GB941760A - Improvements in power transistors - Google Patents
Improvements in power transistorsInfo
- Publication number
- GB941760A GB941760A GB1199962A GB1199962A GB941760A GB 941760 A GB941760 A GB 941760A GB 1199962 A GB1199962 A GB 1199962A GB 1199962 A GB1199962 A GB 1199962A GB 941760 A GB941760 A GB 941760A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bonded
- plate
- silicon
- electrode
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 210000001520 comb Anatomy 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 229910001080 W alloy Inorganic materials 0.000 abstract 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Die Bonding (AREA)
Abstract
941,760. Transistors. PACIFIC SEMICONDUCTORS Inc. March 29, 1962 [May 5, 1961], No. 11999/62. Heading H1K. In a high power transistor the emitter and base electrodes, situated on the same face of a semi-conductor wafer, are each formed of at least two comb-shaped parts, each set of teeth on one electrode being interdigitated with a corresponding set of teeth on the other. The spines of the combs are parallel and the parts of each electrode interconnected by U-shaped metal contact members the limbs of which are bonded to the spines of the combs. In the silicon transistor shown in Figs. 2 and 4, in which the emitter and base electrodes are designated 13, 14; 11, 12, respectively, the collector electrode on the opposite face of silicon wafer 10 is ohmically bonded to a hollow internally-threaded mounting stud 32 brazed into an aperture in base plate 33. Materials of high heat conductivity such as copper, steel or metallized ceramic are used for the stud and plate. The interconnecting U- shaped members 21a, 21b are made of a material with a thermal expansion coefficient matching that of silicon, e.g. certain iron-nickel-cobalt and molybdenum-tungsten alloys. Braided flexible conductors 47a, 47b bonded to the U-shaped members extend to the inner ends of contact pins 43, 44, insulatedly sealed through the base plate. A cap is hermetically sealed to the rim of this plate to complete the assembly. Specification 920,306 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10805461A | 1961-05-05 | 1961-05-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB941760A true GB941760A (en) | 1963-11-13 |
Family
ID=22320020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1199962A Expired GB941760A (en) | 1961-05-05 | 1962-03-29 | Improvements in power transistors |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB941760A (en) |
| NL (1) | NL276750A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3515952A (en) * | 1965-02-17 | 1970-06-02 | Motorola Inc | Mounting structure for high power transistors |
-
0
- NL NL276750D patent/NL276750A/xx unknown
-
1962
- 1962-03-29 GB GB1199962A patent/GB941760A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3515952A (en) * | 1965-02-17 | 1970-06-02 | Motorola Inc | Mounting structure for high power transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| NL276750A (en) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1484608A (en) | Semiconductor device | |
| GB822770A (en) | Improvements in semiconductor device construction | |
| GB987887A (en) | Improvements in or relating to solar cell assemblies | |
| GB902176A (en) | Thermoelectric cooling device | |
| GB1529145A (en) | Package for light-triggered semiconductor device | |
| GB824255A (en) | Improvements in or relating to transistors | |
| GB862453A (en) | Improvements in or relating to semi-conductor devices | |
| GB807582A (en) | High power junction transistor | |
| GB768103A (en) | Improvements in or relating to semiconductor devices | |
| GB1264055A (en) | Semiconductor device | |
| IT1029419B (en) | PROCEDURE FOR FIXING A CONDUCTOR ELEMENT TO A SEMICONDUCTING DEVICE AND PRODUCT OBTAINED | |
| GB941760A (en) | Improvements in power transistors | |
| GB919947A (en) | Semiconductor device | |
| US2595052A (en) | Crystal amplifier | |
| GB1139345A (en) | Semi-conductor devices | |
| GB975827A (en) | A semi-conductor arrangement | |
| GB971703A (en) | A semiconductor device | |
| GB884557A (en) | Improvements in or relating to semi-conductive devices | |
| GB972368A (en) | Improved thermoelectric device and method of forming same | |
| GB1230266A (en) | ||
| GB1177031A (en) | Pressure Assembled Semiconductor Device using Massive Flexibly Mounted Terminals | |
| GB930352A (en) | Improvements in or relating to semi-conductor arrangements | |
| GB1210584A (en) | Semiconductor device and method of manufacturing the same | |
| GB942232A (en) | Improvements in semi-conductor devices | |
| GB903919A (en) | Semiconductor devices |