GB979409A - Manufacture of semi-conductors - Google Patents
Manufacture of semi-conductorsInfo
- Publication number
- GB979409A GB979409A GB1936/61A GB193661A GB979409A GB 979409 A GB979409 A GB 979409A GB 1936/61 A GB1936/61 A GB 1936/61A GB 193661 A GB193661 A GB 193661A GB 979409 A GB979409 A GB 979409A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- face
- bodies
- grooves
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C23F1/04—Chemical milling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H10P10/00—
-
- H10P54/00—
-
- H10P95/00—
-
- H10P95/50—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEI0017666 | 1960-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB979409A true GB979409A (en) | 1965-01-01 |
Family
ID=7186111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1936/61A Expired GB979409A (en) | 1960-02-09 | 1961-01-17 | Manufacture of semi-conductors |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3151007A (cg-RX-API-DMAC10.html) |
| GB (1) | GB979409A (cg-RX-API-DMAC10.html) |
| NL (1) | NL255454A (cg-RX-API-DMAC10.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3377215A (en) * | 1961-09-29 | 1968-04-09 | Texas Instruments Inc | Diode array |
| US3363151A (en) * | 1964-07-09 | 1968-01-09 | Transitron Electronic Corp | Means for forming planar junctions and devices |
| US3538571A (en) * | 1969-04-04 | 1970-11-10 | Mallory & Co Inc P R | Apparatus for producing ceramic chip electrical components |
| US4023260A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US4023258A (en) * | 1976-03-05 | 1977-05-17 | Bell Telephone Laboratories, Incorporated | Method of manufacturing semiconductor diodes for use in millimeter-wave circuits |
| US5064476A (en) * | 1990-09-17 | 1991-11-12 | Recine Sr Leonard J | Thermoelectric cooler and fabrication method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2582685A (en) * | 1947-04-15 | 1952-01-15 | Hermoplast Ltd | Method of producing electrical components |
| CH307776A (de) * | 1952-01-08 | 1955-06-15 | Ericsson Telefon Ab L M | Kontaktvorrichtung an einem Halbleiterelement. |
| NL190034A (cg-RX-API-DMAC10.html) * | 1953-08-17 | |||
| US2930950A (en) * | 1956-12-10 | 1960-03-29 | Teszner Stanislas | High power field-effect transistor |
-
0
- NL NL255454D patent/NL255454A/xx unknown
-
1961
- 1961-01-17 GB GB1936/61A patent/GB979409A/en not_active Expired
- 1961-01-27 US US85225A patent/US3151007A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3151007A (en) | 1964-09-29 |
| NL255454A (cg-RX-API-DMAC10.html) |
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