GB953055A - Improvements in or relating to inductive semi-conductors - Google Patents

Improvements in or relating to inductive semi-conductors

Info

Publication number
GB953055A
GB953055A GB1036160A GB1036160A GB953055A GB 953055 A GB953055 A GB 953055A GB 1036160 A GB1036160 A GB 1036160A GB 1036160 A GB1036160 A GB 1036160A GB 953055 A GB953055 A GB 953055A
Authority
GB
United Kingdom
Prior art keywords
region
zone
contacts
semi
hooked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1036160A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB953055A publication Critical patent/GB953055A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

953,055. Semi-conductor devices. Y. WATANABE, and J. NISHIZAWA. March 23, 1960 [March 25, 1959], No. 10361/60. Heading H1K. A device with an inductance of at least a millihenry comprises a number of semi-conductor regions. One of these has a higher resistivity than the rest and is disposed between a second region for injecting carriers into it and a third region with a hooked potential distribution characteristic to which the injector carriers flow. The current flow time lag due to the length of the first region and other parameters of the device produces the required inductance. In a typical diode device of NPIP type (Fig. 1) the hooked potential occurs in the P zone 5. In alternative arrangements the P region 7 is replaced by a P region or point contact on the side of zone 6, and an ohmic contact made to the end of the intrinsic zone. In any of these arrangements an N-type region may be provided between P region 7 and its contact 3 in which case ohmic contacts may also be provided on the two P regions. A further arrangement, Fig. 7, consists of an intrinsic region with NP zone configurations at both ends and on one side. In this case all the N zones are provided with contacts. Two of the P zones may also be provided with contacts.
GB1036160A 1959-03-25 1960-03-23 Improvements in or relating to inductive semi-conductors Expired GB953055A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP967059 1959-03-25

Publications (1)

Publication Number Publication Date
GB953055A true GB953055A (en) 1964-03-25

Family

ID=32089034

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1036160A Expired GB953055A (en) 1959-03-25 1960-03-23 Improvements in or relating to inductive semi-conductors

Country Status (2)

Country Link
GB (1) GB953055A (en)
NL (2) NL123107C (en)

Also Published As

Publication number Publication date
NL123107C (en)
NL249821A (en)

Similar Documents

Publication Publication Date Title
GB921264A (en) Improvements in and relating to semiconductor devices
JPS5539619A (en) Thyristor
US2761020A (en) Frequency selective semiconductor circuit elements
GB923104A (en) Improvements in or relating to semiconductive devices
GB1012124A (en) Improvements in or relating to semiconductor devices
GB1229045A (en)
GB1438232A (en) Semiconductor protective elements
GB1211959A (en) Power transistors
US2895058A (en) Semiconductor devices and systems
GB1000058A (en) Improvements in or relating to semiconductor devices
ES364658A1 (en) High speed switching rectifier
US2922898A (en) Electronic counter
GB1471617A (en) Circuits comprising a semiconductor device
GB953055A (en) Improvements in or relating to inductive semi-conductors
GB1012049A (en) Semiconductive devices
GB831535A (en) Improvements in semi conductor switching devices and circuits therefor
ES8505144A1 (en) Radiation-sensitive semiconductor device having reduced capacitance
GB1296225A (en)
US3019352A (en) Tetrode transistor circuit
GB1031052A (en) Silicon semi-conductor diode devices
GB1287247A (en) Improved semiconductor device with high junction breakdown voltage and method of manufacture
GB1206920A (en) Semiconductor arrangement
US2776381A (en) Multielectrode semiconductor circuit element
US3393376A (en) Punch-through microwave oscillator
GB969614A (en) Improvements in or relating to semiconductor devices