GB933296A - Improvements in or relating to the manufacture of devices containing thin layers - Google Patents
Improvements in or relating to the manufacture of devices containing thin layersInfo
- Publication number
- GB933296A GB933296A GB24301/61A GB2430161A GB933296A GB 933296 A GB933296 A GB 933296A GB 24301/61 A GB24301/61 A GB 24301/61A GB 2430161 A GB2430161 A GB 2430161A GB 933296 A GB933296 A GB 933296A
- Authority
- GB
- United Kingdom
- Prior art keywords
- lead
- magnetic
- strips
- conductive
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 5
- 239000010949 copper Substances 0.000 abstract 5
- 229910052802 copper Inorganic materials 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 4
- 239000011521 glass Substances 0.000 abstract 4
- 239000004020 conductor Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 2
- 239000000696 magnetic material Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000007747 plating Methods 0.000 abstract 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- 229910000881 Cu alloy Inorganic materials 0.000 abstract 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 abstract 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical group [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 abstract 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 abstract 1
- 229910001004 magnetic alloy Inorganic materials 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/002—Inhomogeneous material in general
- H01B3/004—Inhomogeneous material in general with conductive additives or conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0128—Manufacture or treatment of composite superconductor filaments
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES69238A DE1223222B (de) | 1960-07-05 | 1960-07-05 | Verfahren zur elektrolytischen Abscheidung duenner Schichten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB933296A true GB933296A (en) | 1963-08-08 |
Family
ID=7500844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB24301/61A Expired GB933296A (en) | 1960-07-05 | 1961-07-05 | Improvements in or relating to the manufacture of devices containing thin layers |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE605785A (enrdf_load_stackoverflow) |
| CH (1) | CH390653A (enrdf_load_stackoverflow) |
| DE (1) | DE1223222B (enrdf_load_stackoverflow) |
| GB (1) | GB933296A (enrdf_load_stackoverflow) |
| NL (1) | NL266616A (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE837633C (de) * | 1950-10-07 | 1952-04-28 | Richard Blasberg | Verfahren zum Leitendmachen nichtmetallischer Oberflaechen, insbesondere von Kunststoffen |
| GB847927A (en) * | 1955-10-11 | 1960-09-14 | Philco Corp | A method and apparatus for the electrolytic treatment of semiconductive bodies |
-
0
- NL NL266616D patent/NL266616A/xx unknown
-
1960
- 1960-07-05 DE DES69238A patent/DE1223222B/de active Pending
-
1961
- 1961-06-19 CH CH715261A patent/CH390653A/de unknown
- 1961-07-05 BE BE605785A patent/BE605785A/fr unknown
- 1961-07-05 GB GB24301/61A patent/GB933296A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL266616A (enrdf_load_stackoverflow) | |
| DE1223222B (de) | 1966-08-18 |
| BE605785A (fr) | 1961-11-03 |
| CH390653A (de) | 1965-04-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3506545A (en) | Method for plating conductive patterns with high resolution | |
| US3641402A (en) | Semiconductor device with beta tantalum-gold composite conductor metallurgy | |
| GB1101106A (en) | Amorphous alloys | |
| USRE29812E (en) | Photovoltaic cell | |
| US3013955A (en) | Method of transistor manufacture | |
| US3689780A (en) | Control of flow across a weak link in superconductive and superfluid devices | |
| US5219828A (en) | Method for fabricating oxide superconducting coatings | |
| US3753665A (en) | Magnetic film plated wire | |
| Harvey | Gallium arsenide electrode behavior | |
| US4173497A (en) | Amorphous lead dioxide photovoltaic generator | |
| US4360702A (en) | Copper oxide/N-silicon heterojunction photovoltaic device | |
| GB933296A (en) | Improvements in or relating to the manufacture of devices containing thin layers | |
| US3359466A (en) | Method of improving the electrical characteristics of thin film metalinsulator-metalstructures | |
| US3597822A (en) | Method of making filamentary metal structures | |
| US3540988A (en) | Coating method | |
| US3642602A (en) | Electroplating apparatus | |
| US3391024A (en) | Process for preparing improved cryogenic circuits | |
| US3682604A (en) | Memory element and method of making protective coating therefor | |
| Katz et al. | Low-resistivity, YBa/sub 2/Cu/sub 3/O/sub 7/-to-silver electrical contacts by plasma spraying | |
| US3312924A (en) | Solid state switching device | |
| US2161600A (en) | Electrode system for rectifying or controlling high or intermediate frequency oscillations | |
| GB1266448A (enrdf_load_stackoverflow) | ||
| US3272669A (en) | Method of simultaneously fabricating a plurality of semiconductor p-nu junction devices | |
| GB1312497A (en) | Superconductor elements | |
| US3242389A (en) | Nonlinear tunnel resistor and method of manufacture |