GB932896A - Crystallization from a molten drop - Google Patents
Crystallization from a molten dropInfo
- Publication number
- GB932896A GB932896A GB4207561A GB4207561A GB932896A GB 932896 A GB932896 A GB 932896A GB 4207561 A GB4207561 A GB 4207561A GB 4207561 A GB4207561 A GB 4207561A GB 932896 A GB932896 A GB 932896A
- Authority
- GB
- United Kingdom
- Prior art keywords
- inert gas
- drop
- hydrogen
- arc
- fed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
- C30B11/10—Solid or liquid components, e.g. Verneuil method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
In the growth of a crystal on to a carrier, wherein solid is fed into a drop heated by an electric arc and surrounded by an inert gas, the inert gas contains 0,5-50%, preferably 1-10%, of hydrogen. The hydrogen is preferably introduced around the arc together with inert gas. The solid may be fed to the drop as a wire, or as a continuous or discontinuous suspension of powder in inert gas which may contain hydrogen. A purging stream of inert gas, which may contain hydrogen, may be employed. The inert gas may be argon. The crystal may be of silicon, tungsten or titanium diboride; and may be rotated during growth. A seed may be used to produce a single crystal. The arc may be passed between the drop and a thoriated electrode, and may be produced by <PICT:0932896/III/1> direct current in either direction or by alternating current. As shown in Fig. 1, an annular stream 15 of inert gas containing hydrogen passes over an electrode 10 and an arc 15a to a drop 18 replenished by material from a wire 23. In a modification (Fig. 2, not shown), the drop is replenished by material fed discontinuously as a powder into an annular stream of inert gas around the annular stream of inert gas containing hydrogen; and inert purging gas is passed through the apparatus.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US7621860A | 1960-12-16 | 1960-12-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB932896A true GB932896A (en) | 1963-07-31 |
Family
ID=22130653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4207561A Expired GB932896A (en) | 1960-12-16 | 1961-11-24 | Crystallization from a molten drop |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1161854B (en) |
| GB (1) | GB932896A (en) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2965456A (en) * | 1956-12-31 | 1960-12-20 | Union Carbide Corp | Process for crystalline growth employing collimated electrical energy |
-
1961
- 1961-11-24 GB GB4207561A patent/GB932896A/en not_active Expired
- 1961-12-15 DE DEU8538A patent/DE1161854B/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1161854B (en) | 1964-01-30 |
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