GB9817261D0 - Capacitor and method for fabricating the same - Google Patents

Capacitor and method for fabricating the same

Info

Publication number
GB9817261D0
GB9817261D0 GBGB9817261.2A GB9817261A GB9817261D0 GB 9817261 D0 GB9817261 D0 GB 9817261D0 GB 9817261 A GB9817261 A GB 9817261A GB 9817261 D0 GB9817261 D0 GB 9817261D0
Authority
GB
United Kingdom
Prior art keywords
fabricating
capacitor
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9817261.2A
Other versions
GB2340303B (en
GB2340303A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to GB9817261A priority Critical patent/GB2340303B/en
Priority to NL1009940A priority patent/NL1009940C2/en
Publication of GB9817261D0 publication Critical patent/GB9817261D0/en
Publication of GB2340303A publication Critical patent/GB2340303A/en
Application granted granted Critical
Publication of GB2340303B publication Critical patent/GB2340303B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB9817261A 1998-08-07 1998-08-07 Capacitor and method for fabricating the same Expired - Fee Related GB2340303B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB9817261A GB2340303B (en) 1998-08-07 1998-08-07 Capacitor and method for fabricating the same
NL1009940A NL1009940C2 (en) 1998-08-07 1998-08-25 Capacitor and method for its manufacture.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9817261A GB2340303B (en) 1998-08-07 1998-08-07 Capacitor and method for fabricating the same
NL1009940A NL1009940C2 (en) 1998-08-07 1998-08-25 Capacitor and method for its manufacture.

Publications (3)

Publication Number Publication Date
GB9817261D0 true GB9817261D0 (en) 1998-10-07
GB2340303A GB2340303A (en) 2000-02-16
GB2340303B GB2340303B (en) 2000-12-27

Family

ID=26314183

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9817261A Expired - Fee Related GB2340303B (en) 1998-08-07 1998-08-07 Capacitor and method for fabricating the same

Country Status (2)

Country Link
GB (1) GB2340303B (en)
NL (1) NL1009940C2 (en)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089970A (en) * 1983-10-21 1985-05-20 Nec Kansai Ltd Semiconductor device
JP3021800B2 (en) * 1990-07-24 2000-03-15 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof
JPH04177760A (en) * 1990-11-09 1992-06-24 Matsushita Electric Ind Co Ltd Semiconductor storage device and its manufacture
US5142438A (en) * 1991-11-15 1992-08-25 Micron Technology, Inc. Dram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contact
US5391511A (en) * 1992-02-19 1995-02-21 Micron Technology, Inc. Semiconductor processing method of producing an isolated polysilicon lined cavity and a method of forming a capacitor
JP2897631B2 (en) * 1993-12-28 1999-05-31 日本電気株式会社 Semiconductor integrated circuit device and manufacturing method
US5501998A (en) * 1994-04-26 1996-03-26 Industrial Technology Research Institution Method for fabricating dynamic random access memory cells having vertical sidewall stacked storage capacitors
US5691219A (en) * 1994-09-17 1997-11-25 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor memory device
US5686337A (en) * 1996-01-11 1997-11-11 Vanguard International Semiconductor Corporation Method for fabricating stacked capacitors in a DRAM cell
KR100215867B1 (en) * 1996-04-12 1999-08-16 구본준 Capacitor of semiconductor device and its fabrication method

Also Published As

Publication number Publication date
NL1009940C2 (en) 2000-02-29
GB2340303B (en) 2000-12-27
GB2340303A (en) 2000-02-16

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060807