FR1339898A - Process for polishing gallium arsenide - Google Patents

Process for polishing gallium arsenide

Info

Publication number
FR1339898A
FR1339898A FR916188A FR916188A FR1339898A FR 1339898 A FR1339898 A FR 1339898A FR 916188 A FR916188 A FR 916188A FR 916188 A FR916188 A FR 916188A FR 1339898 A FR1339898 A FR 1339898A
Authority
FR
France
Prior art keywords
gallium arsenide
polishing gallium
polishing
arsenide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR916188A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1339898A publication Critical patent/FR1339898A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
FR916188A 1961-12-29 1962-11-21 Process for polishing gallium arsenide Expired FR1339898A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US163126A US3156596A (en) 1961-12-29 1961-12-29 Method for polishing gallium arsenide

Publications (1)

Publication Number Publication Date
FR1339898A true FR1339898A (en) 1963-10-11

Family

ID=22588597

Family Applications (1)

Application Number Title Priority Date Filing Date
FR916188A Expired FR1339898A (en) 1961-12-29 1962-11-21 Process for polishing gallium arsenide

Country Status (3)

Country Link
US (1) US3156596A (en)
FR (1) FR1339898A (en)
GB (1) GB945933A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3262825A (en) * 1961-12-29 1966-07-26 Bell Telephone Labor Inc Method for etching crystals of group iii(a)-v(a) compounds and etchant used therefor
DE1216651B (en) * 1963-03-28 1966-05-12 Siemens Ag Process for the polishing removal of monocrystalline semiconductor bodies, in particular semiconductor wafers
DE1287409B (en) * 1966-04-21 1969-01-16 Telefunken Patent Method and device for producing flat surfaces on semiconductor wafers using a pickling liquid
US3629023A (en) * 1968-07-17 1971-12-21 Minnesota Mining & Mfg METHOD OF CHEMICALLY POLISHING CRYSTALS OF II(b){14 VI(a) SYSTEM
FR2168936B1 (en) * 1972-01-27 1977-04-01 Labo Electronique Physique
JPS5071261A (en) * 1973-10-25 1975-06-13
US4184908A (en) * 1978-10-05 1980-01-22 The United States Of America As Represented By The Secretary Of The Navy Method for polishing cadmium sulfide semiconductors
US4323422A (en) * 1980-04-24 1982-04-06 Calawa Arthur R Method for preparing optically flat damage-free surfaces
US4380490A (en) * 1981-03-27 1983-04-19 Bell Telephone Laboratories, Incorporated Method of preparing semiconductor surfaces
US4869779A (en) * 1987-07-27 1989-09-26 Acheson Robert E Hydroplane polishing device and method
WO2022192344A1 (en) * 2021-03-11 2022-09-15 Board Of Trustees Of Michigan State University Polishing apparatus for smoothing diamonds

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2539455A (en) * 1944-01-27 1951-01-30 Mazia Joseph Electrolytic polishing of metals
US2841477A (en) * 1957-03-04 1958-07-01 Pacific Semiconductors Inc Photochemically activated gaseous etching method
US3024148A (en) * 1957-08-30 1962-03-06 Minneapols Honeywell Regulator Methods of chemically polishing germanium

Also Published As

Publication number Publication date
GB945933A (en) 1964-01-08
US3156596A (en) 1964-11-10

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