GB966594A - Improvements in or relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in or relating to methods of manufacturing semiconductor devices

Info

Publication number
GB966594A
GB966594A GB41243/61A GB4124361A GB966594A GB 966594 A GB966594 A GB 966594A GB 41243/61 A GB41243/61 A GB 41243/61A GB 4124361 A GB4124361 A GB 4124361A GB 966594 A GB966594 A GB 966594A
Authority
GB
United Kingdom
Prior art keywords
relating
methods
semiconductor devices
manufacturing semiconductor
antimony
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB41243/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB966594A publication Critical patent/GB966594A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C11/00Alloys based on lead
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Conductive Materials (AREA)
GB41243/61A 1960-11-21 1961-11-17 Improvements in or relating to methods of manufacturing semiconductor devices Expired GB966594A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL258203 1960-11-21

Publications (1)

Publication Number Publication Date
GB966594A true GB966594A (en) 1964-08-12

Family

ID=19752711

Family Applications (1)

Application Number Title Priority Date Filing Date
GB41243/61A Expired GB966594A (en) 1960-11-21 1961-11-17 Improvements in or relating to methods of manufacturing semiconductor devices

Country Status (5)

Country Link
US (1) US3152373A (US06265458-20010724-C00056.png)
CH (1) CH413112A (US06265458-20010724-C00056.png)
DE (1) DE1176759B (US06265458-20010724-C00056.png)
GB (1) GB966594A (US06265458-20010724-C00056.png)
NL (1) NL258203A (US06265458-20010724-C00056.png)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3279006A (en) * 1963-12-30 1966-10-18 Martin Metals Company Method of preparing composite castings
US3436280A (en) * 1965-06-30 1969-04-01 Fujitsu Ltd Method of producing a variable capacitance diode
DE1279646B (de) * 1965-09-29 1968-10-10 Siemens Ag Verfahren zur Herstellung kristalliner Staebe aus halbleitenden Verbindungen
US3678986A (en) * 1970-04-27 1972-07-25 Siemens Ag Method for manufacturing homogeneous bodies from semiconductor alloys

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91163C (US06265458-20010724-C00056.png) * 1952-09-16
GB794128A (en) * 1955-08-04 1958-04-30 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
US2842831A (en) * 1956-08-30 1958-07-15 Bell Telephone Labor Inc Manufacture of semiconductor devices
AT212880B (de) * 1958-02-22 1961-01-10 Philips Nv Verfahren und Legierform zum Aufschmelzen eines Kontaktes auf einen halbleitenden Körper
BE575988A (US06265458-20010724-C00056.png) * 1958-02-22

Also Published As

Publication number Publication date
DE1176759B (de) 1964-08-27
US3152373A (en) 1964-10-13
CH413112A (de) 1966-05-15
NL258203A (US06265458-20010724-C00056.png)

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