GB9821310D0 - Method of manufacturing optical waveguide device using inductively coupled plasma system - Google Patents

Method of manufacturing optical waveguide device using inductively coupled plasma system

Info

Publication number
GB9821310D0
GB9821310D0 GBGB9821310.1A GB9821310A GB9821310D0 GB 9821310 D0 GB9821310 D0 GB 9821310D0 GB 9821310 A GB9821310 A GB 9821310A GB 9821310 D0 GB9821310 D0 GB 9821310D0
Authority
GB
United Kingdom
Prior art keywords
optical waveguide
inductively coupled
coupled plasma
waveguide device
plasma system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9821310.1A
Other versions
GB2329873B (en
GB2329873A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019970050966A external-priority patent/KR19990030655A/en
Priority claimed from KR1019970050964A external-priority patent/KR19990030653A/en
Priority claimed from KR1019970050965A external-priority patent/KR100429850B1/en
Priority claimed from KR1019970050967A external-priority patent/KR19990030656A/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB9821310D0 publication Critical patent/GB9821310D0/en
Publication of GB2329873A publication Critical patent/GB2329873A/en
Application granted granted Critical
Publication of GB2329873B publication Critical patent/GB2329873B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12173—Masking

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Arc Welding In General (AREA)
GB9821310A 1997-10-02 1998-10-02 Method of manufacturing optical waveguide device using inductively coupled plasma system Expired - Fee Related GB2329873B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1019970050966A KR19990030655A (en) 1997-10-02 1997-10-02 Optical waveguide manufacturing method
KR1019970050964A KR19990030653A (en) 1997-10-02 1997-10-02 Optical waveguide manufacturing method
KR1019970050965A KR100429850B1 (en) 1997-10-02 1997-10-02 Method for fabricating optical waveguide, especially increasing resolution of the waveguide
KR1019970050967A KR19990030656A (en) 1997-10-02 1997-10-02 Optical waveguide manufacturing method

Publications (3)

Publication Number Publication Date
GB9821310D0 true GB9821310D0 (en) 1998-11-25
GB2329873A GB2329873A (en) 1999-04-07
GB2329873B GB2329873B (en) 1999-11-10

Family

ID=27483234

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9821310A Expired - Fee Related GB2329873B (en) 1997-10-02 1998-10-02 Method of manufacturing optical waveguide device using inductively coupled plasma system

Country Status (5)

Country Link
JP (1) JPH11167037A (en)
CN (1) CN1213782A (en)
CA (1) CA2249094A1 (en)
FR (1) FR2769376A1 (en)
GB (1) GB2329873B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100361097B1 (en) * 2000-12-13 2002-11-21 우리로광통신주식회사 Fabricating method of optical waveguide using inductively coupled plasma etcher
US20020158047A1 (en) * 2001-04-27 2002-10-31 Yiqiong Wang Formation of an optical component having smooth sidewalls
JP2005148468A (en) * 2003-11-17 2005-06-09 Sony Corp Optical waveguide, light source module and optical information processing device
KR101235834B1 (en) * 2010-12-08 2013-02-21 한국기계연구원 Method of forming protruding patterns using a polymer layer as a etching protection layer
WO2023056086A1 (en) * 2021-10-01 2023-04-06 PsiQuantum Corp. Patterning methods for photonic devices

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032844B2 (en) * 1977-06-16 1985-07-30 住友電気工業株式会社 Method of manufacturing optical waveguide
JPS592008A (en) * 1982-06-28 1984-01-07 Nippon Telegr & Teleph Corp <Ntt> Production of embedding type quartz optical waveguide
JPS63194206A (en) * 1987-02-09 1988-08-11 Nippon Telegr & Teleph Corp <Ntt> Manufacture of quartz optical waveguide
WO1991010341A1 (en) * 1990-01-04 1991-07-11 Savas Stephen E A low frequency inductive rf plasma reactor
JPH03291605A (en) * 1990-04-10 1991-12-20 Furukawa Electric Co Ltd:The Forming of optical waveguide
JPH04147201A (en) * 1990-10-11 1992-05-20 Sumitomo Electric Ind Ltd Quartz-based optical waveguide and its manufacture
JPH05215929A (en) * 1992-02-03 1993-08-27 Hitachi Cable Ltd Manufacture of glass waveguide
JPH05307125A (en) * 1992-04-28 1993-11-19 Japan Energy Corp Production of optical waveguide
EP0680072B1 (en) * 1994-04-28 2003-10-08 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5607542A (en) * 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching
KR100322695B1 (en) * 1995-03-20 2002-05-13 윤종용 Method for manufacturing ferroelectric capacitor
JPH08262250A (en) * 1995-03-22 1996-10-11 Toshiba Mach Co Ltd Production of optical waveguide and device therefor
JP3951003B2 (en) * 1995-11-17 2007-08-01 俊夫 後藤 Plasma processing apparatus and method
JP3492833B2 (en) * 1995-11-28 2004-02-03 リコー光学株式会社 Manufacturing method of metal mask for dry etching, metal mask for dry etching, and deep etching method
JPH09167696A (en) * 1995-12-15 1997-06-24 Sony Corp Inductive coupling plasma processing device
US5667631A (en) * 1996-06-28 1997-09-16 Lam Research Corporation Dry etching of transparent electrodes in a low pressure plasma reactor
TW373268B (en) * 1997-02-21 1999-11-01 Applied Materials Inc Low temperature etch process utilizing power splitting between electrodes in AN RF plasma reactor

Also Published As

Publication number Publication date
CA2249094A1 (en) 1999-04-02
GB2329873B (en) 1999-11-10
FR2769376A1 (en) 1999-04-09
CN1213782A (en) 1999-04-14
JPH11167037A (en) 1999-06-22
GB2329873A (en) 1999-04-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20071002