GB9714782D0 - High performance mosfet - Google Patents
High performance mosfetInfo
- Publication number
- GB9714782D0 GB9714782D0 GBGB9714782.1A GB9714782A GB9714782D0 GB 9714782 D0 GB9714782 D0 GB 9714782D0 GB 9714782 A GB9714782 A GB 9714782A GB 9714782 D0 GB9714782 D0 GB 9714782D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- high performance
- performance mosfet
- mosfet
- performance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66606—Lateral single gate silicon transistors with final source and drain contacts formation strictly before final or dummy gate formation, e.g. contact first technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9714782A GB2327296B (en) | 1997-07-14 | 1997-07-14 | Method of making a FET |
DE19733559A DE19733559A1 (en) | 1997-07-14 | 1997-08-02 | MOSFET production |
FR9710081A FR2767222B1 (en) | 1997-07-14 | 1997-08-06 | METHOD FOR MANUFACTURING A HIGH PERFORMANCE MOS FIELD-EFFECT TRANSISTOR |
NL1006802A NL1006802C2 (en) | 1997-07-14 | 1997-08-20 | High performance mosfet. |
JP22514897A JP2990118B2 (en) | 1997-07-14 | 1997-08-21 | High-performance mos field effect transistor |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9714782A GB2327296B (en) | 1997-07-14 | 1997-07-14 | Method of making a FET |
DE19733559A DE19733559A1 (en) | 1997-07-14 | 1997-08-02 | MOSFET production |
FR9710081A FR2767222B1 (en) | 1997-07-14 | 1997-08-06 | METHOD FOR MANUFACTURING A HIGH PERFORMANCE MOS FIELD-EFFECT TRANSISTOR |
NL1006802A NL1006802C2 (en) | 1997-07-14 | 1997-08-20 | High performance mosfet. |
JP22514897A JP2990118B2 (en) | 1997-07-14 | 1997-08-21 | High-performance mos field effect transistor |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9714782D0 true GB9714782D0 (en) | 1997-09-17 |
GB2327296A GB2327296A (en) | 1999-01-20 |
GB2327296B GB2327296B (en) | 1999-06-16 |
Family
ID=27512591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9714782A Expired - Fee Related GB2327296B (en) | 1997-07-14 | 1997-07-14 | Method of making a FET |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2990118B2 (en) |
DE (1) | DE19733559A1 (en) |
FR (1) | FR2767222B1 (en) |
GB (1) | GB2327296B (en) |
NL (1) | NL1006802C2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000332242A (en) | 1999-05-21 | 2000-11-30 | Mitsubishi Electric Corp | Semiconductor device and manufacture thereof |
DE10052208C2 (en) * | 2000-10-20 | 2002-11-28 | Advanced Micro Devices Inc | Method for producing a field effect transistor using an adjustment technology based on side wall spacing elements |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB8527062D0 (en) * | 1985-11-02 | 1985-12-04 | Plessey Co Plc | Mos transistor manufacture |
JPH0793316B2 (en) * | 1992-12-28 | 1995-10-09 | 日本電気株式会社 | Method for manufacturing semiconductor device |
US5472897A (en) * | 1995-01-10 | 1995-12-05 | United Microelectronics Corp. | Method for fabricating MOS device with reduced anti-punchthrough region |
US5545579A (en) * | 1995-04-04 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of fabricating a sub-quarter micrometer channel field effect transistor having elevated source/drain areas and lightly doped drains |
-
1997
- 1997-07-14 GB GB9714782A patent/GB2327296B/en not_active Expired - Fee Related
- 1997-08-02 DE DE19733559A patent/DE19733559A1/en not_active Ceased
- 1997-08-06 FR FR9710081A patent/FR2767222B1/en not_active Expired - Fee Related
- 1997-08-20 NL NL1006802A patent/NL1006802C2/en not_active IP Right Cessation
- 1997-08-21 JP JP22514897A patent/JP2990118B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2767222B1 (en) | 1999-09-17 |
GB2327296A (en) | 1999-01-20 |
JP2990118B2 (en) | 1999-12-13 |
DE19733559A1 (en) | 1999-02-18 |
FR2767222A1 (en) | 1999-02-12 |
GB2327296B (en) | 1999-06-16 |
JPH1174503A (en) | 1999-03-16 |
NL1006802C2 (en) | 1999-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20080714 |