GB945933A - Polishing gallium arsenide crystals - Google Patents

Polishing gallium arsenide crystals

Info

Publication number
GB945933A
GB945933A GB43788/62A GB4378862A GB945933A GB 945933 A GB945933 A GB 945933A GB 43788/62 A GB43788/62 A GB 43788/62A GB 4378862 A GB4378862 A GB 4378862A GB 945933 A GB945933 A GB 945933A
Authority
GB
United Kingdom
Prior art keywords
plate
pile
crystals
gallium arsenide
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB43788/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB945933A publication Critical patent/GB945933A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

945,933. Etching. WESTERN ELECTRIC CO. Inc. Nov. 20, 1962 [Dec. 29, 1961], No. 43788/62. Heading B6J. Crystals of gallium arsenide are etched by a solution of bromine and methyl alcohol, the former having a maximum concentration of 0.05% by volume and the solution being stirred parallel to the surface being etched. The crystal may be previously lapped using fine alumina. A glass plate 15 covered with a pile paper or fabric 26 is rotated about a vertical axis in the etchant bath. Crystals are mounted on the undersurface of a holder plate 18 rotatably mounted eccentrically of the plate 15, the surface of the crystal being in contact with or slightly spaced from the pile. The pile effects the stirring. The holder 18 is rotated by either an independent source or rotation of the plate 15. Etching is enhanced by irradiation by a tungsten filament lamp 29.
GB43788/62A 1961-12-29 1962-11-20 Polishing gallium arsenide crystals Expired GB945933A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US163126A US3156596A (en) 1961-12-29 1961-12-29 Method for polishing gallium arsenide

Publications (1)

Publication Number Publication Date
GB945933A true GB945933A (en) 1964-01-08

Family

ID=22588597

Family Applications (1)

Application Number Title Priority Date Filing Date
GB43788/62A Expired GB945933A (en) 1961-12-29 1962-11-20 Polishing gallium arsenide crystals

Country Status (3)

Country Link
US (1) US3156596A (en)
FR (1) FR1339898A (en)
GB (1) GB945933A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988497A (en) * 1973-10-25 1976-10-26 Hamamatsu Terebi Kabushiki Kaisha Photocathode made of a semiconductor single crystal
US4869779A (en) * 1987-07-27 1989-09-26 Acheson Robert E Hydroplane polishing device and method

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
DE1216651B (en) * 1963-03-28 1966-05-12 Siemens Ag Process for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers
DE1287409B (en) * 1966-04-21 1969-01-16 Telefunken Patent Method and device for producing flat surfaces on semiconductor wafers using a pickling liquid
US3629023A (en) * 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
FR2168936B1 (en) * 1972-01-27 1977-04-01 Labo Electronique Physique
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4323422A (en) * 1980-04-24 1982-04-06 Calawa Arthur R Method for preparing optically flat damage-free surfaces
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
EP4304808A4 (en) * 2021-03-11 2024-07-17 Univ Michigan State Polishing apparatus for smoothing diamonds

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2539455A (en) * 1944-01-27 1951-01-30 Mazia Joseph Electrolytic polishing of metals
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US3024148A (en) * 1957-08-30 1962-03-06 Minneapols Honeywell Regulator Methods of chemically polishing germanium

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3988497A (en) * 1973-10-25 1976-10-26 Hamamatsu Terebi Kabushiki Kaisha Photocathode made of a semiconductor single crystal
US4869779A (en) * 1987-07-27 1989-09-26 Acheson Robert E Hydroplane polishing device and method

Also Published As

Publication number Publication date
US3156596A (en) 1964-11-10
FR1339898A (en) 1963-10-11

Similar Documents

Publication Publication Date Title
GB945933A (en) Polishing gallium arsenide crystals
ES482960A1 (en) Device fabrication by plasma etching
GB1288018A (en)
GB805291A (en) Improvements in methods of electrolytically etching or plating bodies of semiconductive material
GB1353725A (en) Polishing of gallium phosphide
GB1246026A (en) Method of manufacturing a semiconductor device
JPS5252549A (en) Antenna unit
GB1245172A (en) Apparatus for aerating still and running liquid
GB1153535A (en) Bath and Process for Electrolytically Etching Indium Arsenide
GB664459A (en) Improvements in devices for use in forming foam
JPS52124891A (en) Crystal watch
GB1013120A (en) Improvements in thermionic converter and method of manufacture
JPS5334498A (en) Liquid crystal display unit
JPS5289091A (en) Crystal vibrator
GB1325973A (en) Can opener
ES404336A1 (en) Thin film capacitor including an aluminum underlay
GB578952A (en) Improvements in wireless receiving apparatus
GB1182319A (en) Etching of Gold
GB1370294A (en) Bidirectional thyristors
CA443603A (en) Crushing plate and holder combination
AU141044B2 (en) Improvements in writing instruments and reservoirs therefor
JPS5342654A (en) Semiconductor device
GB622378A (en) Improvements in or relating to glass envelopes, for example, for electric discharge devices
AU138183B2 (en) Improvements in or relating to electric discharge devices employing pool-type cathode
JPS52120790A (en) Liquid crystal display unit and its manufacture