963-04-04 1969-06-17 Texas Instruments Inc Process of coating a semiconductor with a mask and diffusing an impurity therein
GB1053406A (cg-RX-API-DMAC10.html) * 1963-05-18
NL135876C (cg-RX-API-DMAC10.html) * 1963-06-11
US3304594A (en) * 1963-08-15 1967-02-21 Motorola Inc Method of making integrated circuit by controlled process
US3264149A (en) * 1963-12-19 1966-08-02 Bell Telephone Labor Inc Method of making semiconductor devices
US3283218A (en) * 1964-04-03 1966-11-01 Philco Corp High frequency diode having semiconductive mesa
US3387189A (en) * 1964-04-20 1968-06-04 North American Rockwell High frequency diode with small spreading resistance
US3490963A (en) * 1964-05-18 1970-01-20 Sprague Electric Co Production of planar semiconductor devices by masking and diffusion
US3408237A (en) * 1964-06-30 1968-10-29 Ibm Ductile case-hardened steels
US3319139A (en) * 1964-08-18 1967-05-09 Hughes Aircraft Co Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion
US3388009A (en) * 1965-06-23 1968-06-11 Ion Physics Corp Method of forming a p-n junction by an ionic beam
US3372071A (en) * 1965-06-30 1968-03-05 Texas Instruments Inc Method of forming a small area junction semiconductor
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US3347720A (en) * 1965-10-21 1967-10-17 Bendix Corp Method of forming a semiconductor by masking and diffusion
DE1286641B (de) * 1966-08-26 1969-01-09 Bosch Gmbh Robert Verfahren zur Kontaktierung einer Halbleiteranordnung
NL169122C (nl) * 1970-02-26 1982-06-01 Toyo Electronics Ind Corp Halfgeleiderelement, omvattende een halfgeleiderplaatje met een door een isolerende laag bedekt hoofdvlak en met elektroden die zich ononderbroken uitstrekken over delen van de isolerende laag en aangrenzende delen van zijvlakken van het halfgeleiderplaatje, alsmede werkwijze voor het bevestigen van het halfgeleiderelement op een van aansluitklemmen voorziene montageplaat.
NL7013227A (cg-RX-API-DMAC10.html) * 1970-09-08 1972-03-10 Philips Nv
US3815223A (en) * 1971-02-08 1974-06-11 Signetics Corp Method for making semiconductor structure with dielectric and air isolation
US4358784A (en) * 1979-11-30 1982-11-09 International Rectifier Corporation Clad molybdenum disks for alloyed diode
US8810775B2 (en) * 2010-04-16 2014-08-19 Media Lario S.R.L. EUV mirror module with a nickel electroformed curved mirror

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE525387A (cg-RX-API-DMAC10.html) * 1952-12-29 1900-01-01
US2897421A (en) * 1954-08-11 1959-07-28 Westinghouse Electric Corp Phototransistor design
US2804405A (en) * 1954-12-24 1957-08-27 Bell Telephone Labor Inc Manufacture of silicon devices
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them
US2842841A (en) * 1955-06-13 1958-07-15 Philco Corp Method of soldering leads to semiconductor devices
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
NL251064A (cg-RX-API-DMAC10.html) * 1955-11-04
US2863105A (en) * 1955-11-10 1958-12-02 Hoffman Electronics Corp Rectifying device
US2945296A (en) * 1956-02-13 1960-07-19 Marley Co Method of affixing fins to tubing
US2879188A (en) * 1956-03-05 1959-03-24 Westinghouse Electric Corp Processes for making transistors
US2870049A (en) * 1956-07-16 1959-01-20 Rca Corp Semiconductor devices and method of making same
BE563088A (cg-RX-API-DMAC10.html) * 1957-02-25
NL233303A (cg-RX-API-DMAC10.html) * 1957-11-30
US2960417A (en) * 1958-07-23 1960-11-15 West Point Mfg Co Multiple photocells and method of making same
NL125412C (cg-RX-API-DMAC10.html) * 1959-04-15
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Also Published As

Publication number Publication date
DE1439570A1 (de) 1969-04-24
NL269092A (cg-RX-API-DMAC10.html) 1900-01-01
BE608008A (fr) 1962-03-08
MY6900281A (en) 1969-12-31
DE1764462A1 (de) 1971-09-23
US3184823A (en) 1965-05-25
DE1764462B2 (de) 1976-03-25

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